发布求助
文献互助 智能选刊 最新文献

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)最新文献

筛选
英文 中文
Effects of sheet resistance on selective emitter solar cells by laser direct doping 激光直接掺杂对选择性发射极太阳能电池片阻的影响
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7750086
Yu-Hsuan Lin, Sung-Yu Chen, C. Du, Sin-Han Yu, O. F. Adurodija, Hung-Yi Chang
{"title":"Effects of sheet resistance on selective emitter solar cells by laser direct doping","authors":"Yu-Hsuan Lin, Sung-Yu Chen, C. Du, Sin-Han Yu, O. F. Adurodija, Hung-Yi Chang","doi":"10.1109/PVSC.2016.7750086","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750086","url":null,"abstract":"This article investigates the effects of sheet resistance on a selective emitter (SE) solar cell fabricated using a simple laser doping process (LD). In order to demonstrate the influence of lightly doped emitter we divided cells for three groups for POCl3 diffusion with sheet resistance of 100 Ω/sq (SE-1), 120 Ω/sq (SE-2) and 140 Ω/sq (SE-3). After laser doping, the sheet resistance is ~60 Ω/sq for silver electrode contact. The optimal cell with sheet resistance values of 60/120Ω/sq showed the best efficiency (η) of 20.11 %, open circuit of 650 mV.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"49 1","pages":"2464-2466"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74243229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Time-resolved photoluminescence spectroscopy of CdTe/CdS/CdSe quantum dot complexes for photon upconversion 光子上转换的CdTe/CdS/CdSe量子点配合物的时间分辨光致发光光谱
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7749568
Eric Y. Chen, Diane G. Sellers, M. Doty
{"title":"Time-resolved photoluminescence spectroscopy of CdTe/CdS/CdSe quantum dot complexes for photon upconversion","authors":"Eric Y. Chen, Diane G. Sellers, M. Doty","doi":"10.1109/PVSC.2016.7749568","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749568","url":null,"abstract":"Solution-processed core/multi-shell semiconductor quantum dots (QDs) could be tailored to facilitate the carrier separation and recombination mechanisms necessary to implement photon upconversion. We have synthesized CdTe cores capped with CdS and then CdSe shells. We present steady-state and time-resolved photoluminescence (PL) spectroscopy measurements of these QDs as a function of varying shell thicknesses. We quantify and report carrier emission energies and lifetimes as a function of shell addition and shell thicknesses. The results provide a framework for understanding how CdS and CdSe shells affect carrier separation and recombination dynamics, and thus inform the design of core/multi-shell QDs for efficient photon upconversion.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"26 1","pages":"0155-0159"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72715802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Augmentation of optoelectronic properties via P3HT doping for low temperature processed perovskite solar cell P3HT掺杂增强低温钙钛矿太阳能电池光电性能
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7749903
M. Mahmud, N. Elumalai, M. B. Upama, Dian Wang, M. Wright, K. Chan, Cheng Xu, A. Uddin
{"title":"Augmentation of optoelectronic properties via P3HT doping for low temperature processed perovskite solar cell","authors":"M. Mahmud, N. Elumalai, M. B. Upama, Dian Wang, M. Wright, K. Chan, Cheng Xu, A. Uddin","doi":"10.1109/PVSC.2016.7749903","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749903","url":null,"abstract":"Methyl Ammonium Lead Halide Perovskite solar have shown immense potential to be a “Game Changer” in the photovoltaic industry. Major barriers to commercialization of Perovskite solar cells are poor device stability and high temperature requirement with TiO2 electron transport layer, widely used in efficient Perovskite devices. Apart from severe moisture sensitivity and thermal degradation, Perovskite layer can be decomposed due to the TBP additive incorporation with Li-TFSI dopant in most commonly used hole transport layers like Spiro OMeTAD and P3HT. Nearly 5000 C sintering temperature requirement for Titania electron transport layer also impedes the Perovskite manufacturing in roll-to-roll process on flexible substrate which has a stringent processing condition of sub 1500 C temperature. In this work, we have introduced F4TCNQ dopant to replace TBP and Li-TFSI in P3HT HTL in a low temperature (<;1500 C) solgel ZnO ETL processed Methyl Ammonium Lead Triiodide Perovskite solar cell. F4TCNQ doped P3HT HTL devices have shown over two times higher power conversion efficiency compared to pristine P3HT HTL devices. To comprehend the performance enhancement with F4TCNQ dopant in P3HT, we have examined the optical and electronic properties of both the pristine and F4TCNQ doped P3HT devices. Absorbance of Perovskite film lying underneath the undoped and the F4TCNQ doped P3HT film has been investigated to understand superior optical property of F4TCNQ incorporated film. Mott Schottky analysis has been conducted to enunciate the enhanced electronic property with F4TCNQ dopant in P3HT HTL compared to pristine P3HT.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"23 1","pages":"1653-1656"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74082725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of varying deposition and substrate temperature on sublimated CdTe thin-film photovoltaics 不同沉积和衬底温度对升华CdTe薄膜光伏的影响
