2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)最新文献_第7页

Conduction processes in Cu/low-K interconnection Cu/低钾互连中的传导过程

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI: 10.1109/RELPHY.2000.843937

G. Bersuker, V. Blaschke, S. Choi, D. Wick

引用次数: 10

Leakage and breakdown reliability issues associated with low-k dielectrics in a dual-damascene Cu process 泄漏和击穿可靠性问题与低k介电介质在双大马士革铜工艺

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI: 10.1109/RELPHY.2000.843938

R. Tsu, J. McPherson, W. Mckee

引用次数: 72

Reliability of optical fiber Bragg grating sensors at elevated temperature 高温下光纤Bragg光栅传感器的可靠性

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI: 10.1109/RELPHY.2000.843925

U. Sennhauser, A. Frank, P. Mauron, P. Nellen

引用次数: 9

Failure analysis and stress simulation in small multichip BGAs 小型多芯片BGAs的失效分析与应力模拟

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI: 10.1109/RELPHY.2000.843918

T. Moore, J. Jarvis

{"title":"Failure analysis and stress simulation in small multichip BGAs","authors":"T. Moore, J. Jarvis","doi":"10.1109/RELPHY.2000.843918","DOIUrl":"https://doi.org/10.1109/RELPHY.2000.843918","url":null,"abstract":"This paper examines one of the common modes of structural failure in multichip BGAs, determines its locations within the package structure, relates it to the stresses generated in the reliability tests under which it occurs, and by Finite Element simulations, determines an explanation for the failure, and finally proposes a method to avoid this failure mechanism. Several designs of multichip BGA substrates were manufactured and production silicon assembled into them. These were all 14/spl times/22 mm 119 ball PBGA. These were subjected to a set of package reliability tests, until some units failed electrical test. The failed units were analysed and the physical location and shape of the failure was determined in many cases. From this information, the mechanical mode of failure for each unit was determined. In addition there was sufficient information in some of the analyses to provide definite suggestions as to the mechanism of failure. Meanwhile, Finite Element Analysis was performed using simplified representations of the multichip BGAs, in order to find the locations of highest stress, and the expected modes of failure. This data was matched to the failure modes found in the physical analysis. Some novel failure analysis techniques were used to expose the damage in the failed units. A particular failure mode occurred frequently in temperature cycle, and the sites of failure were located by failure analysis. The failure was due to open circuit in the copper tracks in the top layer of the substrate caused by cracking in the solder resist directly underneath the edge of the die attach fillet. Finite element analysis was carried out and the location of the actual failures was found to be a local zone of high tensile stress in the solder resist.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77856836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 33

Short and long-term stability problems of Hall plates in plastic packages 塑料包装中霍尔板的短期和长期稳定性问题

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI: 10.1109/RELPHY.2000.843919

D. Manic, J. Petr, R. Popovic

引用次数: 26

Investigation of ultra-thin gate oxide reliability behavior by separate characterization of soft breakdown and hard breakdown 通过软击穿和硬击穿的分离表征研究超薄栅极氧化物的可靠性行为

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-04-10 DOI: 10.1109/RELPHY.2000.843889

T. Pompl, H. Wurzer, M. Kerber, I. Eisele

引用次数: 37

Effect of W coating on microengine performance W涂层对微发动机性能的影响

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-03-01 DOI: 10.1109/RELPHY.2000.843905

S. Mani, J. Fleming, J. Walraven, J. Sniegowski, M.P. se Beer, L. W. Irwin, D. M. Tanner, D. Laván, M. Dugger, J. Jakubczak, W. M. Miller

{"title":"Effect of W coating on microengine performance","authors":"S. Mani, J. Fleming, J. Walraven, J. Sniegowski, M.P. se Beer, L. W. Irwin, D. M. Tanner, D. Laván, M. Dugger, J. Jakubczak, W. M. Miller","doi":"10.1109/RELPHY.2000.843905","DOIUrl":"https://doi.org/10.1109/RELPHY.2000.843905","url":null,"abstract":"Two major problems associated with Si-based MEMS (MicroElectroMechanical Systems) devices are stiction and wear. Surface modifications are needed to reduce both adhesion and friction in micromechanical structures to solve these problems. In this paper, we will present a CVD (Chemical Vapor Deposition) process that selectively coats MEMS devices with tungsten and significantly enhances device durability. Tungsten CVD is used in the integrated-circuit industry, which makes this approach manufacturable. This selective deposition process results in a very conformal coating and can potentially address both stiction and wear problems confronting MEMS processing. The selective deposition of tungsten is accomplished through the silicon reduction of WF/sub 6/. The self-limiting nature of the process ensures consistent process control. The tungsten is deposited after the removal of the sacrificial oxides to minimize stress and process integration problems. The tungsten coating adheres well and is hard and conducting, which enhances performance for numerous devices. Furthermore, since the deposited tungsten infiltrates under adhered silicon parts and the volume of W deposited is less than the amount of Si consumed, it appears to be possible to release adhered parts that are contacted over small areas such as dimples. The wear resistance of tungsten coated parts has been shown to be significantly improved by microengine test structures.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86330944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 21

MEMS reliability in shock environments 冲击环境下MEMS的可靠性

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-02-09 DOI: 10.1109/RELPHY.2000.843903

D. M. Tanner, J. Walraven, K. Helgesen, L. W. Irwin, F. Brown, N. F. Smith, Nathan Masters Sandia

{"title":"MEMS reliability in shock environments","authors":"D. M. Tanner, J. Walraven, K. Helgesen, L. W. Irwin, F. Brown, N. F. Smith, Nathan Masters Sandia","doi":"10.1109/RELPHY.2000.843903","DOIUrl":"https://doi.org/10.1109/RELPHY.2000.843903","url":null,"abstract":"In order to determine the susceptibility of our MEMS (MicroElectroMechanical Systems) devices to shock, tests were performed using haversine shock pulses with widths of 1 to 0.2 ms in the range from 500 g to 40000 g. We chose a surface-micromachined microengine because it has all the components needed for evaluation: springs that flex, gears that are anchored, and clamps and spring stops to maintain alignment. The microengines, which were unpowered for the tests, performed quite well at most shock levels with a majority functioning after the impact. Debris from the die edges moved at levels greater than 4000 g causing shorts in the actuators and posing reliability concerns. The coupling agent used to prevent stiction in the MEMS release weakened the die-attach bond, which produced failures at 10000 g and above. At 20000 g we began to observe structural damage in some of the thin flexures and 2.5-micron diameter pin joints. We observed electrical failures caused by the movement of debris. Additionally, we observed a new failure mode where stationary comb fingers contact the ground plane resulting in electrical shorts. These new failures were observed in our control group indicating that they were not shock related.","PeriodicalId":6387,"journal":{"name":"2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2000-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77393239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 178

MEMS reliability in a vibration environment 振动环境下MEMS的可靠性

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-02-03 DOI: 10.1109/RELPHY.2000.843904

D. Tanner, J. Walraven, K. Helgesen, L. W. Irwin, D. Gregory, J. Stake, N. F. Smith

引用次数: 62

Temperature effect on the reliability of ZrO/sub 2/ gate dielectric deposited directly on silicon 温度对直接沉积在硅上的ZrO/sub - 2/栅极介质可靠性的影响

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-01-01 DOI: 10.1109/RELPHY.2000.843893

W. Qi, R. Nieh, K. Onishi, B. Lee, L. Kang, Y. Jeon, S. Gopalan, Jack C. Lee

引用次数: 5