2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)最新文献_第4页

Development of a read-out circuitry for piezoresistive microcantilever electrical properties measurement 压阻式微悬臂电性能测量读出电路的研制

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7354911

A. Anuar, S. Johari, Y. Wahab, M. Zainol, H. Fazmir, M. Mazalan, M. Arshad

引用次数: 3

Verification of the thin film metal layer thickness by energy dispersive X-ray 用能量色散x射线验证薄膜金属层厚度

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7355004

Lai Chin Yung, C. C. Fei

{"title":"Verification of the thin film metal layer thickness by energy dispersive X-ray","authors":"Lai Chin Yung, C. C. Fei","doi":"10.1109/RSM.2015.7355004","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355004","url":null,"abstract":"Leadframe fabrication process normally involves additional thin film metal layer plating on the bulk copper substrate surface for wire bond purpose. The recent commonly adopted plating materials are silver, tin, and copper flake. To assess the thickness quality, the conventional X-section methods involving grinding and polishing process are utilized. However, the process may lead to inaccurate results, which stems from the occurrence of sample preparation artifact, such as smearing effect attributable to the grinding or polishing process. Thus, alternative advanced methods are developed for assessing the thin film metal layer thickness, such as Focus Ion Beam (FIB), SIMS profiling or XPS, readily available in worldwide market. However, these alternative measurement services are very costly and time consuming per sample measure. To cater the cost and long sample preparation time due to the abovementioned advanced methods, an Energy Dispersive X-ray (EDX) can be applied. In this study, the newly invented methodology breakthrough had been validated by applying EDX for the first time on known bulk elemental analysis purpose. EDX feature is not only useful for elemental analysis but also applicable for thin film-metal layer thickness measurement and bulk material densification determination. A promising result was observed from the detailed experiment work through applying EDX in this evaluation.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"14 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84704212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Simulation of an hybrid blood cells micro-separator 混合血细胞微型分离器的模拟

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7354955

Foughalia Aissa, R. A. Rahim, A. Nordin, S. Ibrahim

引用次数: 2

Numerical simulation of one dimensional (1D) photonic crystal multiple cavities based on silicon on insulator (SOI) 基于绝缘体硅(SOI)的一维光子晶体多腔的数值模拟

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7355022

J. Husna, M. A. Mohamed, J. Sampe, A. M. Md Zain

引用次数: 5

A 3-stage 40 GHz CMOS power amplifier driver for radio-over-fiber technology 用于光纤无线电技术的3级40 GHz CMOS功率放大器驱动器

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7354978

N. Farid, S. Hassan, R. Sanusi, A. Rahim

引用次数: 0

Modeling and simulation of polysilicon piezoresistors in a CMOS-MEMS resonator for mass detection 用于质量检测的CMOS-MEMS谐振器中多晶硅压敏电阻的建模与仿真

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7354957

Mawahib Gafare, M. H. M. Md Khir, A. Rabih, A. Ahmed, J. Dennis

引用次数: 1

A low power multiplexer based pass transistor logic full adder 基于通型晶体管逻辑全加法器的低功耗多路复用器

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7354994

N. Kamsani, Veeraiyah Thangasamy, S. Hashim, Z. Yusoff, M. Bukhori, M. Hamidon

引用次数: 7

CMOS-MEMS thermoelectric generator for low power medical devices 用于低功耗医疗设备的CMOS-MEMS热电发电机

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7354965

Z. H. A. Rahman, M. H. M. Md Khir, Z. A. Burhanudin

引用次数: 3

Modelling of microfluidics network using electric circuits 基于电路的微流体网络建模

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7354954

N. Zaidon, A. Nordin, A. Ismail

引用次数: 3

Effect of zeta potential variation in single phase flow characteristics of a rectangular nanochannel zeta电位变化对矩形纳米通道单相流动特性的影响

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-11 DOI: 10.1109/RSM.2015.7354972

T. Yaakub, J. Yunas, B. Majlis

{"title":"Effect of zeta potential variation in single phase flow characteristics of a rectangular nanochannel","authors":"T. Yaakub, J. Yunas, B. Majlis","doi":"10.1109/RSM.2015.7354972","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354972","url":null,"abstract":"This report presented a 2D model for electroosmotic (EOF) aqueous fluid flow analysis along nanochannels connecting two reservoirs. The model uses the Navier-Stokes equations with electroosmotic velocity boundary condition at nanochannel wall. Zeta potential of the wall surface is varied and the influences on the velocity profile are observed for various channel height. Shear stress rate near the nanochannel entrance of different width has also been investigated. The magnitude velocity lies on the magnitude of zeta potential or the surface charge of the wall. The increased charged on the solid wall, also increased the velocity flow. The decreased height of channel helps to increase the flow velocity along it. The maximum and minimum flow velocities are recorded at channel height of 50nm and 250nm respectively with 35% difference. At all simulated channel height, the flow at the entrance of nanochannel is increased and formed a peak velocity but it will decrease and become uniform at the position far from the channel wall. The shear stress at the reservoir-nanochannel edge is increased with the decreased of channel height due to low aspect ratio of reservoir-channel dimension.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"115 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79099822","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0