2018 IEEE/MTT-S International Microwave Symposium - IMS最新文献_第10页

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2018 IEEE/MTT-S International Microwave Symposium - IMS Pub Date : 2018-06-01 DOI: 10.1109/mwsym.2018.8439611

引用次数: 0

Micromachined Silicon-core Substrate-integrated Waveguides with Co-planarprobe Transitions at 220–330 GHz 220-330 GHz共面探针跃迁的微机械硅芯衬底集成波导

2018 IEEE/MTT-S International Microwave Symposium - IMS Pub Date : 2018-06-01 DOI: 10.1109/MWSYM.2018.8439598

Aleksandr Krivovitca, U. Shah, O. Glubokov, J. Oberhammer

{"title":"Micromachined Silicon-core Substrate-integrated Waveguides with Co-planarprobe Transitions at 220–330 GHz","authors":"Aleksandr Krivovitca, U. Shah, O. Glubokov, J. Oberhammer","doi":"10.1109/MWSYM.2018.8439598","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439598","url":null,"abstract":"In this paper, we present for the first time on, to the best of our knowledge, the first silicon-core micromachined sub-strate-integrated waveguide (SIW) in the 220–325 GHz frequency range. In contrast to the fabrication methods used for conventional SIW known from substantially lower frequencies, micromachining allows for a full-height waveguide and near-ideal and arbitrarily shaped sidewalls. The silicon dielectric core allows for downscaling the waveguide and components by a factor of 3.4 as compared to an air-filled waveguide. At 330 GHz, the measured waveguide insertion loss is as low as 0.43 dB/mm (0.14 dB/λg, normalized to the guided wavelength). Devices were manufactured using a two-mask micromachining process. Furthermore, a low-loss ultra-wideband coplanar-waveguide (CPW) transition was successfully implemented, which comprises the very first CPW-to-SIW transitions in this frequency range. The measured transition performance is better than 0.5 dB insertion loss (average of 0.43 dB in the band above 15% above the waveguide-cutoff frequency), which is lower than previously reported CPW-to-SIW transitions even at 3 times lower frequencies, and the return loss is better than 14 dB for 75% of the waveguide band.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"158 1","pages":"190-193"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88285205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

A Low-Phase-Noise 20 GHz Phase-Locked Loop with Parasitic Capacitance Reduction Technique for V-band Applications 一种v波段低相位噪声的20ghz锁相环寄生电容减小技术

2018 IEEE/MTT-S International Microwave Symposium - IMS Pub Date : 2018-06-01 DOI: 10.1109/MWSYM.2018.8439148

Hee Sung Lee, Kwang Kyu Hwang, D. Kang, S. Cho, C. Byeon, C. Park

引用次数: 1

Design Technique for Integration of Manifold Multiplexers Considering Constraints on Inter-Channel Spacings 考虑信道间距约束的流形多路复用器集成设计技术

2018 IEEE/MTT-S International Microwave Symposium - IMS Pub Date : 2018-06-01 DOI: 10.1109/MWSYM.2018.8439419

A. Cordon, I. Arregui, I. Arnedo, F. Tcberio, C. Arnold, M. Laso, J. Lorente

引用次数: 2

Scalable mm-Wave 4-Channel Radar SoC with Vector Modulators and Demodulators for MIMO and Phased Array Applications 可扩展的毫米波4通道雷达SoC与矢量调制器和解调的MIMO和相控阵应用

2018 IEEE/MTT-S International Microwave Symposium - IMS Pub Date : 2018-06-01 DOI: 10.1109/MWSYM.2018.8439533

H. Ng, R. Feger, D. Kissinger

引用次数: 6

X-band Integrated Printed Antenna Measurement x波段集成印刷天线测量

2018 IEEE/MTT-S International Microwave Symposium - IMS Pub Date : 2018-06-01 DOI: 10.1109/MWSYM.2018.8439526

Michael Hollenbeck, R. Smith, Clinton Cathey, Janos Opra

引用次数: 1

A High-Efficiency E-band SiGe HBT Frequency Tripler with Broadband Performance 一种具有宽带性能的高效e波段SiGe HBT三倍频器

