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2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)最新文献

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Diagram of the magnetic state of real fine particle system of Ca0.5Ba0.5Fe12O19 Ca0.5Ba0.5Fe12O19真实细颗粒体系的磁态图
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464767
K. Mozul’, L. Ol’khovik, Z. Sizova, O. Shurinova
{"title":"Diagram of the magnetic state of real fine particle system of Ca0.5Ba0.5Fe12O19","authors":"K. Mozul’, L. Ol’khovik, Z. Sizova, O. Shurinova","doi":"10.1109/OMEE.2012.6464767","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464767","url":null,"abstract":"A magnetic state of real system of biocompatible particles Ca<inf>0.5</inf>Ba<inf>0.5</inf>Fe<inf>12</inf>O<inf>19</inf> with a quite wide size distribution within the single domain limit was studied in this paper.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"37 1","pages":"278-279"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84530655","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural properties and incommensurate magnetic order in BiFeO3-PbTiO3 solid solutions BiFeO3-PbTiO3固溶体的结构性质和不相称磁序
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464827
A. Senyshyn, R. Ranjan, V. Kothai, A. Daoud-Aladine
{"title":"Structural properties and incommensurate magnetic order in BiFeO3-PbTiO3 solid solutions","authors":"A. Senyshyn, R. Ranjan, V. Kothai, A. Daoud-Aladine","doi":"10.1109/OMEE.2012.6464827","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464827","url":null,"abstract":"The perovskite BiFeO3 has received considerable attention over decades due to its unique combination of ferroelectric and magnetic properties at room temperature. Recently it has been reported that linear magnetoelectric coupling in BiFeO3 can be realized by artificially introduced disorder like in solid solutions, where PbTiO3 substitution causes an antiferromagnetic (AFM) M-H loop. Details of the magnetic and structural order obtained by joint studies using monochromatic high-resolution neutron powder diffraction (NPD) and ultra-high resolution TOF NPD on (1−x)BiFeO3-xPbTiO3 solid solutions (x =0−0.3) have been determined.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"13 1","pages":"91-91"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83040364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Current-voltage characteristics of MDM and MDSCM structures on basis of lithium borates 基于硼酸锂的MDM和MDSCM结构的电流-电压特性
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464749
V. Adamiv, Y. Burak, I.S. Say, I. Teslyuk, B. Turko, M. Panasyuk
{"title":"Current-voltage characteristics of MDM and MDSCM structures on basis of lithium borates","authors":"V. Adamiv, Y. Burak, I.S. Say, I. Teslyuk, B. Turko, M. Panasyuk","doi":"10.1109/OMEE.2012.6464749","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464749","url":null,"abstract":"The results of investigations of current-voltage characteristics for metal-dielectric-metal and metal-dielectric-semiconductor-metal structures, where crystalline and glass lithium borates used as dielectrics, are presented.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"9 1","pages":"225-226"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81509261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Carbon-siliceous nanocomposites via the method of sol-gel technology for selective coatings of solar collectors 溶胶-凝胶法制备碳硅纳米复合材料用于太阳能集热器的选择性涂层
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464903
R. Musiy, S. Khairnasov, I. Semenyuk
{"title":"Carbon-siliceous nanocomposites via the method of sol-gel technology for selective coatings of solar collectors","authors":"R. Musiy, S. Khairnasov, I. Semenyuk","doi":"10.1109/OMEE.2012.6464903","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464903","url":null,"abstract":"It was developed the selective coating by new type for the solar heat collectors. It has been used the carbon-siliceous nanocomposite obtained via sol-gel technology method. The comparative investigations of the obtained coating and the sample of SunSelect firm (Germany) were carried out. The distinctive peculiarity is the preparation of the coating by a high cost technology of the vacuum evaporation. The independent measurements have been done under the irradiation of the natural solar flow of radiation and the simulator of the solar spectrum.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"77 1","pages":"190-191"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76453376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis and structural investigations of tantalates phosphates in the flux system Na2O-P2O5-Ta2O5-MoO3 Na2O-P2O5-Ta2O5-MoO3助熔剂体系中磷酸钽酸盐的合成及结构研究