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7749636
A. Munshi, J. Kephart, A. Abbas, T. Shimpi, K. Barth, J. Walls, W. Sampath
{"title":"Effect of varying deposition and substrate temperature on sublimated CdTe thin-film photovoltaics","authors":"A. Munshi, J. Kephart, A. Abbas, T. Shimpi, K. Barth, J. Walls, W. Sampath","doi":"10.1109/PVSC.2016.7749636","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749636","url":null,"abstract":"A standardized process used for fabrication of CdTe solar cells was varied by increasing the substrate temperature during CdTe layer nucleation from approximately 460°C to 610°C and by increasing the CdTe sublimation vapor source temperature. Higher substrate temperatures increase device efficiency, but cause significant CdS re-sublimation. This effect was eliminated by using a Mg1-xZnxO window layer that also has higher transparency. Elevated CdTe source temperatures were found to increase contamination in the deposition system but did not further improve device efficiency. The improvement using high substrate temperatures is attributed to larger CdTe grains and better crystalline quality. TEM cross section analysis, X-ray diffraction measurements and device results are presented.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"34 1","pages":"0465-0469"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85406078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Spectral correction for photovoltaic module performance based on air mass and precipitable water 基于空气质量和可降水量的光伏组件性能光谱校正
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7749836
Mitch Lee, A. Panchula
{"title":"Spectral correction for photovoltaic module performance based on air mass and precipitable water","authors":"Mitch Lee, A. Panchula","doi":"10.1109/PVSC.2016.7749836","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749836","url":null,"abstract":"A model is proposed for characterizing the effects of spectrum on cadmium telluride and crystalline silicon photovoltaic (PV) modules. It is of simple functional form, allowing it to be easily implemented into standard PV simulation tools. The model corrects for changes in spectrum due to air mass and precipitable water content. The model has module-specific coefficients based on the module's quantum efficiency curve. For modules with similar quantum efficiency curves, the same coefficients can be used. Field performance data of operational PV arrays is used to validate the model. Results illustrate an improvement when compared to existing simple spectral correction methods and suggest that the proposed spectral correction should be included in PV prediction software.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"14 1","pages":"1351-1356"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81993274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 28
MNFIS and other soft computing based MPPT techniques: A comparative analysis MNFIS和其他基于软计算的MPPT技术:比较分析
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7750266
Jesse Roberts, I. Bhattacharya
{"title":"MNFIS and other soft computing based MPPT techniques: A comparative analysis","authors":"Jesse Roberts, I. Bhattacharya","doi":"10.1109/PVSC.2016.7750266","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750266","url":null,"abstract":"Maximum Power Point Tracking (MPPT) is the process of searching the voltage space for the optimal power generation and tracking the optimum as it changes. This paper presents a performance analysis of soft computing algorithms applied to this endeavor and a deployment recommendation based on performance goals. Specifically, fuzzy logic (FL) and artificial neural networks (ANN) were tested with direct and indirect converter control and compared against multiple metrics for fitness. Along the way a novel algorithm was also developed, deemed the Modified Neuro-Fuzzy Inference System (MNFIS). This algorithm incorporates the strengths of both FL and ANN MPPT while mitigating the weaknesses of either.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"31 1","pages":"3247-3251"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79876686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Highly absorbing and high lifetime tapered silicon microwire arrays as an alternative for thin film crystalline silicon solar cells 高吸收和高寿命的锥形硅微线阵列作为薄膜晶体硅太阳能电池的替代品
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7750213
S. Yalamanchili, Hal S. Emmer, N. Lewis, H. Atwater
