发布求助
文献互助 智能选刊 最新文献

2014 International Semiconductor Conference (CAS)最新文献

筛选
英文 中文
Constraint random stimuli and functional coverage on mixed signal verification 混合信号验证中的约束随机刺激和功能覆盖
2014 International Semiconductor Conference (CAS) Pub Date : 2014-12-01 DOI: 10.1109/SMICND.2014.6966446
Ioana Iliuta, Cristian Tepus
{"title":"Constraint random stimuli and functional coverage on mixed signal verification","authors":"Ioana Iliuta, Cristian Tepus","doi":"10.1109/SMICND.2014.6966446","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966446","url":null,"abstract":"With a constantly increasing complexity, developing today's IC is more challenging not only in design, but also in integration and verification. The new approach is to use the same tools and methodologies from digital verification and to extended them to mixed signal, resulting a metric driven functional and electrical verification. In this paper the reasons for using this technique will be described, together with methodology and environment, providing also, as a demonstration and an argument, a practical example.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"20 1","pages":"237-240"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77388209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
On nonlinear distortions analysis of CMOS circuits CMOS电路的非线性畸变分析
2014 International Semiconductor Conference (CAS) Pub Date : 2014-12-01 DOI: 10.1109/SMICND.2014.6966452
M. Gurzun, L. Goras
{"title":"On nonlinear distortions analysis of CMOS circuits","authors":"M. Gurzun, L. Goras","doi":"10.1109/SMICND.2014.6966452","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966452","url":null,"abstract":"The aim of this communication is to present some aspects regarding nonlinear distortion analysis in circuits implemented in CMOS technology. Basically, the investigations envisage the shape of the total harmonic distortion (THD) dependence on the amplitude and frequency of the input signals. It is apparent that the above function gives interesting insight of the nonlinear behavior of the studied circuits and it is worth considering for further investigations.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"14 1","pages":"255-258"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88831554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Application enhancement for driving large strings of LEDs 驱动大串led的应用增强
2014 International Semiconductor Conference (CAS) Pub Date : 2014-12-01 DOI: 10.1109/SMICND.2014.6966437
G. Pristavu, A. Vasilica, V. Anghel, G. Brezeanu
{"title":"Application enhancement for driving large strings of LEDs","authors":"G. Pristavu, A. Vasilica, V. Anghel, G. Brezeanu","doi":"10.1109/SMICND.2014.6966437","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966437","url":null,"abstract":"A technique for increasing the number of series connected LEDs driven by a current-mode floating buck converter is analyzed, simulated and implemented. The converter uses an external power switch, driven by a previously introduced low-cost variable frequency controller. The increase in input voltage and number of driven LEDs is achieved by the addition of a level shifter at the controller's output which enhances its capability to drive a power MOSFET switch. Measurements performed on the improved converter biasing a maximum of 16 LEDs at up to 75V emphasize a peak efficiency of 94.6%. An efficiency over 87% can be obtained in all cases.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"40 1","pages":"207-210"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83581431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The effect of annealing in nitrogen atmosphere on the structure, photoluminescence and electrical properties of Li and Cu doped sol-gel ZnO films 氮气氛退火对Li和Cu掺杂ZnO薄膜结构、光致发光和电学性能的影响
2014 International Semiconductor Conference (CAS) Pub Date : 2014-12-01 DOI: 10.1109/SMICND.2014.6966396
A. Danciu, I. Mihalache, M. Danila, B. Bita, R. Plugaru
