发布求助
文献互助 智能选刊 最新文献

2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)最新文献

筛选
英文 中文
PMOS SiGe epitaxial growth process improvement to increase Yield and Throughput 改进PMOS SiGe外延生长工艺，提高产率和产量
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2020-08-01 DOI: 10.1109/ASMC49169.2020.9185259
V. Kaushal, R. Mahadevapuram, G. Yue, A. Raviswaran
{"title":"PMOS SiGe epitaxial growth process improvement to increase Yield and Throughput","authors":"V. Kaushal, R. Mahadevapuram, G. Yue, A. Raviswaran","doi":"10.1109/ASMC49169.2020.9185259","DOIUrl":"https://doi.org/10.1109/ASMC49169.2020.9185259","url":null,"abstract":"In this paper, we present the development of a new 14nm SiGe process that is designed to improve with-in-wafer uniformity to eventually improve Electrical parameters, parametric limited yield and overall average yield. In addition we showed that throughput has also improved. The methods presented involved adding cross-flows of same process gases and optimizing the flows, temperature, power and time. By doing so, significant improvement in the WIW uniformity (growth and dopant concentration) and improvement in Defects were observed. This WIW uniformity led to significant improvements in various Electrical Test parameters as well as yield.","PeriodicalId":6771,"journal":{"name":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"68 3 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91102411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Laser-based Hair Crack Detection on Wafers 基于激光的晶圆毛裂纹检测
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2020-08-01 DOI: 10.1109/ASMC49169.2020.9185278
Alexander Fuchs, R. Priewald, F. Pernkopf
{"title":"Laser-based Hair Crack Detection on Wafers","authors":"Alexander Fuchs, R. Priewald, F. Pernkopf","doi":"10.1109/ASMC49169.2020.9185278","DOIUrl":"https://doi.org/10.1109/ASMC49169.2020.9185278","url":null,"abstract":"The detection of hair cracks is one of the key challenges to improve wafer-processing stability. Contrary to other defects on the wafer-edge, hair cracks have a very small geometric footprint, making them hard to detect for measurement systems. This raises the demand for a powerful data analysis tool, which can extract the relevant information even in low signal-to-noise ratio scenarios. In this paper, we investigate an approach for hair crack detection using a laser-based wafer edge inspection device and deep neural networks to analyze and classify the measured data. We propose different pre-processing methods for the raw measurement data, to improve the learning behavior of the networks. The results show that a substantial improvement, in both detection rate and false positive rate, can be achieved by appropriate pre-processing of the measured data.","PeriodicalId":6771,"journal":{"name":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"67 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87637771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electron Beam Inspection: Voltage Contrast Inspection to Characterize Contact Isolation 电子束检测:电压对比检测表征接触隔离
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2020-08-01 DOI: 10.1109/ASMC49169.2020.9185247
R. Hafer, A. Stamper, J. Hsieh
{"title":"Electron Beam Inspection: Voltage Contrast Inspection to Characterize Contact Isolation","authors":"R. Hafer, A. Stamper, J. Hsieh","doi":"10.1109/ASMC49169.2020.9185247","DOIUrl":"https://doi.org/10.1109/ASMC49169.2020.9185247","url":null,"abstract":"For a recent replacement metal gate (RMG) FINFET technology using a silicon-on-insulator (SOI) substrate, contact to gate electrical isolation is monitored with Electron Beam Inspection (EBI). The variation in isolation could be due to either lithography overlay error or critical dimensions. The inspection is performed in a Voltage contrast mode (VC). A within reticle inspection using EBI is proposed to characterize the within-reticle and within-wafer variation.","PeriodicalId":6771,"journal":{"name":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"110 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82889325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Oval-Shaped OP-Layer Hole Etching: Shape Deformation, Local Arcing, and Hole Bridging Improvements 椭圆形上层孔蚀刻:形状变形、局部圆弧和孔桥改进
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2020-08-01 DOI: 10.1109/ASMC49169.2020.9185191
Zusing Yang, Yao-Yuan Chang, Ming-Tsung Wu, Hong-Ji Lee, N. Lian, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu
{"title":"Oval-Shaped OP-Layer Hole Etching: Shape Deformation, Local Arcing, and Hole Bridging Improvements","authors":"Zusing Yang, Yao-Yuan Chang, Ming-Tsung Wu, Hong-Ji Lee, N. Lian, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu","doi":"10.1109/ASMC49169.2020.9185191","DOIUrl":"https://doi.org/10.1109/ASMC49169.2020.9185191","url":null,"abstract":"The challenges of oval-shaped silicon dioxide and polysilicon (OP)-layer hole etching, including shape deformation, local arcing, and adjacent hole bridging are reported. We explore the shape deformation evolution step by step and point out that wiggling of the organic mask is the most critical factor to enhance the occurrence of shape deformation. Further, the local arcing induced profile damage during hole-patterned etching could be eliminated by stacking specific capping materials on the top of OP layers. A DOE of the etch process demonstrates the ability to solve the adjacent hole bridging issue.","PeriodicalId":6771,"journal":{"name":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"23 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87540234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tilt angle and dose rate monitoring of low energy ion implantation processes with photomodulated reflectance measurement : AM: Advanced Metrology 低能量离子注入过程的倾斜角度和剂量率监测与光电调制反射测量:AM:先进计量学