{"title":"Highly absorbing and high lifetime tapered silicon microwire arrays as an alternative for thin film crystalline silicon solar cells","authors":"S. Yalamanchili, Hal S. Emmer, N. Lewis, H. Atwater","doi":"10.1109/PVSC.2016.7750213","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750213","url":null,"abstract":"We report cryogenic inductively coupled plasma reactive ion etching (ICPRIE) etched tapered silicon microwires are ideal light trapping structures with extremely low (1.08% between 400 nm-1100 nm under normal incidence) reflectivity. We show that these tapered microwire arrays absorb 90.12% of incident light under normal incidence in an effectively 20 μm thick silicon when embedded in a polymer and peeled off the substrate, making them an attractive alternative for achieving high efficiency in thin film crystalline silicon solar cells. We show that microwave photoconductivity decay measurements as a simple quick way to measure carrier lifetimes in etched microwires under various liquid surface passivation techniques to estimate surface recombination velocities. The etched structures demonstrate >1 μs lifetimes.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"24 1","pages":"2999-3003"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81810554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Impact of alkali doping on carrier transport in Cu2ZnSn(S, Se)4 thin films for solar cell applications 碱掺杂对Cu2ZnSn(S, Se)4薄膜载流子输运的影响
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7749402
L. Phuong, John K. Katahara, G. Yamashita, Masaya Nagai, Masaaki Ashida, H. W. Hillhouse, Yoshihiko Kanemitsu
{"title":"Impact of alkali doping on carrier transport in Cu2ZnSn(S, Se)4 thin films for solar cell applications","authors":"L. Phuong, John K. Katahara, G. Yamashita, Masaya Nagai, Masaaki Ashida, H. W. Hillhouse, Yoshihiko Kanemitsu","doi":"10.1109/PVSC.2016.7749402","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749402","url":null,"abstract":"The effects of alkali doping (Na, Li, K) on the carrier transport in Cu2ZnSn(S, Se)4 (CZTSSe) thin films have been studied systematically using time-resolved THz spectroscopy. Na and Li doping seem to have no influence on the carrier mobility, whereas K doping leads to a noticeable decrease. In addition, we found that Na doping increases the lifetime of photocarriers, but Li and K doping do not. Consequently, we are able to evaluate the diffusion length of photocarriers as a function of the alkali dopants. This result provides a helpful orientation for future efforts to improve the performance of CZTSSe-based solar cells.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"86 6 1","pages":"0027-0030"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83230371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Specially designed solar cells for hybrid photovoltaic-thermal generators 专为混合光电热发电机设计的太阳能电池
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7750203
A. Mellor, I. Guarracino, L. Ferre Llin, D. Alonso-Álvarez, A. Riverola, S. Thoms, D. Paul, C. Markides, D. Chemisana, S. Maier, N. Ekins-Daukes
{"title":"Specially designed solar cells for hybrid photovoltaic-thermal generators","authors":"A. Mellor, I. Guarracino, L. Ferre Llin, D. Alonso-Álvarez, A. Riverola, S. Thoms, D. Paul, C. Markides, D. Chemisana, S. Maier, N. Ekins-Daukes","doi":"10.1109/PVSC.2016.7750203","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750203","url":null,"abstract":"The performance of hybrid photovoltaic-thermal systems can be improved using PV cells that are specially designed to generate both electricity and useful heat with maximum efficiency. Present systems, however, use standard PV cells that are only optimized for electrical performance. In this work, we have developed two cell-level components that will improve the thermal efficiency of PV-T collectors, with minimal loss of electrical efficiency. These are a spectrally-selective low-emissivity coating to reduce radiative thermal losses, and a nanotextured rear reflector to improve absorption of the near-infrared part of the solar spectrum for heat generation.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"4 1","pages":"2960-2963"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81200251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Intragranular defects in As-deposited and cadmium chloride-treated polycrystalline cadmium telluride solar cells 砷沉积和氯化镉处理多晶碲化镉太阳能电池的晶内缺陷
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI: 10.1109/PVSC.2016.7750295
T. Fiducia, A. Abbas, K. Barth, W. Sampath, M. Walls
{"title":"Intragranular defects in As-deposited and cadmium chloride-treated polycrystalline cadmium telluride solar cells","authors":"T. Fiducia, A. Abbas, K. Barth, W. Sampath, M. Walls","doi":"10.1109/PVSC.2016.7750295","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750295","url":null,"abstract":"Atomic-scale defects limit the open circuit Voltage, and the conversion efficiency of thin film polycrystalline cadmium telluride solar cells. Using state of the art aberration-corrected high resolution transmission electron microscopy, the type, density and atomic structure of intragranular defects present in cadmium chloride treated and untreated CdTe has been established. The cadmium chloride activation process dramatically reduces defect density but faults do remain. Characterizing the defects in both materials is an essential first step to determining their potential electrical effects, and to understanding how the cadmium chloride treatment reduces their density. Improving our knowledge of the mechanisms involved can lead to further process improvements.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"99 1","pages":"3386-3390"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80938423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信