2018 IEEE/MTT-S International Microwave Symposium - IMS Pub Date : 2018-06-01 DOI: 10.1109/MWSYM.2018.8439269

Peigen Zhou, Jixin Chen, Huanbo Li, Debin Hou, P. Yan, Chao Yu, W. Hong

{"title":"A High-Efficiency E-band SiGe HBT Frequency Tripler with Broadband Performance","authors":"Peigen Zhou, Jixin Chen, Huanbo Li, Debin Hou, P. Yan, Chao Yu, W. Hong","doi":"10.1109/MWSYM.2018.8439269","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439269","url":null,"abstract":"A compact E-band frequency tripler with broadband performance is implemented in a $0.13 mu mathrm{m}$ SiGe BiCMOS technology. A high pass filter and transformers impedance matching were used in a fully differential cascode topology to improve the harmonic suppression and broadband performance. Besides, a RF virtual ground capacitor in parallel with base of the CB transistor was proposed in the buffer stage that can enhance the output power by more than 1.7 dB. Followed by a buffer amplifier, the proposed tripler exhibits a measured 3-dB bandwidth ranging from 69 to 86 GHz with a peak output power of 9.9 dBm at 78 GHz. The suppression of fundamental and second-harmonic frequency is more than 35 and 33 dBc, respectively. The tripler can work properly between industrial temperature range (-40°C to 125°C). The tripler with buffer amplifier occupies only 158 mW from a 3.3 V supply. To the best of our knowledge, the proposed tripler demonstrates the highest output power and DC-to-RF efficiency, largest harmonic suppression that covers industrial temperature range compared with other silicon based E-band triplers.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"19 1","pages":"690-693"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80250492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 16

Integrated Third-Order Millimeter-Wave On-Chip Bandpass Filter using 0.13-μm SiGe Bi-CMOS Technology 采用0.13 μm SiGe双cmos技术的集成三阶毫米波片上带通滤波器

2018 IEEE/MTT-S International Microwave Symposium - IMS Pub Date : 2018-06-01 DOI: 10.1109/MWSYM.2018.8439325

Yang Yang, He Zhu, Xi Zhu, Q. Xue

{"title":"Integrated Third-Order Millimeter-Wave On-Chip Bandpass Filter using 0.13-μm SiGe Bi-CMOS Technology","authors":"Yang Yang, He Zhu, Xi Zhu, Q. Xue","doi":"10.1109/MWSYM.2018.8439325","DOIUrl":"https://doi.org/10.1109/MWSYM.2018.8439325","url":null,"abstract":"This paper introduces an on-chip third-order bandpass filter (BPF) for millimeter-wave (mm-wave) applications. The proposed BPF is composed of three identical broadside-coupled meander-line resonators (BCMLR) which are jointly connected by three MIM capacitors through aT-shape network. The MIM capacitors are used as J-inverters for the implementation of the third-order BPF in order to achieve the desired multiple transmission poles and zeros across the passband and stopband, correspondingly. To fully understand the operational mechanism of the proposed high-order structure, the resonator and the proposed BPF are analyzed using an LC- equivalent circuit model for further investigation of the distribution of the transmission poles and zeros in terms of the metal inductance and MIM capacitance. To prove the concept, the proposed BPF prototype is implemented in a commercial 0.13-l.lm SiGe (Bi)-CMOS process. According to the results obtained from on-wafer measurement, three transmission poles and three transmission zeros are clearly observed. Noticeably, the proposed BPF exhibits excellent performances including a flat in-band response (less than 1 dB attenuation) from 26.7 GHz to 44.3 GHz with a measured insertion loss of 3.1 dB at the center frequency of 35.5 GHz and stopband attenuation up to 35 dB at 59 GHz. The chip size is 0.016 mm2(0.066 × 0.236 mm-), excluding the GSG pads.","PeriodicalId":6675,"journal":{"name":"2018 IEEE/MTT-S International Microwave Symposium - IMS","volume":"10 1","pages":"1095-1098"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81532724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

A 5.8 GHz 1.77mW AFSK-OFDM CMOS Backscatter Transmitter for Low Power IoT Applications 用于低功耗物联网应用的5.8 GHz 1.77mW AFSK-OFDM CMOS反向散射发射器

2018 IEEE/MTT-S International Microwave Symposium - IMS Pub Date : 2018-06-01 DOI: 10.1109/MWSYM.2018.8439341

A. Tang, Y. Kim, G. Virbila, M. Chang

引用次数: 1

Towards the Source Reconstruction with a Time-Reversal Method for Practical Applications 基于时间反转方法的信号源重建研究

2018 IEEE/MTT-S International Microwave Symposium - IMS Pub Date : 2018-06-01 DOI: 10.1109/MWSYM.2018.8439665

Jing Liang, Z. Chen, Jinyan Li, Yiqiang Yu, Junfeng Wang

引用次数: 2