碱掺杂对Cu2ZnSn(S, Se)4薄膜载流子输运的影响

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI:10.1109/PVSC.2016.7749402

L. Phuong, John K. Katahara, G. Yamashita, Masaya Nagai, Masaaki Ashida, H. W. Hillhouse, Yoshihiko Kanemitsu

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引用次数: 2

摘要

采用时间分辨太赫兹光谱系统地研究了碱掺杂(Na, Li, K)对Cu2ZnSn(S, Se)4 (CZTSSe)薄膜载流子输运的影响。Na和Li掺杂对载流子迁移率似乎没有影响，而K掺杂导致载流子迁移率明显降低。此外，我们发现Na掺杂增加了光载流子的寿命，而Li和K掺杂则没有。因此，我们能够评估光载流子的扩散长度作为碱掺杂剂的函数。这一结果为今后提高基于cztse的太阳能电池的性能提供了有益的方向。

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Impact of alkali doping on carrier transport in Cu2ZnSn(S, Se)4 thin films for solar cell applications

The effects of alkali doping (Na, Li, K) on the carrier transport in Cu2ZnSn(S, Se)4 (CZTSSe) thin films have been studied systematically using time-resolved THz spectroscopy. Na and Li doping seem to have no influence on the carrier mobility, whereas K doping leads to a noticeable decrease. In addition, we found that Na doping increases the lifetime of photocarriers, but Li and K doping do not. Consequently, we are able to evaluate the diffusion length of photocarriers as a function of the alkali dopants. This result provides a helpful orientation for future efforts to improve the performance of CZTSSe-based solar cells.

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2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)

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