2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)最新文献

A comparison between two MPC algorithms for demand charge reduction in a real-world microgrid system 两种MPC算法在实际微电网系统中降低需求费用的比较

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-11-21 DOI: 10.1109/PVSC.2016.7749947

Yun Xue, M. Todd, S. Ula, M. Barth, A. Martinez-Morales

引用次数: 13

Improving the radiation hardness of space solar cells via nanophotonic light trapping 利用纳米光子捕获技术提高空间太阳能电池的辐射硬度

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-11-21 DOI: 10.1109/PVSC.2016.7750298

A. Mellor, N. P. Hylton, C. Wellens, T. Thomas, Y. Al-Saleh, V. Giannini, A. Braun, H. Hauser, S. Maier, N. Ekins‐Daukes

引用次数: 1

Bandgap and carrier transport engineering of quantum confined mixed phase nanocrystalline/amorphous silicon 量子约束混合相纳米晶/非晶硅的带隙和载流子输运工程

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-11-21 DOI: 10.1109/PVSC.2016.7750158

T. Guan, Grant Klafehn, C. Kendrick, San Theingi, Idemudia Airuoyo, M. Lusk, P. Stradins, Craig J Taylor, R. Collins

{"title":"Bandgap and carrier transport engineering of quantum confined mixed phase nanocrystalline/amorphous silicon","authors":"T. Guan, Grant Klafehn, C. Kendrick, San Theingi, Idemudia Airuoyo, M. Lusk, P. Stradins, Craig J Taylor, R. Collins","doi":"10.1109/PVSC.2016.7750158","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750158","url":null,"abstract":"Mixed phase nanocrystalline/amorphous-silicon (nc/a-Si:H) thin films with band-gap higher than bulk silicon are prepared by depositing silicon nanoparticles (SiNPs), prepared in a separate deposition zone, and hydrogenated amorphous silicon (a-Si:H), simultaneously. Since the two deposition phases are well decoupled, optimized parameters for each component can apply to the growth process. Photoluminescence spectroscopy (PL) shows that the embedded SiNPs are small enough to exhibit quantum confinement effects. The low temperature PL measurements on the mixed phase reveal a dominant emission feature, which is associated with SiNPs surrounded by a-Si:H. In addition, we compare time dependent low temperature PL measurements for both a-Si:H and mixed phase material under intensive laser exposure for various times up to two hours. The PL intensity of a-Si:H with embedded SiNPs degrades much less than that of pure a-Si:H. We propose this improvement of photostability occurs because carriers generated in the a-Si:H matrix quickly transfer into SiNPs and recombine there instead of recombining in a-Si:H and creating defect states (Staebler-Wronski Effect).","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2016-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80502326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Boosting the efficiency of III-V/Si tandem solar cells 提高III-V/Si串联太阳能电池的效率

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-11-21 DOI: 10.1109/PVSC.2016.7749987

S. Essig, C. Allébe, J. Geisz, M. Steiner, B. Paviet‐Salomon, A. Descoeudres, A. Tamboli, L. Barraud, S. Ward, N. Badel, V. LaSalvia, J. Levrat, M. Despeisse, C. Ballif, P. Stradins, D. Young

引用次数: 5

Minority carrier electron traps in CZTSSe solar cells characterized by DLTS and DLOS 用DLTS和DLOS表征的CZTSSe太阳能电池中的少数载流子电子陷阱

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-11-21 DOI: 10.1109/PVSC.2016.7750024

V. Kheraj, E. Lund, A. E. Caruso, K. Al-Ajmi, D. Pruzan, C. Miskin, R. Agrawal, C. Beall, I. Repins, M. Scarpulla

{"title":"Minority carrier electron traps in CZTSSe solar cells characterized by DLTS and DLOS","authors":"V. Kheraj, E. Lund, A. E. Caruso, K. Al-Ajmi, D. Pruzan, C. Miskin, R. Agrawal, C. Beall, I. Repins, M. Scarpulla","doi":"10.1109/PVSC.2016.7750024","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750024","url":null,"abstract":"We report observations of minority carrier interactions with deep levels in 6-8% efficient Cu2ZnSn(S, Se)4 (CZTSSe) devices using conventional and minority deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS). Directly observing defect interactions with minority carriers is critical to understanding the recombination impact of deep levels. In devices with Cu2ZnSn(S, Se)4 nanoparticle ink absorber layers we identify a mid-gap state capturing and emitting minority electrons. It is 590±50 meV from the conduction band mobility edge, has a concentration near 1015/cm3, and has an apparent electron capture cross section ~10-14 cm2. We conclude that, while energetically positioned nearly-ideally to be a recombination center, these defects instead act as electron traps because of a smaller hole cross-section. In CZTSe devices produced using coevaporation, we used minority carrier DLTS on traditional samples as well as ones with transparent Ohmic back contacts. These experiments demonstrate methods for unambiguously probing minority carrier/defect interactions in solar cells in order to establish direct links between defect energy level observations and minority carrier lifetimes. Furthermore, we demonstrate the use of steady-state device simulation to aid in the interpretation of DLTS results e.g. to put bounds on the complimentary carrier cross section even in the absence its direct measurement. This combined experimental and theoretical approach establishes rigorous bounds on the impact on carrier lifetime and Voc of defects observed with DLTS as opposed to, for example, assuming that all deep states act as strong recombination centers.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2016-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89242932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing grain growth and boosting Voc in CZTSe absorber layers — Is Ge doping the answer? 促进晶粒生长和提高CZTSe吸收层中的Voc——Ge掺杂是答案吗?

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-11-21 DOI: 10.1109/PVSC.2016.7749574

M. Neuschitzer, S. Giraldo, J. Márquez, M. Dimitrievska, M. Placidi, I. Forbes, V. Izquierdo‐Roca, A. Pérez‐Rodríguez, E. Saucedo

引用次数: 4

Silicon surface passivation with atomic layer deposited aluminum nitride 硅表面钝化用原子层沉积氮化铝

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-11-18 DOI: 10.1109/PVSC.2016.7750205

Päivikki Repo, Yameng Bao, Heli Seppanen, Perttu Sippola, H. Savin

引用次数: 1

The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications 硅衬底上两步封闭空间升华生长AgGaTe2层及其在太阳能电池制造中的应用

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-11-18 DOI: 10.1109/PVSC.2016.7749649

A. Uruno, M. Kobayashi

引用次数: 0

Admittance spectroscopy in CZTSSe: Metastability behavior and voltage dependent defect study CZTSSe的导纳光谱:亚稳态行为和电压依赖性缺陷研究

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-11-18 DOI: 10.1109/PVSC.2016.7750025

Mark J. Koeper, C. Hages, Jian V. Li, D. Levi, R. Agrawal

引用次数: 1

Cl-doping in highly mismatched ZnTe1−xOx alloys for intermediate band solar cells 高失配ZnTe1−xOx合金中cl掺杂中间带太阳能电池

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-11-18 DOI: 10.1109/PVSC.2016.7750169

T. Tanaka, S. Tsutsumi, Y. Okano, K. Saito, Q. Guo, M. Nishio, K. Yu, W. Walukiewicz

引用次数: 1