2012 38th IEEE Photovoltaic Specialists Conference最新文献_第3页

High band gap solar cells for underwater Photovoltaic applications 用于水下光伏应用的高带隙太阳能电池

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6318004

P. Jenkins, S. Messenger, K. Trautz, S. Maximenko, D. Goldstein, D. Scheiman, R. Walters

引用次数: 15

Comparison of pyranometers vs. PV reference cells for evaluation of PV array performance 热辐射计与PV参考电池的比较，以评估PV阵列的性能

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6318193

L. Dunn, M. Gostein, K. Emery

引用次数: 62

Modelling isotextured silicon solar cells and modules 模拟等纹理硅太阳能电池和模块

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6317599

S. Baker-Finch, K. McIntosh, D. Inns, M. Terry

{"title":"Modelling isotextured silicon solar cells and modules","authors":"S. Baker-Finch, K. McIntosh, D. Inns, M. Terry","doi":"10.1109/PVSC.2012.6317599","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6317599","url":null,"abstract":"We describe a one dimensional model for isotextured silicon solar cells. Combined optical and recombination analyses provide the tools required to predict the performance of isotextured cells; the utility of these tools is demonstrated by comparison with industrially fabricated screen-printed cells with full area back surface field. In this particular demonstration, inaccurate predetermination of front surface recombination reduces the predictive capability of the model. We measure the angular distribution of light from isotextured surfaces, showing that, when encapsulated with typical pottants beneath glass, current generation in isotextured cells approaches 99% of that achieved in random pyramid textured equivalents. This represents a reduction in the performance difference between the two textures when operating in air (not encapsulated); in this case, current generation in an isotextured device is 96% of that calculated beneath random pyramids. We calculate the short circuit current of photovoltaic modules comprising cast-mono silicon solar cells; when encapsulated beneath glass and EVA, isotexturing, rather than alkaline etching, maximises photogeneration in cells with less than 84% monocrystalline (<;100>;) surface area.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"13 1","pages":"000192-000198"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74429921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Heterogeneous integration of InGaN and Silicon solar cells for enhanced energy harvesting 用于增强能量收集的InGaN和硅太阳能电池的异质集成

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6318231

N. Das, M. Reed, A. Sampath, H. Shen, M. Wraback, R. Farrell, M. Iza, S. C. Cruz, J. R. Lang, N. Young, Y. Terao, C. Neufeld, S. Keller, S. Nakamura, S. Denbaars, U. Mishra, J. Speck

引用次数: 2

Single-crystalline-like germanium thin films on glass substrates 玻璃基板上的单晶状锗薄膜

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6318125

V. Selvamanickam, C. Jian, X. Xiong, G. Majkic, E. Galtsyan

引用次数: 2

Solar input data for photovoltaic performance modeling 用于光伏性能建模的太阳能输入数据

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6318227

M. Schnitzer, P. Johnson, C. Thuman, J. Freeman

{"title":"Solar input data for photovoltaic performance modeling","authors":"M. Schnitzer, P. Johnson, C. Thuman, J. Freeman","doi":"10.1109/PVSC.2012.6318227","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6318227","url":null,"abstract":"One of the most critical inputs to a photovoltaic (PV) energy model is the solar data set, which establishes the site's irradiance and weather variability. For long-term energy estimates, the solar data set is expected to represent the long-term climatological conditions on-site. While modeled solar data sets are available, the quality of these data vary by data source as well as regionally. The result of using a poor quality solar input data set is higher uncertainty in the energy production estimated from the model; conversely, a more accurate solar input data set can improve the confidence in the energy production estimate. As the solar industry begins to recognize the value of increasing confidence in PV performance modeling predictions, an increased focus on quality input solar data for PV energy estimation models is expected. Publicly available data sources were evaluated with respect to their suitability as input data for PV energy estimation. These included modeled data sources, publicly, available reference station data, and site-specific measured data. The results of a research study conducted at nine locations throughout the United States show that both the magnitude and the distribution of input solar data sets affect energy. The value of on-site solar data collection and its ability to reduce uncertainty from between 2% to 5% is presented, as demonstrated from a case study from a site in the United States Desert Southwest.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"81 1","pages":"003056-003060"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75332117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

The effect of CdTe growth temperature and ZnTe:Cu contacting conditions on CdTe device performance CdTe生长温度和ZnTe:Cu接触条件对CdTe器件性能的影响

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6317598

J. Burst, W. Rance, T. Barnes, M. Reese, J. Li, D. Kuciauskas, M. Steiner, T. Gessert, K. Zhang, C. T. Hamilton, K. Fuller, B. Aitken, C. K. Kosik Williams

{"title":"The effect of CdTe growth temperature and ZnTe:Cu contacting conditions on CdTe device performance","authors":"J. Burst, W. Rance, T. Barnes, M. Reese, J. Li, D. Kuciauskas, M. Steiner, T. Gessert, K. Zhang, C. T. Hamilton, K. Fuller, B. Aitken, C. K. Kosik Williams","doi":"10.1109/PVSC.2012.6317598","DOIUrl":"https://doi.org/10.1109/PVSC.2012.6317598","url":null,"abstract":"CdTe device performance is strongly dependent on the quality of the back contact and the ability of the back contact to introduce a copper doping profile in the CdTe layer itself. Copper-doped ZnTe (ZnTe:Cu) is a nearly ideal contact material for CdTe solar cells due to its work function and ability to source copper to CdTe. Most of the ZnTe:Cu studies in the past used CdTe grown at relatively low deposition temperatures (550°C and below). Here we investigate the use of ZnTe:Cu as a back contact for CdTe grown at temperatures up to 620°C. We observe a strong interplay between the CdTe absorber deposition conditions and optimized ZnTe:Cu contacting conditions. Device JV characteristics suggest that CdTe solar cells with absorber layers deposited by close-space sublimation (CSS) at high temperature, 600-620°C, are more robust to the back contact Cu doping level and contacting temperature than CdTe grown at lower temperatures. The implication for industrial processes is a ~1% absolute increase in device efficiency for devices in which the CdTe is deposited on PV glass at high temperature. Perhaps more importantly, this increased performance is maintained for a larger window of temperature and doping level of the ZnTe:Cu back contact. For devices with CdTe absorbers deposited at 600°C, device efficiency in excess of 13.5% is maintained for back contacts containing 2-5 wt.% Cu, and for contacting temperatures ranging from 300-360°C. Red-light bias quantum efficiency (QE) and capacitance-voltage (CV) measurements are used to probe the effect of the introduced copper doping profiles and net acceptor density to better understand how ZnTe:Cu sources influences the resulting CdTe device.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"16 1","pages":"000188-000191"},"PeriodicalIF":0.0,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74058173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 9

The effect of tailoring electron/hole blocking layers on the photovoltaic performance of the single junction solar cells 定制电子/空穴阻挡层对单结太阳能电池光电性能的影响

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6318110

Ming-Han Hsieh, Yuh‐Renn Wu, J. Singh

引用次数: 0

Low cost reliable highly concentrating photovoltaics - a reality 低成本可靠的高聚光光伏-一个现实

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6317913

A. Gombert

引用次数: 4

Development of a FPGA-based photovoltaic panel emulator based on a DC/DC converter 基于DC/DC变换器的fpga光伏板仿真器的研制

2012 38th IEEE Photovoltaic Specialists Conference Pub Date : 2012-06-03 DOI: 10.1109/PVSC.2012.6317863

D. Ickilli, H. Can, K. S. Parlak

引用次数: 27