2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)最新文献_第2页

Investigation on Optical Interconnect(OI) link performance using external modulator 基于外部调制器的光互连(OI)链路性能研究

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7354980

Siti Sarah Binti Md Sallah, Sawal Hamid Md Ali, P. Menon, M. S. Islam, N. Juhari, S. A. Ahmad

引用次数: 4

A comparative study of photocurable sensing membrane for Potassium ChemFET sensor 钾化场效应晶体管光固化传感膜的比较研究

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7354959

N. A. Rashid, M. Noor, Z. M. Yusof

{"title":"A comparative study of photocurable sensing membrane for Potassium ChemFET sensor","authors":"N. A. Rashid, M. Noor, Z. M. Yusof","doi":"10.1109/RSM.2015.7354959","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354959","url":null,"abstract":"The availability of in-house microelectronic fabrication technology has given an opportunity for the development of chemical sensor based on field effect transistor (FET). Chemical sensing material deposited on the FET device is developed to explore the function as chemically sensitive field effect transistor (ChemFET) for the detection of specific analyte for agriculture and aquaculture applications. In this work, photocurable method was used to develop sensing membrane for Potassium ChemFET (K ChemFET) sensor. Urethane- and Acrylate-based host matrix polymer was selected for a comparative study as a sensing membrane for potassium ion detection. The performance of the sensor was characterized according to its sensitivity and selectivity. Performance test for K ChemFET sensor using both membrane types showed a comparable result with commercial K sensor with sensitivity of near Nernstian value and good linearity (> 0.99) in the range of 10-4 to 10-1 M calibration solution. Selectivity test demonstrated that K Acrylate-based ChemFET with one fold higher than K Urethane-based ChemFET towards Na+, Ca2+ and Mg2+ interfering ions.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"44 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75283265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Designing a boost converter of micro energy harvester using thermal and vibration input for biomedical devices 基于热和振动输入的生物医学微能量采集器升压转换器的设计

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7354974

Nor Afidatul Asni Semsudin, J. Sampe, M. Shabiul Islam, Ahmad Rifqi Md Zain, D. Berhanuddin

{"title":"Designing a boost converter of micro energy harvester using thermal and vibration input for biomedical devices","authors":"Nor Afidatul Asni Semsudin, J. Sampe, M. Shabiul Islam, Ahmad Rifqi Md Zain, D. Berhanuddin","doi":"10.1109/RSM.2015.7354974","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354974","url":null,"abstract":"This work presents a designed of boost converter Hybrid Micro Energy Harvester (HMEH) using thermal and vibration of human body for biomedical application. Thermal converts temperature differences directly into electrical energy. While vibration is based on human movement like walking and shaking body that is able to generate an AC voltage. Having two sources overcome the limitation caused by a single source harvester and improves system functionality. The inputs are set to 0.2V, 0.3V and 0.5V to represent thermal, vibration and combination of thermal and vibration (hybrid) respectively. A rectifier is designed to convert vibration input from AC to DC voltages. The proposed boost converter is used to step-up the small input voltage from thermal and vibration at 2 kHz. The inductance is varied from 0.4μH to 1.2μH, 0.9μH to 2.9μH and 0.3μH to 0.9μH for vibration, thermal and hybrid input respectively. However, the optimize value for the designed is 0.9μH for all sources to achieve the regulated output of 2.0 to 4.0V. Both rectifier and boost converter circuit consist of MOSFET as the heart of the operation. In this paper, the circuits are designed, modeled and simulated using PSPICE software.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"144 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82928376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

Design of optical single mode splitter using ion exchange method for ammonia biosensor 离子交换法氨生物传感器光学单模分路器的设计

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7355025

M. Ariannejad, P. Menon, S. Shaari, A. M. Md Zain, A. Ehsan, F. Larki, A. Abedini, V. Retnasamy

引用次数: 0

The vertical strained impact ionization MOSFET (VESIMOS) for ultra-sensitive biosensor application 用于超灵敏生物传感器的垂直应变冲击电离MOSFET (VESIMOS)

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7354910

I. Saad, B. Hazwani, H. M. Zuhir, C. B. Seng, N. Bolong

{"title":"The vertical strained impact ionization MOSFET (VESIMOS) for ultra-sensitive biosensor application","authors":"I. Saad, B. Hazwani, H. M. Zuhir, C. B. Seng, N. Bolong","doi":"10.1109/RSM.2015.7354910","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354910","url":null,"abstract":"This paper venture into prospective ideas of finding the best feasible candidates for future bio-based sensor by exploring an emerging device structure with elevated performance and reliable outcomes of vertical strained impact ionization MOSFET (VESIMOS) with dual strained SiGe and dielectric pocket (DP) technology. An overview of the simulated fabrication process and the performance of the three promising candidates for succession of the conventional vertical Impact Ionization MOSFET (IMOS): Single Channel vertical strained impact ionization MOSFET (SC-VESIMOS) [13], Dual Channel vertical strained impact ionization MOSFET (DC-VESIMOS) [14] and vertical strained impact ionization MOSFET incorporating Dielectric Pocket (VESIMOS-DP) is investigated using Silvaco package. These three devices offer possibilities to overcome physical limits occurring during the continuous shrinking process like the limitation of the subthreshold swing S to 60 mV/dec at room temperature or rising leakage currents due to tunneling. The performance of these novel devices can be extremely promising for applications where ultra-high sensitivity and fast response is desirable. An ultra-low power with low Subthreshold Swing and high breakdown voltage are imperative for ultra-sensitive biosensor. Eventually, these devices will prolong the increase density of transistor on a chip for future application of biosensor nanoelectronics.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"18 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75580403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Fabrication and characterization of SAW IDT biosensor for biomolecule detection 用于生物分子检测的SAW - IDT生物传感器的制备与表征

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7354960

M. Zakaria, M. Omar, A. H. Azman, U. Hashim, M. K. Md Arshad

引用次数: 1

Photoresist residue defect by etch byproduct on PIP etch process PIP蚀刻过程中蚀刻副产物光刻胶残留缺陷

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7355010

Sim Ming Dau, Oh Sang Hun, C. C. Chin, Lee Eng Eng, You Hyuk Joon, Lee Boon Chun

引用次数: 1

Low temperature bonding techniques for MEMS devices MEMS器件的低温键合技术

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7354958

Anuroop, D. Bansal, Prem Kumar, M. Kaur, K. Rangra

引用次数: 2

Modeling microparticles' path in DEP-FFF microfludic devices deep - fff微流控装置中微粒路径的建模

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7354997

B. Mathew, A. Alazzam, Mohammad Abutayeh, I. Stiharu

引用次数: 1

Effect of isopropyl alcohol (IPA) on etching rate and surface roughness of silicon etched in KOH solution 异丙醇(IPA)对KOH溶液中硅刻蚀速率和表面粗糙度的影响

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-12-17 DOI: 10.1109/RSM.2015.7355008

N. Burham, A. A. Hamzah, B. Majlis

引用次数: 9