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PDMS young's modulus calibration for micropillar force sensor application PDMS杨氏模量校正在微柱力传感器中的应用
2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7354912
S. Johari, H. Fazmir, A. Anuar, M. Zainol, Volker Nock, Wenhui Wang
{"title":"PDMS young's modulus calibration for micropillar force sensor application","authors":"S. Johari, H. Fazmir, A. Anuar, M. Zainol, Volker Nock, Wenhui Wang","doi":"10.1109/RSM.2015.7354912","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354912","url":null,"abstract":"This paper reports on the calibration of PDMS Young's Modulus device which is applied as force sensor to measure C. elegans locomotion. The Young's Modulus of the PDMS is determined using a piezoresistive silicon force sensor. Four sets of PDMS devices are prepared using similar fabrication method, as we want to ensure that the PDMS fabrication process used in this work is capable of producing consistent material properties. From each device, three different samples are produced and tested using the sensor. The Young's Modulus of the PDMS is determined to be 1.47 MPa. The results are also compared with Young's Modulus values obtained in other researches. We found that the two main factors that affect the PDMS Young's Modulus value are baking time and curing temperature, where higher and longer temperature and baking time lead to stiffer PDMS.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"14 6","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91424655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Physical properties of hydrothermal growth nanostructure metal titanium dioxide 水热生长纳米结构金属二氧化钛的物理性质
2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7355032
M. Zakaria, N. Farahin, R. Osman, Sh. Nadzirah, A. H. Azman, U. Hashim, M. K. Md Arshad
{"title":"Physical properties of hydrothermal growth nanostructure metal titanium dioxide","authors":"M. Zakaria, N. Farahin, R. Osman, Sh. Nadzirah, A. H. Azman, U. Hashim, M. K. Md Arshad","doi":"10.1109/RSM.2015.7355032","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355032","url":null,"abstract":"Growth of titanium dioxide (TiO2) nanowires was studied on the seed layer of TiO2 through hydrothermal growth method. Here, the growth of nanowires TiO2 on Si (100) substrates by using the two steps method. Different seed layers of TiO2 were prepared by using sol-gel method, deposited by spin coating and annealing, followed by the growth of TiO2 nanowires by using the hydrothermal method. Acetic acid was used as a stabilizer to synthesize a TiO2 seed layer. The aim of this study was to understand the role of polycrystalline size on thin film towards the diameter of nanowires grown as a sensing area in Surface Acoustic Wave (SAW) Biosensor. The morphology and microstructure of the thin film seed layer and TiO2 nanowires were characterized using X-Ray diffraction (XRD), scanning electron microscope (SEM), field emission scanning electron microscope (FESEM) and atomic force microscopy (AFM).","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"28 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84619038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
3C-SiC-on-Si based MEMS packaged capacitive pressure sensor operating up to 500 ºC and 5 MPa 基于3C-SiC-on-Si的MEMS封装电容式压力传感器，工作温度高达500ºC和5 MPa
2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7354962
Noraini Marsi, B. Majlis, A. A. Hamzah, H. E. Z. Abidin, F. Mohd-Yasin
{"title":"3C-SiC-on-Si based MEMS packaged capacitive pressure sensor operating up to 500 ºC and 5 MPa","authors":"Noraini Marsi, B. Majlis, A. A. Hamzah, H. E. Z. Abidin, F. Mohd-Yasin","doi":"10.1109/RSM.2015.7354962","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354962","url":null,"abstract":"This paper reports a packaged MEMS capacitive pressure sensor based 3C-SiC using bulk-micromachining technology that operates on the pressure up to 5.0 MPa and temperature up to 500 oC. The diaphragm employs a single-crystal 3C-SiC thin film that is back-etched from its Si substrate. A photosensitive ProTEK PSB is used as a protection mask layer to reduce the process steps. We compare our results with similar work that also employs a single-crystal 3C-SiC-on-Si capacitive pressure sensor with ceramic package. The MEMS capacitive pressure sensor is employed with 3C-SiC that was performed using hot wall low pressure chemical vapor deposition (LPCVD) reactors at the Queensland Micro and Nanotechnology Center (QMNC), Griffith University. This paper also focuses on comparing those two highest efficiency distributions in MEMS capacitive pressure sensor device to other types of MEMS capacitive pressure sensor. Different temperature, hysteresis and repeatability tests are presented to demonstrate the functionality of the packaged MEMS capacitive pressure sensor. As expected, the output hysteresis has low hysteresis (less than 0.05%) which has inflexibility greater than traditional silicon. By utilizing this low hysteresis was revealed the packaged MEMS capacitive pressure sensor has high repeatability and stability of the sensor.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"86 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83318173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study on chemically modified graphene platforms for biosensor applications 用于生物传感器的化学修饰石墨烯平台研究