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2020-08-01 DOI: 10.1109/ASMC49169.2020.9185326
A. Pongrácz, J. Szívós, F. Ujhelyi, Z. Zolnai, Ö. Sepsi, Á. Kun, G. Nadudvari, J. Byrnes, L. Rubin, Edward D. Moore
{"title":"Tilt angle and dose rate monitoring of low energy ion implantation processes with photomodulated reflectance measurement : AM: Advanced Metrology","authors":"A. Pongrácz, J. Szívós, F. Ujhelyi, Z. Zolnai, Ö. Sepsi, Á. Kun, G. Nadudvari, J. Byrnes, L. Rubin, Edward D. Moore","doi":"10.1109/ASMC49169.2020.9185326","DOIUrl":"https://doi.org/10.1109/ASMC49169.2020.9185326","url":null,"abstract":"Photo-modulated reflectance measurements provide a powerful, non-contact, non-destructive and inline-compatible method with low-cost operation for statistical process control of ion implantation steps on monitor and on product wafers. We present case studies describing how photo-modulated reflectivity measurements (PMR) can be used for ion implantation dose, fluence and tilt angle monitoring with excellent resolution, even for low-energy ion implantation processes. This is important because precise dopant and damage profile control is crucial in state-of-the art semiconductor processes utilizing shallow junctions and complex 3D doping profiles.","PeriodicalId":6771,"journal":{"name":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"33 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76926587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Characterization of Sub-micron Metal Line Arrays Using Picosecond Ultrasonics 用皮秒超声表征亚微米金属线阵列
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2020-08-01 DOI: 10.1109/ASMC49169.2020.9185245
M. Mehendale, M. Kotelyanskii, R. Mair, P. Mukundhan, J. Bogdanowicz, L. Teugels, A. Charley, P. Kuszewski
{"title":"Characterization of Sub-micron Metal Line Arrays Using Picosecond Ultrasonics","authors":"M. Mehendale, M. Kotelyanskii, R. Mair, P. Mukundhan, J. Bogdanowicz, L. Teugels, A. Charley, P. Kuszewski","doi":"10.1109/ASMC49169.2020.9185245","DOIUrl":"https://doi.org/10.1109/ASMC49169.2020.9185245","url":null,"abstract":"Characterization of patterned nanostructures in modern nanoelectronic memory and logic devices using traditional optical critical dimension (OCD) metrology technique faces challenges as the structures become optically opaque. In this paper, we present the picosecond ultrasonic (PU) based acoustic metrology technique as a viable option to characterize periodically patterned nanostructures. Specifically, we evaluate the sensitivity of PU to metal line arrays of various geometries and show that the frequency profile of generated acoustics is dependent on the sample geometry including the pitch and width of the metal lines exposed. We also demonstrate that the signal is sensitive to the presence of the lines embedded under a blanket layer of the same metal.","PeriodicalId":6771,"journal":{"name":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"56 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72944423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dimensional Control of Line Gratings by Small Angle X-Ray Scattering: Shape and Roughness Extraction x射线小角散射线光栅的尺寸控制:形状和粗糙度提取
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2020-08-01 DOI: 10.1109/ASMC49169.2020.9185351
J. Reche, Y. Blancquaert, G. Freychet, P. Gergaud, M. Besacier
{"title":"Dimensional Control of Line Gratings by Small Angle X-Ray Scattering: Shape and Roughness Extraction","authors":"J. Reche, Y. Blancquaert, G. Freychet, P. Gergaud, M. Besacier","doi":"10.1109/ASMC49169.2020.9185351","DOIUrl":"https://doi.org/10.1109/ASMC49169.2020.9185351","url":null,"abstract":"The capabilities of Small Angle X-ray Scattering (SAXS) for dimensional control of line gratings are reviewed. We first introduce different experimental methodologies used to extract the pitch, the critical dimension (CD) and the side-wall angle (SWA) of line gratings. A special focus is done on line roughness extraction. We already demonstrated that the SAXS technique has the sensitivity to measure line roughness amplitude below 1 nm on a set of line gratings designed with a controlled line roughness [1]. Fast Fourier Transforms (FFT) simulations revealed that the Line Width Roughness (LWR) defined as a Power Spectral Density (PSD) can be measured in a SAXS pattern at some specific positions in the reciprocal space [2]. In the present study, a comparison of the LWR PSD extracted by SAXS and by Scanning Electron Microscope (SEM) on one set of samples was done.","PeriodicalId":6771,"journal":{"name":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"44 1","pages":"1-6"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81587199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ultra large pitch and depth structures metrology using spectral reflectometry in combination with RCWA based model and TLM Algorithm : AM: Advanced Metrology 结合基于RCWA模型和TLM算法的光谱反射测量的超大间距和深度结构测量:AM: Advanced metrology
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2020-08-01 DOI: 10.1109/ASMC49169.2020.9185276
Annalisa Del Vito, I. Osherov, A. Urbanowicz, Y. Katz, Kobi Barkan, I. Turovets, R. Haupt
