The growth of AgGaTe2 layer on Si substrate by two-step closed space sublimation and its application to solar cell fabrications

Abstract

The AgGaTe₂ layer was formed on Ag₂Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga₂Te₃ source material into the Ag₂Te layer and formation of the AgGaTe₂ layer were both occurring during the growth when Ag₂Te and Ga₂Te₃ source mixture was used to form AgGaTe₂. It was also clear the AgGaTe₂ could be formed by deposition and annealing of Ga₂Te₃ layer on top of the Ag₂Te/Si structure. Solar cells were fabricated using the p-AgGaTe₂/n-Si heterojunction, and showed conversion efficiency of approximately 3%.