Ultra-violet sensing characteristic and field emission properties of vertically aligned aluminum doped zinc oxide nanorod arrays

Abstract

Vertically aligned Zinc oxide (ZnO) nanostructures become very important and useful materials in nanodevices fabrications due to its outstanding characteristics such as high aspect ratio, high electron mobility and large surface area availability [1,2]. ZnO is categorized to II–VI group compound semiconductor with band gap energy 3.2∼3.3 eV and exciton binding energy of 60 meV. It is wide band gap energy material with hexagonal wurtzite structure (lattice parameter: a = 0.3296 nm and c = 0.52065 nm) which is non-toxic, radiation resisted and abundant. Recently, various kind of ZnO nanostructures growth has been reported including nanorod, nanotube and nanobelt [3–5].