{"title":"Ultra large pitch and depth structures metrology using spectral reflectometry in combination with RCWA based model and TLM Algorithm : AM: Advanced Metrology","authors":"Annalisa Del Vito, I. Osherov, A. Urbanowicz, Y. Katz, Kobi Barkan, I. Turovets, R. Haupt","doi":"10.1109/ASMC49169.2020.9185276","DOIUrl":"https://doi.org/10.1109/ASMC49169.2020.9185276","url":null,"abstract":"The mainstream of dimensional metrology development is focused towards continuous shrinking of the devices (Moore scaling). Current cutting-edge technologies are in few nanometer range (3-7nm). There is also a growing demand to characterize structures with large dimensions in microns range (pitch, CD or depth). New technology megatrends such as internet of things (IOT) additionally require More than Moore scaling and heterogeneous integration [1–3]. Due to recent developments ultra large pitch scatterometry applications growth is observed in high power, sensors and packaging areas. Here we present novel approach that is focused on ultra large pitch scatterometry and its challenges. We demonstrate how to extend usage of conventional scatterometry for micro size devices.","PeriodicalId":6771,"journal":{"name":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89789284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Effect of In-situ Capping on Phase Change Memory Device Performance : AEPM: Advance Equipment Processes and Materials 原位封盖对相变存储器件性能的影响:AEPM:先进设备工艺和材料
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2020-08-01 DOI: 10.1109/ASMC49169.2020.9185322
Kevin Brew, R. Conti, I. Saraf, Cheng-Wei Cheng, Cheng-Wei Cheng, William Lee, Yin Xu, N. Saulnier, T. Masuda, T. Jimbo
{"title":"Effect of In-situ Capping on Phase Change Memory Device Performance : AEPM: Advance Equipment Processes and Materials","authors":"Kevin Brew, R. Conti, I. Saraf, Cheng-Wei Cheng, Cheng-Wei Cheng, William Lee, Yin Xu, N. Saulnier, T. Masuda, T. Jimbo","doi":"10.1109/ASMC49169.2020.9185322","DOIUrl":"https://doi.org/10.1109/ASMC49169.2020.9185322","url":null,"abstract":"Oxidation of phase-change memory (PCM) materials (e.g. $Ge_{2}Sb_{2}Te_{5}$, GST) has been shown to decrease crystallization temperature and impact film composition, thus impacting analog switching behavior [1], [2]. PCM mushroom-cell devices were engineered on a 14 nm backend test vehicle to compare the electrical switching performance of in-situ and ex-situ capped GST 225. To mitigate the electrical effects from varying top electrode processes between tools, in-situ devices were fabricated with a Ti-TiN cap on GST before exposure to air. The in-situ cap is reduced to a minimal thickness to prevent oxidation of the Ti adhesion layer and the remainder of TiN was deposited matching to the ex-situ top electrode process. TEM of in-situ capped samples were found to have less GST undercut from patterning and have less reduction of the contact area between the GST and top electrode. SET and RESET programming of in-situ capped PCM devices show comparable SET and RESET state resistances to ex-situ processed PCM devices. Current-voltage measurements show that the in-situ PCM can have slightly lower voltage threshold switching but achieves a significantly higher current after threshold switching. The increased current for in-situ capped PCM results in higher power consumption with fixed voltage programming.","PeriodicalId":6771,"journal":{"name":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"10 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84361233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Output Improvement in High Volume Memory Fabs by Reducing Recipe Qualifications 通过减少配方资格来提高大容量内存晶圆厂的产量
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Pub Date : 2020-08-01 DOI: 10.1109/ASMC49169.2020.9185365
C. Keith, Ace Chen, Haim Albalak, Maryam Anvar
{"title":"Output Improvement in High Volume Memory Fabs by Reducing Recipe Qualifications","authors":"C. Keith, Ace Chen, Haim Albalak, Maryam Anvar","doi":"10.1109/ASMC49169.2020.9185365","DOIUrl":"https://doi.org/10.1109/ASMC49169.2020.9185365","url":null,"abstract":"This paper presents a model to optimize the number of recipes qualified on each tool or chamber in a fleet by evaluating the trade-off between the cost in tool time required to run nonproduct wafers (NPW’s) for qualifying additional recipes versus the benefit of having as many recipes as possible qualified to maximize flexibility. The model specifically addresses an issue observed in high volume fabs such as large memory fabs, where most of the tools are qualified to run several recipes. In these situations, in which the number of tools is much greater than the number of recipes and substantial resources (such as process and metrology tool time, non-product wafers, and labor) are required to qualify each recipe, the cost in tool time for qualifying many recipes on each tool can outweigh the benefits in flexibility. Based on typical product mixes and qualification requirements in such a fab, we demonstrate that using this model could reduce the tool time required to run qualification wafers and increase the time available to run production wafers by 1% or more with minimal or no impact on cycle time.","PeriodicalId":6771,"journal":{"name":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"60 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84788010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信