The effect of cadmium chloride treatment on close spaced sublimated cadmium telluride thin film solar cells

2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2 Pub Date : 2012-06-03 DOI:10.1109/PVSC-VOL2.2012.6656778

A. Abbas, G. West, J. Bowers, P. Isherwood, P. Kamiński, B. Maniscalco, P. Rowley, J. Walls, K. Barricklow, W. Sampath, K. Barth

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引用次数: 64

Abstract

The aim of this investigation is to apply advanced microstructural characterization techniques to study the effect of the cadmium chloride treatment on the physical properties of cadmium telluride solar cells deposited via close-spaced sublimation (CSS) and relate these to cell performance. A range of techniques have been used to observe the microstructural changes as well as the chemical changes before and after cadmium chloride treatment. Electrical measurements that link the device performance with the microstructural properties of the cells have also been undertaken. Transmission Electron Microscopy (TEM) has revealed high densities of stacking faults in the as-grown CdTe samples. Further, it has been observed that these stacking faults are removed during the cadmium chloride treatment. These observations show that the presence of chlorine plays an important role in the removal of these defects and the subsequent production of high efficiency thin film CdTe solar cells. Elemental analysis in the TEM indicates chlorine rich regions appearing at the CdTe/CdS interface as well as at grain boundaries after the treatment.

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氯化镉处理对紧密间隔升华碲化镉薄膜太阳能电池的影响

本研究的目的是应用先进的微观结构表征技术，研究氯化镉处理对近距离升华沉积的碲化镉太阳能电池物理性能的影响，并将其与电池性能联系起来。采用多种技术观察了氯化镉处理前后的显微组织变化和化学变化。还进行了将器件性能与细胞的微观结构特性联系起来的电气测量。透射电子显微镜(TEM)显示在生长的CdTe样品中存在高密度的层错。此外，还观察到这些层错在氯化镉处理过程中被消除。这些观察结果表明，氯的存在在去除这些缺陷和随后生产高效薄膜碲化镉太阳能电池中起着重要作用。TEM元素分析表明，处理后在CdTe/CdS界面和晶界处出现富氯区。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2

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