2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7355036
M. Fadhlina, A. R. Ruslinda, M. K. Md Arshad, S. Gopinath, M. F. Fatin, C. Voon, K. L. Foo, U. Hashim, R. M. Ayub
{"title":"Study on chemically modified graphene platforms for biosensor applications","authors":"M. Fadhlina, A. R. Ruslinda, M. K. Md Arshad, S. Gopinath, M. F. Fatin, C. Voon, K. L. Foo, U. Hashim, R. M. Ayub","doi":"10.1109/RSM.2015.7355036","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355036","url":null,"abstract":"The biosensor platform of graphene material has grown rapidly in the past few years due to their unique properties in electrical, thermal conductivity, large surface area, high fracture strength, high young modulus and biocompatibility. In this work, the chemically modified graphene oxide solutions were studied for electrical performance toward biosensor applications. The graphene oxide solutions were sprayed manually on top of silicon substrate at various temperatures of 100, 200 and 300°C, respectively. Out of those temperatures, at 100°C, the surface morphology of reduction graphene oxide showed a better performance in electrical measurement. Atomic Force Microscopy (AFM) and Scanning Electron Microscopy were carried out to investigate the thermal reduction and the formation of graphene through surface morphology observation. Then a surface modification will conducted using APTES and electrical characteristic of the current-voltage (i-v) were performed.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"520 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78373967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Towards high performance graphene nanoribbon transistors (GNR-FETs) 迈向高性能石墨烯纳米带晶体管(gnr - fet)
2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7355030
A. Khalid, J. Sampe, B. Majlis, M. A. Mohamed, T. Chikuba, T. Iwasaki, H. Mizuta
{"title":"Towards high performance graphene nanoribbon transistors (GNR-FETs)","authors":"A. Khalid, J. Sampe, B. Majlis, M. A. Mohamed, T. Chikuba, T. Iwasaki, H. Mizuta","doi":"10.1109/RSM.2015.7355030","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355030","url":null,"abstract":"We fabricated trilayer graphene nanoribbon (GNR) Field Effect Transistors (FETs) by means of mechanical exfoliation method and investigate the characteristics of the device. The device shows ambipolar operation with a good Ohmic contact between the graphene and electrodes. Arrhenius plots of temperature dependence of conductance are consistence with thermal activated conduction above 273 K, and variable range hopping conduction at low temperature. GNR charge carrier provides high electron mobility of 6198 cm2V-1s-1 at 273 K, and lower activation energy of 0.592 meV. This device possesses high performance and requires ultra-low power compare to other reported graphene-based transistors.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"12 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87080055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
FPGA-based hardware-in-the-loop verification of dual-stage HDD head position control 基于fpga的双级硬盘磁头位置控制硬件在环验证
2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7354973
Kiattisak Sengchuai, W. Wichakool, N. Jindapetch, P. Smithmaitrie
{"title":"FPGA-based hardware-in-the-loop verification of dual-stage HDD head position control","authors":"Kiattisak Sengchuai, W. Wichakool, N. Jindapetch, P. Smithmaitrie","doi":"10.1109/RSM.2015.7354973","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354973","url":null,"abstract":"This paper presents a design and verification of a digital controller for dual-stage hard disk drive (HDD) head positioning. A continuous time model of an adaptive PID controller of the dual-stage track following control is converted to a stable discrete time model. Then, the optimizations of sampling rate, arithmetic operation bit-width, and control parameters are performed during digital controller design. Xilinx System Generator is used to generate the hardware description language that can be implemented in a real FPGA. Finally, hardware-in-the-loop verification is performed through a hardware board to guarantee the control model. This method can not only accelerate the design cycle of new HDD models, but also achieve high sampling rate precise head position control implementations. From the verification results, our proposed controller can work at 5.64 MHz sampling rate on a low cost FPGA (Xilinx Spartan-III XC3S400) and the position error (3-sigma) is only 4.2138 % of track.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"17 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75164136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A computational study on transport properties of square graphene nanoconstriction 方形石墨烯纳米结构输运性质的计算研究
2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7355028
S. Husain, Z. Johari
