用作气体传感器的4H-SIC MOS电容器的温度行为

2014 International Semiconductor Conference (CAS) Pub Date : 2014-12-01 DOI:10.1109/SMICND.2014.6966430

R. Pascu, G. Pristavu, M. Badila, G. Brezeanu, F. Draghici, F. Craciunoiu

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引用次数: 9

摘要

研究了4H-SiC MOS电容器的温度行为。提出了一种由多个有源MOS结构组成的新型布局。通过对晶片和封装样品的测量，获得了MOS结构的主要电学参数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Temperature behavior of 4H-SIC MOS capacitor used as a gas sensor

Temperature behavior of 4H-SiC MOS capacitor is investigated. A new layout with several active MOS structures is proposed. Measured C-V characteristics show good thermal stability up to 300 C. The main electrical parameters of the MOS structure have been extracted by measurements on wafer and encapsulated samples.

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来源期刊

2014 International Semiconductor Conference (CAS)

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