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2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)最新文献

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Recombination luminescence in LaPO4-Eu and LaPO4-Pr nanoparticles LaPO4-Eu和LaPO4-Pr纳米颗粒的重组发光
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2013-06-01 DOI: 10.1063/1.4808797
T. Malyy, V. Vistovskyy, Z. Khapko, A. Pushak, N. Mitina, Alexander Zaichenko, A. V. Gektin, A. Voloshinovskii
{"title":"Recombination luminescence in LaPO4-Eu and LaPO4-Pr nanoparticles","authors":"T. Malyy, V. Vistovskyy, Z. Khapko, A. Pushak, N. Mitina, Alexander Zaichenko, A. V. Gektin, A. Voloshinovskii","doi":"10.1063/1.4808797","DOIUrl":"https://doi.org/10.1063/1.4808797","url":null,"abstract":"The luminescence properties of LaPO<inf>4</inf>-Eu and LaPO<inf>4</inf>-Pr nanoparticles with various sizes (8–50 nm) are studied upon the excitation by VUV and X-ray quanta. The dependences of luminescence intensity on nanoparticle size for nanoparticles LaPO<inf>4</inf>-Pr and LaPO<inf>4</inf>-Eu possessing, respectively, by the electron and hole recombination luminescence at the excitation by quanta of various energies are discussed.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"59 1","pages":"219-220"},"PeriodicalIF":0.0,"publicationDate":"2013-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76601002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 33
The luminescence of PbWO4:Tb and CdWO4:Tb,Li crystals at synchrotron excitation PbWO4:Tb和CdWO4:Tb,Li晶体在同步加速器激发下的发光
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464741
S. Novosad, L. Kostyk, I. Novosad, A. Luchechko
{"title":"The luminescence of PbWO4:Tb and CdWO4:Tb,Li crystals at synchrotron excitation","authors":"S. Novosad, L. Kostyk, I. Novosad, A. Luchechko","doi":"10.1109/OMEE.2012.6464741","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464741","url":null,"abstract":"The luminescence of PbWO<inf>4</inf>:Tb<sup>3+</sup> and CdWO<inf>4</inf>:Tb,Li crystals is effectively excited by the synchrotron radiation in the long-wavelength fundamental absorption edge region and in the region of photon multiplication. In the case of PbWO<inf>4</inf>:Tb<sup>3+</sup> excitation of using photons with energy 14.1 eV the weak recombination luminescence of terbium impurity is observed against the background of matrix emission at 300 K. The luminescence intensity of PbWO<inf>4</inf>:Tb<sup>3+</sup> increases about an order of magnitude, when the temperature is decreased to 8 K, at the same time the luminescence characteristic for PbWO<inf>4</inf> crystals is observed. It was shown, that the spectrum of low-temperature matrix luminescence of PbWO<inf>4</inf>:Tb is approximated by elementary bands with maxima near 2.93, 2.61, 2.34 and 1.9 eV. The luminescence spectra of CdWO<inf>4</inf>:Tb,Li at 10 K may be presented by the superposition of elementary matrix bands 2.07, 2.47 and 2.73 eV and narrow bands (lines) associated with f-f-transitions in Tb<sup>3+</sup> ions. The nature of emission bands is discussed.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"4 1","pages":"243-244"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75455481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Luminescent properties of MeMoO4 (Me=Ca, Sr, Zn, Li2) single crystals MeMoO4 (Me=Ca, Sr, Zn, Li2)单晶的发光特性
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464744
A. Savon, D. Spassky
{"title":"Luminescent properties of MeMoO4 (Me=Ca, Sr, Zn, Li2) single crystals","authors":"A. Savon, D. Spassky","doi":"10.1109/OMEE.2012.6464744","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464744","url":null,"abstract":"The luminescent properties of MeMoO<inf>4</inf> (Me=Ca, Sr, Zn, Li<inf>2</inf>) single crystals were studied. All the results are discussed in view of applying these scintillating materials in cryogenic environment.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"29 1","pages":"237-238"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74047318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
On the application of chalcogenide glasses in temperature sensors 硫化物玻璃在温度传感器中的应用
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464824
M. Shpotyuk, D. Chalyy, O. Shpotyuk, M. Iovu, A. Andriesh, M. Vakiv, S. Ubizskii
{"title":"On the application of chalcogenide glasses in temperature sensors","authors":"M. Shpotyuk, D. Chalyy, O. Shpotyuk, M. Iovu, A. Andriesh, M. Vakiv, S. Ubizskii","doi":"10.1109/OMEE.2012.6464824","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464824","url":null,"abstract":"In this paper we report about a possibility of application of chalcogenide glasses as active media in optoelectronic temperature sensors. All investigations were performed on a sample of Ge18As18Se64 chalcogenide glass as typical covalent network glass with rigid structure. Temperature dependence of optical transmission in the fundamental optical absorption edge region was studied through the glass transition interval. A monotone increasing temperature dependence of position of the fundamental optical absorption edge at the half maximum of its intensity was observed through the whole investigated temperature range as well as quasi-linear dependence upon the temperature in the region below glass transition.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"113 1","pages":"187-188"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78197152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Femtosecond relaxation dynamics of photo-excited carriers in Si nanoparticles embedded in SiO2 matrix 二氧化硅基体中Si纳米粒子光激发载流子的飞秒弛豫动力学
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464891
V. Kadan, V. A. Dan’ko, I. Indutnyi, I. Dmitruk, P. Korenyuk, I. Blonskyi
