H. Achour, B. Crețu, J. Routoure, R. Carin, A. Benfdila, E. Simoen, C. Claeys
{"title":"低温下SOI衬底p沟道finfet饱和工作性能","authors":"H. Achour, B. Crețu, J. Routoure, R. Carin, A. Benfdila, E. Simoen, C. Claeys","doi":"10.1109/smicnd.2014.6966429","DOIUrl":null,"url":null,"abstract":"The impact of cryogenic temperature operation on the short channel effects and analog performances was analysed on strained and unstrained p-channel SOI FinFETs. The main electrical parameters extracted from the saturation mode of operation are investigated and compared to those found at room temperature. Low frequency noise measurements at 10 K operation show that the carrier number fluctuations dominate the flicker noise in moderate inversion, while the access resistance noise contributions prevail in strong inversion.","PeriodicalId":6616,"journal":{"name":"2014 International Semiconductor Conference (CAS)","volume":"11 1","pages":"181-184"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Performances under saturation operation of p-channel FinFETs on SOI substrates at cryogenic temperature\",\"authors\":\"H. Achour, B. Crețu, J. Routoure, R. Carin, A. Benfdila, E. Simoen, C. Claeys\",\"doi\":\"10.1109/smicnd.2014.6966429\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The impact of cryogenic temperature operation on the short channel effects and analog performances was analysed on strained and unstrained p-channel SOI FinFETs. The main electrical parameters extracted from the saturation mode of operation are investigated and compared to those found at room temperature. Low frequency noise measurements at 10 K operation show that the carrier number fluctuations dominate the flicker noise in moderate inversion, while the access resistance noise contributions prevail in strong inversion.\",\"PeriodicalId\":6616,\"journal\":{\"name\":\"2014 International Semiconductor Conference (CAS)\",\"volume\":\"11 1\",\"pages\":\"181-184\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 International Semiconductor Conference (CAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/smicnd.2014.6966429\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/smicnd.2014.6966429","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Performances under saturation operation of p-channel FinFETs on SOI substrates at cryogenic temperature
The impact of cryogenic temperature operation on the short channel effects and analog performances was analysed on strained and unstrained p-channel SOI FinFETs. The main electrical parameters extracted from the saturation mode of operation are investigated and compared to those found at room temperature. Low frequency noise measurements at 10 K operation show that the carrier number fluctuations dominate the flicker noise in moderate inversion, while the access resistance noise contributions prevail in strong inversion.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
