2010 International Conference on Enabling Science and Nanotechnology (ESciNano)最新文献_第10页

High-mobility Ge nano-stripes for next generation Si-CMOS 下一代Si-CMOS的高迁移率锗纳米条纹

2010 International Conference on Enabling Science and Nanotechnology (ESciNano) Pub Date : 2010-12-01 DOI: 10.1109/ESCINANO.2010.5701082

T. Sadoh

引用次数: 0

Dependence of substrate orientation and etching conditions on the formation of Si nanowires 衬底取向和蚀刻条件对硅纳米线形成的影响

2010 International Conference on Enabling Science and Nanotechnology (ESciNano) Pub Date : 2010-12-01 DOI: 10.1109/ESCINANO.2010.5700956

Tan Lay Theng, H. Hui, C. Sheng, O. Soon, M. T. Sun, Wee Qixun, Soh Chew Beng, Chua Soo Jin

引用次数: 1

Crystallization of polycrystalline silicon thin film by excimer laser annealing, ELA 准分子激光退火制备多晶硅薄膜的研究

2010 International Conference on Enabling Science and Nanotechnology (ESciNano) Pub Date : 2010-12-01 DOI: 10.1109/ESCINANO.2010.5701062

S. N. Razak, N. Bidin

引用次数: 2

Ultra-violet sensing characteristic and field emission properties of vertically aligned aluminum doped zinc oxide nanorod arrays 垂直排列铝掺杂氧化锌纳米棒阵列的紫外传感特性及场发射特性

2010 International Conference on Enabling Science and Nanotechnology (ESciNano) Pub Date : 2010-12-01 DOI: 10.1063/1.3587035

M. H. Mamat, Z. Khusaimi, M. F. Malik, M. M. Zahidi, M. Mahmood

引用次数: 4

Detection and investigation of carbon ions induced by Nd:YAG laser using SSNTDs 利用SSNTDs检测Nd:YAG激光诱导的碳离子

2010 International Conference on Enabling Science and Nanotechnology (ESciNano) Pub Date : 2010-12-01 DOI: 10.1063/1.3586984

R. Qindeel, J. Ali, M. S. Hussain, K. Chaudhary

引用次数: 0

Nanostructured materials in advanced membrane technology for separation processes 纳米结构材料在先进膜技术分离过程中的应用

2010 International Conference on Enabling Science and Nanotechnology (ESciNano) Pub Date : 2010-12-01 DOI: 10.1109/ESCINANO.2010.5701087

A. Ismail

{"title":"Nanostructured materials in advanced membrane technology for separation processes","authors":"A. Ismail","doi":"10.1109/ESCINANO.2010.5701087","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5701087","url":null,"abstract":"Separation by selective transport through membranes is a dynamic and rapidly growing field. However, the existing of polymeric and inorganic membrane materials are inadequate in terms of sustaining the membrane performance for long term operation under high pressure and high concentration of impurities to be separated. These are some of the key issues to be addressed by scientist and engineers to fully exploit membrane technology in a broader perspective. Thus, to address the key issues, Mixed Matrix Membrane (MMM) has developed. MMM composed of homogeneously interpenetrating polymeric and inorganic particle matrices offers a viable and promising route that has been rapidly researched and is an attractive candidate for membrane-based separations processes. The combination of polymer and inorganic filler in MMM resulted in a synergistic effect in which the rigid adsorptive porous type inorganic phase provides superior separation properties, meanwhile the presence of flexible polymer enables the ideal membrane forming hence solving the problem of fragility inherent found in the inorganic membranes. In the fabrication of MMMs, the polymeric layer is normally tightly packed with nano-inorganic fillers such as zeolite, carbon molecular sieve as well as carbon nanotube to form a dense region of mixed matrix layer. These nanoporous materials possess the shape and size selective nature and hence allow molecular sieving discrimination by permitting smaller sized penetrates to diffuse at higher rate than that of larger sized. The practical utilization of MMMs for particular separation processes can only be achieved only if the intrinsic properties of the MMM is fully optimized. In this aspect, the selection of proper filler and adaption of modification to enhance the filler compatibility are crucial steps to be taken into consideration in order to facilitate and also bring a new insight into a wider application of MMMs.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87505934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Kinetic release of levodopa from Zn/Al-layered double hydroxide host 左旋多巴在Zn/ al层状双氧根基质中的动力学释放

