2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2最新文献

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Preparation of CuInSe2 thin films by post-deposition selenization of sputter deposited Cu-In-O multiple phase thin films 溅射沉积Cu-In-O多相薄膜沉积后硒化制备CuInSe2薄膜

2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2 Pub Date : 2012-06-03 DOI: 10.1109/PVSC-VOL2.2012.6750497

Emre Yassitepe, W. Shafarman, S. Shah

{"title":"Preparation of CuInSe2 thin films by post-deposition selenization of sputter deposited Cu-In-O multiple phase thin films","authors":"Emre Yassitepe, W. Shafarman, S. Shah","doi":"10.1109/PVSC-VOL2.2012.6750497","DOIUrl":"https://doi.org/10.1109/PVSC-VOL2.2012.6750497","url":null,"abstract":"Selenization of sputter deposited Cu-In-O films is investigated using two different sputtering targets. Sputter deposition parameters are varied to study the phase formation from Cu2In2O5 and Cu+In2O3 sputtering targets. XRD patterns of sputter deposited thin films from these targets showed different crystal orientation of the In2O3 phases deposited at 300°C and 500°C substrate temperatures. Films prepared by sputtering from Cu2In2O5 target are annealed under H2Se-Ar gas and the films prepared from Cu+In2O3 sputtering are annealed with Se under Ar-H2 gas. XRD results showed that the CuInSe2 phase is formed in all samples and a residual impurity phase In2O3 is identified for some of the films. Additionally, the results suggested that the selenization of Cu-In-O thin film revealed different effects when In2O3 phase is oriented. Additional layers are deposited for solar cell device and the device performances are investigated.","PeriodicalId":6420,"journal":{"name":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89619596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The effect of cadmium chloride treatment on close spaced sublimated cadmium telluride thin film solar cells 氯化镉处理对紧密间隔升华碲化镉薄膜太阳能电池的影响

2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2 Pub Date : 2012-06-03 DOI: 10.1109/PVSC-VOL2.2012.6656778

A. Abbas, G. West, J. Bowers, P. Isherwood, P. Kamiński, B. Maniscalco, P. Rowley, J. Walls, K. Barricklow, W. Sampath, K. Barth

{"title":"The effect of cadmium chloride treatment on close spaced sublimated cadmium telluride thin film solar cells","authors":"A. Abbas, G. West, J. Bowers, P. Isherwood, P. Kamiński, B. Maniscalco, P. Rowley, J. Walls, K. Barricklow, W. Sampath, K. Barth","doi":"10.1109/PVSC-VOL2.2012.6656778","DOIUrl":"https://doi.org/10.1109/PVSC-VOL2.2012.6656778","url":null,"abstract":"The aim of this investigation is to apply advanced microstructural characterization techniques to study the effect of the cadmium chloride treatment on the physical properties of cadmium telluride solar cells deposited via close-spaced sublimation (CSS) and relate these to cell performance. A range of techniques have been used to observe the microstructural changes as well as the chemical changes before and after cadmium chloride treatment. Electrical measurements that link the device performance with the microstructural properties of the cells have also been undertaken. Transmission Electron Microscopy (TEM) has revealed high densities of stacking faults in the as-grown CdTe samples. Further, it has been observed that these stacking faults are removed during the cadmium chloride treatment. These observations show that the presence of chlorine plays an important role in the removal of these defects and the subsequent production of high efficiency thin film CdTe solar cells. Elemental analysis in the TEM indicates chlorine rich regions appearing at the CdTe/CdS interface as well as at grain boundaries after the treatment.","PeriodicalId":6420,"journal":{"name":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79892581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 64

Deposition of high-efficiency microcrystalline silicon solar cells using SiF4/H2/Ar mixtures 利用si4 /H2/Ar混合物沉积高效微晶硅太阳电池

2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2 Pub Date : 1900-01-01 DOI: 10.1109/pvsc-vol2.2012.6656750

J. Dornstetter, S. Kasouit, P. Roca i Cabarrocas

引用次数: 11

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