Effect of varying deposition and substrate temperature on sublimated CdTe thin-film photovoltaics

A. Munshi, J. Kephart, A. Abbas, T. Shimpi, K. Barth, J. Walls, W. Sampath
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引用次数: 8

Abstract

A standardized process used for fabrication of CdTe solar cells was varied by increasing the substrate temperature during CdTe layer nucleation from approximately 460°C to 610°C and by increasing the CdTe sublimation vapor source temperature. Higher substrate temperatures increase device efficiency, but cause significant CdS re-sublimation. This effect was eliminated by using a Mg1-xZnxO window layer that also has higher transparency. Elevated CdTe source temperatures were found to increase contamination in the deposition system but did not further improve device efficiency. The improvement using high substrate temperatures is attributed to larger CdTe grains and better crystalline quality. TEM cross section analysis, X-ray diffraction measurements and device results are presented.
不同沉积和衬底温度对升华CdTe薄膜光伏的影响
通过将CdTe层成核过程中的衬底温度从大约460°C提高到610°C和提高CdTe升华蒸汽源温度,可以改变用于制造CdTe太阳能电池的标准化工艺。较高的衬底温度可提高器件效率,但会引起显著的cd再升华。通过使用同样具有更高透明度的Mg1-xZnxO窗口层消除了这种影响。发现CdTe源温度升高会增加沉积系统中的污染,但不会进一步提高器件效率。使用高衬底温度的改进归因于更大的CdTe晶粒和更好的结晶质量。给出了TEM截面分析、x射线衍射测量和器件结果。
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