K. Yasui, H. Miura, Jyunpei Eto, Y. Narita, A. M. Hashim
{"title":"Heteroepitaxial growth of SiC at low temperatures for the application of a pressure sensor using hot-mesh CVD","authors":"K. Yasui, H. Miura, Jyunpei Eto, Y. Narita, A. M. Hashim","doi":"10.1109/ESCINANO.2010.5701025","DOIUrl":null,"url":null,"abstract":"Silicon carbide (SiC) is a wide bandgap semiconductor and it exhibits excellent electronic and chemical properties. Fabrication of SiC devices on Si wafers of large diameter is desired to reduce their production cost. For the fabrication of electronic devices in the SiC layer, however, an electronic isolation between SiC and Si substrate is required because of the leakage current between the SiC and the substrate. Therefore the application of the SOI (Si on insulator) technique to the SiC on insulator (SiCOI) structure has been eagerly investigated [1, 2]. SiCOI structure has been investigated for the applications of piezo-resistive sensors and micro electromechanical systems (MEMS) operating at physically and chemically harsh environments [3]. SiC growth on SOI substrates, however, is very difficult owing to thermal instability of the thin top-Si layer. During the thermal annealing of SOI substrates at the substrate temperature lower than 1000°C depending on the top Si layer thickness, Si atoms agglomerate and the Si islands and voids would be formed [4, 5]. Because outdiffusion of the Si atoms into SiC layer is induced in the case of the SiC growth on Si layer, void formation takes place at lower temperatures than that in the case of the thermal annealing. The SiC growth at much lower temperature than 1000°C, therefore, is required. In our previous study, 3C-SiC epitaxial films were grown at 750°C by hot-mesh CVD, a kind of hot-wire CVD which utilizes the catalytic decomposition of source gases by heated tungsten (W) wires with a mesh structure [6], using monomethylsilane (MMS) as a source gas. In this paper, the epitaxial growth of 3C-SiC films on SOI substrates was investigated by the hot-mesh CVD method. And their piezoresistive property was measured for the application of a pressure sensor.","PeriodicalId":6354,"journal":{"name":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2010-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 International Conference on Enabling Science and Nanotechnology (ESciNano)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESCINANO.2010.5701025","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Silicon carbide (SiC) is a wide bandgap semiconductor and it exhibits excellent electronic and chemical properties. Fabrication of SiC devices on Si wafers of large diameter is desired to reduce their production cost. For the fabrication of electronic devices in the SiC layer, however, an electronic isolation between SiC and Si substrate is required because of the leakage current between the SiC and the substrate. Therefore the application of the SOI (Si on insulator) technique to the SiC on insulator (SiCOI) structure has been eagerly investigated [1, 2]. SiCOI structure has been investigated for the applications of piezo-resistive sensors and micro electromechanical systems (MEMS) operating at physically and chemically harsh environments [3]. SiC growth on SOI substrates, however, is very difficult owing to thermal instability of the thin top-Si layer. During the thermal annealing of SOI substrates at the substrate temperature lower than 1000°C depending on the top Si layer thickness, Si atoms agglomerate and the Si islands and voids would be formed [4, 5]. Because outdiffusion of the Si atoms into SiC layer is induced in the case of the SiC growth on Si layer, void formation takes place at lower temperatures than that in the case of the thermal annealing. The SiC growth at much lower temperature than 1000°C, therefore, is required. In our previous study, 3C-SiC epitaxial films were grown at 750°C by hot-mesh CVD, a kind of hot-wire CVD which utilizes the catalytic decomposition of source gases by heated tungsten (W) wires with a mesh structure [6], using monomethylsilane (MMS) as a source gas. In this paper, the epitaxial growth of 3C-SiC films on SOI substrates was investigated by the hot-mesh CVD method. And their piezoresistive property was measured for the application of a pressure sensor.
碳化硅(SiC)是一种宽禁带半导体,具有优异的电子和化学性能。为了降低SiC器件的生产成本,需要在大直径的硅片上制造SiC器件。然而,对于在SiC层中制造电子器件,由于SiC和衬底之间的漏电流,需要在SiC和Si衬底之间进行电子隔离。因此,将SOI (Si on insulator)技术应用于SiC on insulator (SiCOI)结构已成为研究热点[1,2]。SiCOI结构已被研究用于在物理和化学恶劣环境下工作的压阻传感器和微机电系统(MEMS)的应用[3]。然而,由于薄的顶部硅层的热不稳定性,SiC在SOI衬底上生长非常困难。在低于1000℃的衬底温度下,根据顶部Si层厚度的不同,SOI衬底的热退火过程中,Si原子聚集,形成Si岛和Si空洞[4,5]。由于SiC在Si层上生长导致Si原子向SiC层外扩散,因此在较低的温度下形成空洞。因此,需要在远低于1000°C的温度下生长SiC。在我们之前的研究中,我们使用热网CVD在750℃下生长了3C-SiC外延膜。热网CVD是一种利用加热网状结构的钨丝催化分解源气体的热丝CVD[6],以单甲基硅烷(MMS)为源气体。本文采用热网CVD法研究了SOI衬底上3C-SiC薄膜的外延生长。并对其压阻性能进行了测试,以供压力传感器使用。