二氧化硅基体中Si纳米粒子光激发载流子的飞秒弛豫动力学

2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI:10.1109/OMEE.2012.6464891

V. Kadan, V. A. Dan’ko, I. Indutnyi, I. Dmitruk, P. Korenyuk, I. Blonskyi

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引用次数: 0

摘要

我们发现，在飞秒激发下，纳米si /SiO2中光生载流子的界面位置阱态完全饱和，导致自由载流子的寿命和发光的量子产率增加。与通常在纳秒激发下观察到的量子产率下降相比，观察到的量子产率的增加是出乎意料的。

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Femtosecond relaxation dynamics of photo-excited carriers in Si nanoparticles embedded in SiO2 matrix

We show that full saturation of the interface-located trap states by the photogenerated carriers under the femtosecond excitation in nano-Si/SiO2 results in the increase of the free carriers' lifetime and the quantum yield of the luminescence. The observed increase of the quantum yield is unexpected, in contrast to the commonly observed decrease under nanosecond excitation.

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2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)

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