{"title":"The effect of annealing in nitrogen atmosphere on the structure, photoluminescence and electrical properties of Li and Cu doped sol-gel ZnO films","authors":"A. Danciu, I. Mihalache, M. Danila, B. Bita, R. Plugaru","doi":"10.1109/SMICND.2014.6966396","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966396","url":null,"abstract":"The effect of annealing in air and in nitrogen atmosphere on the structure, luminescence emission and electrical properties of ZnO, Li:ZnO and Cu:ZnO doped thin films prepared by sol-gel method was investigated by scanning electron microscopy, X-ray diffraction, photoluminescence and resistivity measurements. The films annealed in nitrogen demonstrate smoother surfaces, improved crystallinity and conductivity. The residual stress in doped films changes from tensile type, when annealed in air, to compressive type in the case of annealing in nitrogen atmosphere. The effect is associated with the density of lattice defects in the films annealed in nitrogen.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"3 1","pages":"77-80"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78391648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A new non-volatile memory cell based on the flash architecture for embedded low energy applications: ATW (Asymmetrical Tunnel Window) 嵌入式低能耗应用中基于闪存架构的新型非易失性存储单元:ATW(不对称隧道窗)
2014 International Semiconductor Conference (CAS) Pub Date : 2014-12-01 DOI: 10.1109/SMICND.2014.6966409
J. Bartoli, V. Della Marca, J. Delalleau, A. Régnier, S. Niel, F. la Rosa, J. Postel-Pellerin, F. Lalande
{"title":"A new non-volatile memory cell based on the flash architecture for embedded low energy applications: ATW (Asymmetrical Tunnel Window)","authors":"J. Bartoli, V. Della Marca, J. Delalleau, A. Régnier, S. Niel, F. la Rosa, J. Postel-Pellerin, F. Lalande","doi":"10.1109/SMICND.2014.6966409","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966409","url":null,"abstract":"In this paper we propose a new non-volatile charge trap memory architecture implemented on 200mm wafer in 90nm technology node. The aim of this work is to investigate an alternative and scalable solution for embedded low energy applications. The Asymmetrical Tunnel Window (ATW) memory cell has been developed in order to improve the programming operation during a hot carrier injection. The main property of this device is the presence of an asymmetrical tunnel oxide thickness along the channel. This characteristics enables an improvement in terms of current consumption and injection efficiency with respect to the standard Flash floating gate memory cell. In this work we describe the fabrication process of ATW memory cell and, using a commercial TCAD simulator and experimental results, we demonstrate the good functioning of our device thanks to the increased control gate/floating gate (CG/FG) coupling factor. To conclude we confirm the reliability performances with the endurance experiments up to 100k cycles.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"46 1","pages":"117-120"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85843463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Selecting super hydrophilic phosphate masses coatings electrodeposited on titanium for medical applications 医用钛电沉积超亲水性磷酸盐团块涂层的选择
2014 International Semiconductor Conference (CAS) Pub Date : 2014-12-01 DOI: 10.1109/SMICND.2014.6966408
D. C. Romonți, G. Anghel, G. Voicu
{"title":"Selecting super hydrophilic phosphate masses coatings electrodeposited on titanium for medical applications","authors":"D. C. Romonți, G. Anghel, G. Voicu","doi":"10.1109/SMICND.2014.6966408","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966408","url":null,"abstract":"In order to elaborate a very strong hydrophilic phosphate masses coating on titanium, an electrodeposition method was performed after polishing, etching and ultrasonication of samples. Electrodeposition took place in three electrodes cell at different working parameters (time and temperature). After electrodeposition all samples were calcinated for 1 hour at 4000C, in order to increase the crystalinitty and the purity. The coating characterization has included FT-IR SEM, XRD, AFM, and contact angle determinations and has indicated a rough coating with plaques crystals and small needles of HAP, good ratio Ca/P, and superhydrophilic character. The high surface energy denotes good bioadhesion.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"1 1","pages":"113-116"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88181795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performances under saturation operation of p-channel FinFETs on SOI substrates at cryogenic temperature 低温下SOI衬底p沟道finfet饱和工作性能
2014 International Semiconductor Conference (CAS) Pub Date : 2014-12-01 DOI: 10.1109/smicnd.2014.6966429
H. Achour, B. Crețu, J. Routoure, R. Carin, A. Benfdila, E. Simoen, C. Claeys