{"title":"A computational study on transport properties of square graphene nanoconstriction","authors":"S. Husain, Z. Johari","doi":"10.1109/RSM.2015.7355028","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355028","url":null,"abstract":"Continuous scaling of device dimension allows the integration of an increasing number of transistors on a single chip. As its move beyond the Moore's Law, carbon - based nanoelectronics such as Graphene emerges. The purpose of this study is to investigate the transport behaviour of Graphene Nanoconstriction (GNC) with square geometry. The transmission spectra and current - voltage (I-V) characteristic are simulated. From the simulation, markable change in I-V trend is achieved when the GNC dimension was vary where saturation region appear. The length of the constriction is found to have considerable effect to the transport properties. The result provides physical insight for better understanding the transport properties of GNC.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"47 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81599300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Real time motorcycle image detections on field programmable gate array 基于现场可编程门阵列的摩托车实时图像检测
2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7354961
M. Nong, R. Osman, Juraina Md Yusof, R. Sidek
{"title":"Real time motorcycle image detections on field programmable gate array","authors":"M. Nong, R. Osman, Juraina Md Yusof, R. Sidek","doi":"10.1109/RSM.2015.7354961","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354961","url":null,"abstract":"Development of real time motorcycle image detections on field programmable architecture is presented in this paper. This paper describes a process to generate a bounding box and analyzes the system performance in tracking the image and hardware utilize. This paper also discussed on image processing algorithm used and embedded techniques involved. The performance evaluation results also indicated and shows that development design meet the requirement.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"18 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82318659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Wet chemical cleaning effect on the formation of ultrathin interfacial layer between Germanium (Ge) and high-k dielectric 湿式化学清洗对锗(Ge)与高k介电介质之间超薄界面层形成的影响
2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7355015
S. K. Sahari, Nik Amni Fathi Nik Zaini Fathi, N. M. Sutan, R. Sapawi, A. A. Hamzah, B. Majlis
{"title":"Wet chemical cleaning effect on the formation of ultrathin interfacial layer between Germanium (Ge) and high-k dielectric","authors":"S. K. Sahari, Nik Amni Fathi Nik Zaini Fathi, N. M. Sutan, R. Sapawi, A. A. Hamzah, B. Majlis","doi":"10.1109/RSM.2015.7355015","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355015","url":null,"abstract":"This paper investigates and discusses the effect of wet chemical cleaning; Hydrochloric Acid (HCl) and Hydrofluoric Acid (HF) to the growth of interfacial layer between high-k material (Al2O3) and Ge (100) surface. Characterization and morphology techniques using Field Emission Scanning Electron Microscope (FESEM) was carried out to determine the thickness of interfacial layer between Al2O3 and Ge (100) surface. Results of this study showed that an HF treatment gives a rougher surface of Al2O3 than HCl treatment. Both wet chemical cleaning resulted with step and terrace trend of Al2O3 and interfacial layer. This may be due to initial Ge surface just after HF cleaning is rougher than the initial Ge surface after HCl cleaning.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"7 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85131000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Characterization of ROFF/RON ratio of fluidic based memristor sensor for pH detection 流体基忆阻器pH检测ROFF/RON比的表征
2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7354956
N. Hadis, Asrulnizam Abd Manaf, S. H. Herman
{"title":"Characterization of ROFF/RON ratio of fluidic based memristor sensor for pH detection","authors":"N. Hadis, Asrulnizam Abd Manaf, S. H. Herman","doi":"10.1109/RSM.2015.7354956","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354956","url":null,"abstract":"This paper reports a new design for a memristor with an embedded channel to study the effect of liquids on ROFF/RON ratio. There were three types of liquid selected to represent all pH groups comprise of acidity, neutrality, and alkalinity. The liquids were added to the channel and the ROFF/RON ratio was calculated based on the I-V characteristics. The obtained ROFF/RON ratios showed a direct proportional relationship between ROFF/RON ratio and the pH value indicating the potential of this embedded channel memristor to be used as the most flexible ROFF/RON ratio memristor. The low ROFF/RON ratio of normal memristor at low voltage can be improved by adding alkaline liquid to the channel. The structure of the proposed memristor device is believed to be the simplest structure among the other similar sensors developed by other researchers.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"39 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84359458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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