{"title":"Femtosecond relaxation dynamics of photo-excited carriers in Si nanoparticles embedded in SiO2 matrix","authors":"V. Kadan, V. A. Dan’ko, I. Indutnyi, I. Dmitruk, P. Korenyuk, I. Blonskyi","doi":"10.1109/OMEE.2012.6464891","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464891","url":null,"abstract":"We show that full saturation of the interface-located trap states by the photogenerated carriers under the femtosecond excitation in nano-Si/SiO2 results in the increase of the free carriers' lifetime and the quantum yield of the luminescence. The observed increase of the quantum yield is unexpected, in contrast to the commonly observed decrease under nanosecond excitation.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"81 1","pages":"139-139"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79777960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Time decay of stable absorption of gamma irradiated lithium niobate crystal doped by cuprum ions 掺铜离子辐照铌酸锂晶体稳定吸收的时间衰减
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464803
P. Potera
{"title":"Time decay of stable absorption of gamma irradiated lithium niobate crystal doped by cuprum ions","authors":"P. Potera","doi":"10.1109/OMEE.2012.6464803","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464803","url":null,"abstract":"The present work is devoted to investigation of stability of stable color centers that are induced by gamma radiation in Cu-doped LiNbO3 single crystals.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"15 1","pages":"165-166"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84363466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Calculation of optical rotation and refractive indices in the langasite family crystals langasite族晶体旋光性和折射率的计算
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464815
Y. Shopa, N. Ftomyn
{"title":"Calculation of optical rotation and refractive indices in the langasite family crystals","authors":"Y. Shopa, N. Ftomyn","doi":"10.1109/OMEE.2012.6464815","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464815","url":null,"abstract":"The polarizability theory of optical activity (OA) is applied to calculation the optical rotation (OR) of the langasite family crystals. The dispersion of OR is calculated. The good agreement between both calculated and observed optical anisotropy parameters are obtained.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"116 1","pages":"137-138"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80932255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Organic-inorganic hybrid materials doped with Eu3+, Tb3+, La3+ and lithium ions 掺有Eu3+、Tb3+、La3+和锂离子的有机-无机杂化材料
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464848
E. Zelazowska, E. Rysiakiewicz-Pasek, M. Borczuch-Laczka
{"title":"Organic-inorganic hybrid materials doped with Eu3+, Tb3+, La3+ and lithium ions","authors":"E. Zelazowska, E. Rysiakiewicz-Pasek, M. Borczuch-Laczka","doi":"10.1109/OMEE.2012.6464848","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464848","url":null,"abstract":"Organic-inorganic hybrid materials doped with Eu<sup>3+</sup>, Tb<sup>3+</sup> La<sup>3+</sup> and lithium ions were produced by sol-gel method using Tetraethyl orthosilicate and poly(methyl methacrylate), ethyl methacrylate, butyl methacrylate, ethyl acetyloacetate as inorganic and organic precursors. Morphology and structure of the hybrids heated at 125°C were characterized by Scanning electron microscopy equipped with Energy dispersive X-ray spectroscopy (SEM/EDS, X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), 29Si MAS Nuclear Magnetic Resonance. In all the hybrids, photoluminescence emissions from (<sup>5</sup>D<inf>3</inf>), <sup>5</sup>D<inf>4</inf> →<sup>7</sup>F<inf>J</inf> and <sup>5</sup>D<inf>0</inf>→<sup>7</sup>F<inf>J</inf> transitions of Eu<sup>3+</sup> and Tb<sup>3+</sup> ions, were revealed.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"1 1","pages":"49-50"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78542609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Electron energy bands of CdO crystal evaluated with accounting of the strong correlated electrons 利用强相关电子计算了CdO晶体的电子能带
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464813
S. Syrotyuk, V. Shved
{"title":"Electron energy bands of CdO crystal evaluated with accounting of the strong correlated electrons","authors":"S. Syrotyuk, V. Shved","doi":"10.1109/OMEE.2012.6464813","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464813","url":null,"abstract":"The electron energy bands and densities of states have been calculated within the projector augmented waves (PAW) formalism. The PBE exchange-correlation functional gives the absence of the gap contrary to the experiment. The account of the exact exchange substantially improves the results for direct and indirect interband gaps.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"67 1","pages":"142-143"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80280135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Poling behaviour of technical ferroelectrics studied by in-situ neutron diffraction 原位中子衍射技术研究铁电体的极化行为
2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI: 10.1109/OMEE.2012.6464785
M. Hoelzel, M. Hinterstein, H. Kungl, W. Jo, H. Fuess,
{"title":"Poling behaviour of technical ferroelectrics studied by in-situ neutron diffraction","authors":"M. Hoelzel, M. Hinterstein, H. Kungl, W. Jo, H. Fuess,","doi":"10.1109/OMEE.2012.6464785","DOIUrl":"https://doi.org/10.1109/OMEE.2012.6464785","url":null,"abstract":"Neutron diffraction studies on technical ferroelectric ceramics under the influence of high electric fields were performed to establish correlations between the macroscopic poling behaviour and corresponding structural changes. The investigations were carried out on bulk samples of lanthanum doped lead zirconate titanate (PLZT) with compositions around the morphotropic phase boundary and also on a bismuth sodium titanate based system (BNT-BT-KNN). In two compositions of the system BNT-BT-KNN, the large field induced macroscopic strain could be explained by a phase transformation during the poling process. PLZT samples were investigated under various orientations of the electric field to examine domain switching and strain effects.","PeriodicalId":6332,"journal":{"name":"2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)","volume":"1 1","pages":"94-95"},"PeriodicalIF":0.0,"publicationDate":"2012-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76948480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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