Characterization of ROFF/RON ratio of fluidic based memristor sensor for pH detection

N. Hadis, Asrulnizam Abd Manaf, S. H. Herman
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引用次数: 1

Abstract

This paper reports a new design for a memristor with an embedded channel to study the effect of liquids on ROFF/RON ratio. There were three types of liquid selected to represent all pH groups comprise of acidity, neutrality, and alkalinity. The liquids were added to the channel and the ROFF/RON ratio was calculated based on the I-V characteristics. The obtained ROFF/RON ratios showed a direct proportional relationship between ROFF/RON ratio and the pH value indicating the potential of this embedded channel memristor to be used as the most flexible ROFF/RON ratio memristor. The low ROFF/RON ratio of normal memristor at low voltage can be improved by adding alkaline liquid to the channel. The structure of the proposed memristor device is believed to be the simplest structure among the other similar sensors developed by other researchers.
流体基忆阻器pH检测ROFF/RON比的表征
为研究液体对ROFF/RON比的影响,设计了一种嵌入式通道记忆电阻器。有三种类型的液体被选择来代表所有的pH值组,包括酸性、中性和碱性。将液体加入到通道中,并根据I-V特性计算ROFF/RON比。得到的ROFF/RON比与pH值成正比关系,表明该嵌入式沟道忆阻器具有作为最灵活的ROFF/RON比忆阻器的潜力。通过在通道中加入碱性液体,可以改善普通忆阻器在低电压下的低ROFF/RON比。所提出的忆阻器器件的结构被认为是其他研究人员开发的其他类似传感器中结构最简单的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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