Temperature effect on the reliability of ZrO/sub 2/ gate dielectric deposited directly on silicon

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059) Pub Date : 2000-01-01 DOI:10.1109/RELPHY.2000.843893

W. Qi, R. Nieh, K. Onishi, B. Lee, L. Kang, Y. Jeon, S. Gopalan, Jack C. Lee

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引用次数: 5

Abstract

Temperature effect on the reliability of ZrO/sub 2/ gate dielectric has been presented. High effective voltage-ramp breakdown field was observed. The activation energy of temperature accelerated voltage-ramp breakdown calculated from Arrhenius plot indicates that the breakdown of ZrO/sub 2/ is less sensitive to temperature than a thermal oxide of similar electrical thickness. ZrO/sub 2/ films exhibit excellent TDDB characteristics with low charge trapping and no stress induced leakage current. The field and temperature acceleration for TDDB for the 15.8 /spl Aring/ capacitance equivalent oxide thickness (CET) ZrO/sub 2/ shows that the activation energy for TDDB falls into the range reported for oxide from 39 /spl Aring/ to 150 /spl Aring/. It was found that the extrapolated 10-year lifetime operating voltage can be as high as -1.9 V, even at 150/spl deg/C based on the "log(t/sub BD/) vs E" extrapolation model for a film with a CET of 15.8 /spl Aring/.

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温度对直接沉积在硅上的ZrO/sub - 2/栅极介质可靠性的影响

研究了温度对ZrO/sub - 2/栅极介质可靠性的影响。观察到高有效电压斜坡击穿场。由Arrhenius图计算的温度加速电压斜坡击穿的活化能表明，ZrO/sub 2/击穿对温度的敏感性低于电厚度相近的热氧化物。ZrO/ sub2 /薄膜具有优异的TDDB特性，具有低电荷捕获和无应力引起的泄漏电流。TDDB在15.8 /spl /电容等效氧化物厚度(CET) ZrO/sub 2/时的场加速度和温度加速度表明，TDDB的活化能在39 /spl / ~ 150 /spl /之间。根据“log(t/sub BD/) vs E”外推模型，对于CET为15.8 /spl Aring/的薄膜，外推的10年寿命工作电压可以高达-1.9 V，甚至在150/spl℃。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059)

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