Conduction processes in Cu/low-K interconnection

Electrical characterization of Cu/low-k structures was performed to address intrinsic material properties. It was shown that ionic conduction due to contamination inherent to the dielectric was the leading cause of an intrinsic intra metal line leakage current at low temperatures, while at elevated temperatures a contribution from electron current was detected. Dielectric and barrier layer parameters that control the conduction process were evaluated.