{"title":"Preparation of CuInSe2 thin films by post-deposition selenization of sputter deposited Cu-In-O multiple phase thin films","authors":"Emre Yassitepe, W. Shafarman, S. Shah","doi":"10.1109/PVSC-VOL2.2012.6750497","DOIUrl":null,"url":null,"abstract":"Selenization of sputter deposited Cu-In-O films is investigated using two different sputtering targets. Sputter deposition parameters are varied to study the phase formation from Cu<sub>2</sub>In<sub>2</sub>O<sub>5</sub> and Cu+In<sub>2</sub>O<sub>3</sub> sputtering targets. XRD patterns of sputter deposited thin films from these targets showed different crystal orientation of the In<sub>2</sub>O<sub>3</sub> phases deposited at 300°C and 500°C substrate temperatures. Films prepared by sputtering from Cu<sub>2</sub>In<sub>2</sub>O<sub>5</sub> target are annealed under H<sub>2</sub>Se-Ar gas and the films prepared from Cu+In<sub>2</sub>O<sub>3</sub> sputtering are annealed with Se under Ar-H<sub>2</sub> gas. XRD results showed that the CuInSe<sub>2</sub> phase is formed in all samples and a residual impurity phase In<sub>2</sub>O<sub>3</sub> is identified for some of the films. Additionally, the results suggested that the selenization of Cu-In-O thin film revealed different effects when In<sub>2</sub>O<sub>3</sub> phase is oriented. Additional layers are deposited for solar cell device and the device performances are investigated.","PeriodicalId":6420,"journal":{"name":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC-VOL2.2012.6750497","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Selenization of sputter deposited Cu-In-O films is investigated using two different sputtering targets. Sputter deposition parameters are varied to study the phase formation from Cu2In2O5 and Cu+In2O3 sputtering targets. XRD patterns of sputter deposited thin films from these targets showed different crystal orientation of the In2O3 phases deposited at 300°C and 500°C substrate temperatures. Films prepared by sputtering from Cu2In2O5 target are annealed under H2Se-Ar gas and the films prepared from Cu+In2O3 sputtering are annealed with Se under Ar-H2 gas. XRD results showed that the CuInSe2 phase is formed in all samples and a residual impurity phase In2O3 is identified for some of the films. Additionally, the results suggested that the selenization of Cu-In-O thin film revealed different effects when In2O3 phase is oriented. Additional layers are deposited for solar cell device and the device performances are investigated.