2010 International Conference on Enabling Science and Nanotechnology (ESciNano) Pub Date : 2010-12-01 DOI: 10.1109/ESCINANO.2010.5700963

M. Zobir Hussein, S. Abdul Ghani, A. Abdullah

引用次数: 0

Effects of various metal contacts on contact resistance and barrier height of metal/graphene interface 不同金属触点对金属/石墨烯界面接触电阻和势垒高度的影响

2010 International Conference on Enabling Science and Nanotechnology (ESciNano) Pub Date : 2010-12-01 DOI: 10.1109/ESCINANO.2010.5700995

S. F. Abd Rahman, Nihad K. Ali Al-Obaidi, A. M. Hashim

引用次数: 0

Nanosensors for ubiquitous network 纳米传感器无处不在的网络

2010 International Conference on Enabling Science and Nanotechnology (ESciNano) Pub Date : 2010-12-01 DOI: 10.1109/ESCINANO.2010.5701089

M. Othman

引用次数: 0

Heteroepitaxial growth of SiC at low temperatures for the application of a pressure sensor using hot-mesh CVD 低温异质外延生长SiC用于热网CVD压力传感器的研究

2010 International Conference on Enabling Science and Nanotechnology (ESciNano) Pub Date : 2010-12-01 DOI: 10.1109/ESCINANO.2010.5701025

K. Yasui, H. Miura, Jyunpei Eto, Y. Narita, A. M. Hashim

{"title":"Heteroepitaxial growth of SiC at low temperatures for the application of a pressure sensor using hot-mesh CVD","authors":"K. Yasui, H. Miura, Jyunpei Eto, Y. Narita, A. M. Hashim","doi":"10.1109/ESCINANO.2010.5701025","DOIUrl":"https://doi.org/10.1109/ESCINANO.2010.5701025","url":null,"abstract":"Silicon carbide (SiC) is a wide bandgap semiconductor and it exhibits excellent electronic and chemical properties. Fabrication of SiC devices on Si wafers of large diameter is desired to reduce their production cost. For the fabrication of electronic devices in the SiC layer, however, an electronic isolation between SiC and Si substrate is required because of the leakage current between the SiC and the substrate. Therefore the application of the SOI (Si on insulator) technique to the SiC on insulator (SiCOI) structure has been eagerly investigated [1, 2]. SiCOI structure has been investigated for the applications of piezo-resistive sensors and micro electromechanical systems (MEMS) operating at physically and chemically harsh environments [3]. SiC growth on SOI substrates, however, is very difficult owing to thermal instability of the thin top-Si layer. During the thermal annealing of SOI substrates at the substrate temperature lower than 1000°C depending on the top Si layer thickness, Si atoms agglomerate and the Si islands and voids would be formed [4, 5]. Because outdiffusion of the Si atoms into SiC layer is induced in the case of the SiC growth on Si layer, void formation takes place at lower temperatures than that in the case of the thermal annealing. The SiC growth at much lower temperature than 1000°C, therefore, is required. In our previous study, 3C-SiC epitaxial films were grown at 750°C by hot-mesh CVD, a kind of hot-wire CVD which utilizes the catalytic decomposition of source gases by heated tungsten (W) wires with a mesh structure [6], using monomethylsilane (MMS) as a source gas. In this paper, the epitaxial growth of 3C-SiC films on SOI substrates was investigated by the hot-mesh CVD method. And their piezoresistive property was measured for the application of a pressure sensor.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84606721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0