{"title":"Performances under saturation operation of p-channel FinFETs on SOI substrates at cryogenic temperature","authors":"H. Achour, B. Crețu, J. Routoure, R. Carin, A. Benfdila, E. Simoen, C. Claeys","doi":"10.1109/smicnd.2014.6966429","DOIUrl":"https://doi.org/10.1109/smicnd.2014.6966429","url":null,"abstract":"The impact of cryogenic temperature operation on the short channel effects and analog performances was analysed on strained and unstrained p-channel SOI FinFETs. The main electrical parameters extracted from the saturation mode of operation are investigated and compared to those found at room temperature. Low frequency noise measurements at 10 K operation show that the carrier number fluctuations dominate the flicker noise in moderate inversion, while the access resistance noise contributions prevail in strong inversion.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"11 1","pages":"181-184"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84599493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Demonstration of temperature compensated voltage reference integrated circuit designed with 4H-SiC MESFETs 用4H-SiC mesfet设计的温度补偿电压参考集成电路的演示
2014 International Semiconductor Conference (CAS) Pub Date : 2014-12-01 DOI: 10.1109/SMICND.2014.6966445
V. Banu, P. Godignon, M. Alexandru, M. Vellvehí, X. Jordà, J. Millán
{"title":"Demonstration of temperature compensated voltage reference integrated circuit designed with 4H-SiC MESFETs","authors":"V. Banu, P. Godignon, M. Alexandru, M. Vellvehí, X. Jordà, J. Millán","doi":"10.1109/SMICND.2014.6966445","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966445","url":null,"abstract":"This work demonstrate for the first time a functional high temperature compensated Voltage Reference integrated circuit (IC) on 4H-SiC material, built with MESFET devices. A special finger type MESFET that overcome the typical embedded drain leakage of finger type MESFET, was developed for this purpose. The schematic and the principle of the circuit is based on a new concept design that avoid the bandgap reference topology and the necessity of using an operational amplifier (OpAmp), which is not yet developed on SiC. The experimental temperature coefficient (TC) is significantly better than a Zener diode and comparable to the normal bandgap voltage references on silicon, but the present circuit has the advantage to be able to work beyond 250oC. The circuit contains also a linear temperature sensor.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"461 1","pages":"233-236"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86691560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Temperature behavior of 4H-SIC MOS capacitor used as a gas sensor 用作气体传感器的4H-SIC MOS电容器的温度行为
2014 International Semiconductor Conference (CAS) Pub Date : 2014-12-01 DOI: 10.1109/SMICND.2014.6966430
R. Pascu, G. Pristavu, M. Badila, G. Brezeanu, F. Draghici, F. Craciunoiu
{"title":"Temperature behavior of 4H-SIC MOS capacitor used as a gas sensor","authors":"R. Pascu, G. Pristavu, M. Badila, G. Brezeanu, F. Draghici, F. Craciunoiu","doi":"10.1109/SMICND.2014.6966430","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966430","url":null,"abstract":"Temperature behavior of 4H-SiC MOS capacitor is investigated. A new layout with several active MOS structures is proposed. Measured C-V characteristics show good thermal stability up to 300 C. The main electrical parameters of the MOS structure have been extracted by measurements on wafer and encapsulated samples.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"84 1","pages":"185-188"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77253111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Membrane supported circuits for millimeter wave applications 毫米波应用的膜支撑电路
2014 International Semiconductor Conference (CAS) Pub Date : 2014-12-01 DOI: 10.1109/SMICND.2014.6966422
D. Neculoiu, A. Bunea, A. Muller
{"title":"Membrane supported circuits for millimeter wave applications","authors":"D. Neculoiu, A. Bunea, A. Muller","doi":"10.1109/SMICND.2014.6966422","DOIUrl":"https://doi.org/10.1109/SMICND.2014.6966422","url":null,"abstract":"This paper presents a series of passive millimeter wave membrane supported circuits recently developed by the authors. Double folded slot antennas, band pass filters and band stop resonators are designed and fabricated by wet or dry etching of silicon. Flexible models are used for full-wave 3D electromagnetic simulations. The accuracy of the models is validated by measurement results. Membrane supported antennas with operating frequencies up to 220 GHz showed wide bandwidths with directivities of 6.5-7.5 dBi. The membrane supported band pass filters showed measured losses of 3.7 dB in the W band, while the band stop resonator has a measured rejection loss of - 30 dB at 30 GHz.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"21 1","pages":"157-162"},"PeriodicalIF":0.0,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86944975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信