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464779
I. V. Odynets, O. M. Doroshenko, A. A. Babaryk, N. Slobodyanik, S. Khainakov, V. Baumer
{"title":"Synthesis and structural investigations of tantalates phosphates in the flux system Na2O-P2O5-Ta2O5-MoO3","authors":"I. V. Odynets, O. M. Doroshenko, A. A. Babaryk, N. Slobodyanik, S. Khainakov, V. Baumer","doi":"10.1109/OMEE.2012.6464779","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464779","url":null,"abstract":"The complex sodium-tantalum phosphates (Na<inf>2</inf>Ta<inf>6</inf>P<inf>4</inf>O<inf>26</inf>, Na<inf>3</inf>Ta<inf>7</inf>P<inf>4</inf>O<inf>29</inf>, Na<inf>4</inf>Ta<inf>8</inf>P<inf>4</inf>O<inf>32</inf>) have been synthesized using the flux method in the quasi-quaternary system Na<inf>2</inf>O-P<inf>2</inf>O<inf>5</inf>-Ta<inf>2</inf>O<inf>5</inf>-MoO<inf>3</inf>. These compounds are isostructural with family of sodium-niobium phosphates Na<inf>x</inf>Nb<inf>2m</inf>P<inf>4</inf>O<inf>6m+8</inf> and tightly related to monophosphate tungsten bronzes (MPTB<inf>p</inf>) with pentagonal-shaped tunnels. The structure of these phosphates has been investigated by X-ray powder and single crystal diffraction. Their three-dimensional frameworks consist of slabs of corner-shared TaO<inf>6</inf> distorted octahedra connected via isolated PO<inf>4</inf> tetrahedra and delimit pentagonal tunnels running along c, where Na atoms are located. The solid state band gap measurements gave reasonable prospects for its photocatalytic activity.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"43 1","pages":"107-108"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76746789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Optical spectroscopy of Nd-doped borate glasses 掺钕硼酸盐玻璃的光谱学
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464900
B. Padlyak, W. Ryba-Romanowski, R. Lisiecki, V. Adamiv, Y. Burak, I. Teslyuk
{"title":"Optical spectroscopy of Nd-doped borate glasses","authors":"B. Padlyak, W. Ryba-Romanowski, R. Lisiecki, V. Adamiv, Y. Burak, I. Teslyuk","doi":"10.1109/OMEE.2012.6464900","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464900","url":null,"abstract":"Optical absorption, luminescence excitation and emission spectra as well as luminescence kinetics of the Nd<sup>3+</sup> centres in glasses with Li<inf>2</inf>B<inf>4</inf>O<inf>7</inf>:Nd, LiCaBO<inf>3</inf>:Nd, and CaB<inf>4</inf>O<inf>7</inf>:Nd compositions containing 0.5 and 1.0 mol. % Nd<inf>2</inf>O<inf>3</inf> have been investigated and analyzed. Using Judd-Ofelt theory oscillator strengths (f) and phenomenological intensity parameters Ω<inf>t</inf> (Ω<inf>2</inf>, Ω<inf>4</inf>, and Ω<inf>6</inf>) for all investigated glasses were determined. Radiative transitions rates (W<inf>r</inf>), radiative lifetimes (τ<inf>rad</inf>), and branching ratios (β) for Nd<sup>3+</sup> centres have been calculated. Measured lifetimes for Nd<sup>3+</sup> centres in the <sup>4</sup>F<inf>3/2</inf> emitting level are compared with those calculated and quantum efficiency (η) have been estimated.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"1 1","pages":"200-201"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75218105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Influence of solvents on sol-gel deposited SnO2 gas-sensitive film formation 溶剂对溶胶-凝胶沉积SnO2气敏膜形成的影响
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464861
A. Ponomareva, V. Moshnikov
