溅射沉积Cu-In-O多相薄膜沉积后硒化制备CuInSe2薄膜

Emre Yassitepe, W. Shafarman, S. Shah
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引用次数: 0

摘要

采用两种不同的溅射靶,研究了Cu-In-O薄膜的硒化过程。改变溅射沉积参数,研究Cu2In2O5和Cu+In2O3溅射靶相的形成。在300°C和500°C衬底温度下,溅射沉积薄膜的XRD图谱显示出不同的In2O3相取向。将Cu2In2O5溅射制备的薄膜在H2Se-Ar气体下退火,将Cu+In2O3溅射制备的薄膜在Ar-H2气体下用Se退火。XRD结果表明,所有样品中均形成了CuInSe2相,部分薄膜中还残留有杂质相In2O3。此外,结果表明,当In2O3相取向时,Cu-In-O薄膜的硒化效果不同。为太阳能电池器件沉积了附加层,并对器件的性能进行了研究。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Preparation of CuInSe2 thin films by post-deposition selenization of sputter deposited Cu-In-O multiple phase thin films
Selenization of sputter deposited Cu-In-O films is investigated using two different sputtering targets. Sputter deposition parameters are varied to study the phase formation from Cu2In2O5 and Cu+In2O3 sputtering targets. XRD patterns of sputter deposited thin films from these targets showed different crystal orientation of the In2O3 phases deposited at 300°C and 500°C substrate temperatures. Films prepared by sputtering from Cu2In2O5 target are annealed under H2Se-Ar gas and the films prepared from Cu+In2O3 sputtering are annealed with Se under Ar-H2 gas. XRD results showed that the CuInSe2 phase is formed in all samples and a residual impurity phase In2O3 is identified for some of the films. Additionally, the results suggested that the selenization of Cu-In-O thin film revealed different effects when In2O3 phase is oriented. Additional layers are deposited for solar cell device and the device performances are investigated.
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