下一代Si-CMOS的高迁移率锗纳米条纹

2010 International Conference on Enabling Science and Nanotechnology (ESciNano) Pub Date : 2010-12-01 DOI:10.1109/ESCINANO.2010.5701082

T. Sadoh

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引用次数: 0

摘要

为了克服晶体管性能的尺度限制，迫切需要研究和开发能够实现超高速运行和超低功耗的新型半导体器件。因此，硅基异质结构技术得到了广泛的发展。近年来，我们开发了SiGe混合触发的液相外延(LPE)。这在绝缘衬底上实现了高迁移率的Ge单晶[1]。本文综述了这种新型生长技术的最新进展。

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High-mobility Ge nano-stripes for next generation Si-CMOS

Research and development for new semiconductor devices which enable ultrahigh speed operation and ultralow power dissipation are strongly required to overcome the scaling limit of the transistor performance. In line with this, Si-based heterostructure technologies have been widely developed. Recently, we have developed SiGe mixing triggered liquid-phase epitaxy (LPE). This achieves high-mobility Ge single crystals on insulating substrates [1]. The present paper reviews our recent progress in this novel growth technique.

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2010 International Conference on Enabling Science and Nanotechnology (ESciNano)

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