A. Pongrácz, J. Szívós, F. Ujhelyi, Z. Zolnai, Ö. Sepsi, Á. Kun, G. Nadudvari, J. Byrnes, L. Rubin, Edward D. Moore
{"title":"低能量离子注入过程的倾斜角度和剂量率监测与光电调制反射测量:AM:先进计量学","authors":"A. Pongrácz, J. Szívós, F. Ujhelyi, Z. Zolnai, Ö. Sepsi, Á. Kun, G. Nadudvari, J. Byrnes, L. Rubin, Edward D. Moore","doi":"10.1109/ASMC49169.2020.9185326","DOIUrl":null,"url":null,"abstract":"Photo-modulated reflectance measurements provide a powerful, non-contact, non-destructive and inline-compatible method with low-cost operation for statistical process control of ion implantation steps on monitor and on product wafers. We present case studies describing how photo-modulated reflectivity measurements (PMR) can be used for ion implantation dose, fluence and tilt angle monitoring with excellent resolution, even for low-energy ion implantation processes. This is important because precise dopant and damage profile control is crucial in state-of-the art semiconductor processes utilizing shallow junctions and complex 3D doping profiles.","PeriodicalId":6771,"journal":{"name":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"33 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Tilt angle and dose rate monitoring of low energy ion implantation processes with photomodulated reflectance measurement : AM: Advanced Metrology\",\"authors\":\"A. Pongrácz, J. Szívós, F. Ujhelyi, Z. Zolnai, Ö. Sepsi, Á. Kun, G. Nadudvari, J. Byrnes, L. Rubin, Edward D. Moore\",\"doi\":\"10.1109/ASMC49169.2020.9185326\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Photo-modulated reflectance measurements provide a powerful, non-contact, non-destructive and inline-compatible method with low-cost operation for statistical process control of ion implantation steps on monitor and on product wafers. We present case studies describing how photo-modulated reflectivity measurements (PMR) can be used for ion implantation dose, fluence and tilt angle monitoring with excellent resolution, even for low-energy ion implantation processes. This is important because precise dopant and damage profile control is crucial in state-of-the art semiconductor processes utilizing shallow junctions and complex 3D doping profiles.\",\"PeriodicalId\":6771,\"journal\":{\"name\":\"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"volume\":\"33 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC49169.2020.9185326\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC49169.2020.9185326","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Tilt angle and dose rate monitoring of low energy ion implantation processes with photomodulated reflectance measurement : AM: Advanced Metrology
Photo-modulated reflectance measurements provide a powerful, non-contact, non-destructive and inline-compatible method with low-cost operation for statistical process control of ion implantation steps on monitor and on product wafers. We present case studies describing how photo-modulated reflectivity measurements (PMR) can be used for ion implantation dose, fluence and tilt angle monitoring with excellent resolution, even for low-energy ion implantation processes. This is important because precise dopant and damage profile control is crucial in state-of-the art semiconductor processes utilizing shallow junctions and complex 3D doping profiles.