{"title":"Influence of solvents on sol-gel deposited SnO2 gas-sensitive film formation","authors":"A. Ponomareva, V. Moshnikov","doi":"10.1109/OMEE.2012.6464861","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464861","url":null,"abstract":"The surface topography of sol-gel deposited SiO2-SnO2 nanocomposite films obtained by using different solvents as well their optical and gas sensing properties were investigated. An approach based on the theory of fractals was used to quantify the nanostructure of sol-gel deposited films. Optical properties were measured in the UV/VIS ranges. Film properties such as Urbach energy and optical energy gap were analyzed. Basic gas sensitive characteristics (sensitivity, response and recovery time) of were derived.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"83 1","pages":"23-24"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76116969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The dependence of optical properties of LiNbO3 crystal on the impurity content studied toward the advancement of volume holographic data storage technology 研究了杂质含量对LiNbO3晶体光学性质的影响，为推进体全息数据存储技术的发展奠定了基础
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464804
M. Yukselici, A. Aşıkoğlu, D. Bulut, D. Sugak, I. Solskii, I. Syvorotka, Y. Zhydachevskii, S. Ubizskii, O. Buryy
{"title":"The dependence of optical properties of LiNbO3 crystal on the impurity content studied toward the advancement of volume holographic data storage technology","authors":"M. Yukselici, A. Aşıkoğlu, D. Bulut, D. Sugak, I. Solskii, I. Syvorotka, Y. Zhydachevskii, S. Ubizskii, O. Buryy","doi":"10.1109/OMEE.2012.6464804","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464804","url":null,"abstract":"Research on holographic data storage has been carried out by using continuous wave laser at 632.8. The erasure time constants for continuous readout have been determined. Defect structures of congruent lithium niobate crystal heat-treated at high temperature were identified by optical absorption spectroscopy and the effect of defect bands modified by high temperature heat treatment on the continuous illumination life time of holograms stored in the crystal were studied.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"112 6 1","pages":"163-164"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73957478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of the low-symmetry crystal field on the energy states of CuO crystals 低对称性晶体场对CuO晶体能态的影响
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464814
Ya. O. Dovhyj, I. Man'kovska
{"title":"Influence of the low-symmetry crystal field on the energy states of CuO crystals","authors":"Ya. O. Dovhyj, I. Man'kovska","doi":"10.1109/OMEE.2012.6464814","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464814","url":null,"abstract":"The valence-band splitting in a single crystal of CuO has been detected by using the methods of optical spectroscopy. The size of this splitting at the Γ-point of the Brillouin Zone has been determined. Interpretation of this phenomenon taking into account symmetry of the crystal field is given.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"15 1","pages":"140-141"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74785111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Peculiar features of magnetic and resistive transitions in partially crystallized La0.84Na0.16MnO3 films 部分结晶La0.84Na0.16MnO3薄膜的磁性和电阻性转变特征
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464770
L. Pan’kiv, V. Tsmots, I. Pan’kiv, A. Tovstolytkin, A. Matviyenko
{"title":"Peculiar features of magnetic and resistive transitions in partially crystallized La0.84Na0.16MnO3 films","authors":"L. Pan’kiv, V. Tsmots, I. Pan’kiv, A. Tovstolytkin, A. Matviyenko","doi":"10.1109/OMEE.2012.6464770","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464770","url":null,"abstract":"The present work aims to study magnetic, electric, magnetoresistance and resonance properties of partially crystallized La0.84Na0.16MnO3 thin films. Peculiar behavior resulting from the wide-range coexistence of highly conductive ferromagnetic and weakly conductive paramagnetic phases has been analyzed. Based on the results of magnetic measurements and theoretical calculations, the dependence of the volume fraction of ferromagnetic phase, VFM, on temperature is calculated. The VFM values whereby electric resistance and magnetoresistance display maxima are determined.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"44 1","pages":"272-273"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80938662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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