玻璃基板上的单晶状锗薄膜

V. Selvamanickam, C. Jian, X. Xiong, G. Majkic, E. Galtsyan
{"title":"玻璃基板上的单晶状锗薄膜","authors":"V. Selvamanickam, C. Jian, X. Xiong, G. Majkic, E. Galtsyan","doi":"10.1109/PVSC.2012.6318125","DOIUrl":null,"url":null,"abstract":"Single-crystalline-like germanium films have been demonstrated on inexpensive glass substrates (quartz). Ion Beam Assisted Deposition (IBAD) was employed to achieve biaxial crystallographic texture in MgO deposited on quartz substrates. Using intervening epitaxial oxide buffer layers, single-crystalline-like germanium films have been grown by magnetron sputtering. In-spite of significant lattice mismatch and structural mismatch, epitaxial growth was achieved in all layers. All thin films in this work were deposited by reel-to-reel processing. In-plane texture better than 5° has been measured in the germanium film. A Hall mobility value of 107 cm2/Vs was attained in 400 nm thick germanium films on glass substrates.","PeriodicalId":6318,"journal":{"name":"2012 38th IEEE Photovoltaic Specialists Conference","volume":"29 1","pages":"002592-002595"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Single-crystalline-like germanium thin films on glass substrates\",\"authors\":\"V. Selvamanickam, C. Jian, X. Xiong, G. Majkic, E. Galtsyan\",\"doi\":\"10.1109/PVSC.2012.6318125\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Single-crystalline-like germanium films have been demonstrated on inexpensive glass substrates (quartz). Ion Beam Assisted Deposition (IBAD) was employed to achieve biaxial crystallographic texture in MgO deposited on quartz substrates. Using intervening epitaxial oxide buffer layers, single-crystalline-like germanium films have been grown by magnetron sputtering. In-spite of significant lattice mismatch and structural mismatch, epitaxial growth was achieved in all layers. All thin films in this work were deposited by reel-to-reel processing. In-plane texture better than 5° has been measured in the germanium film. A Hall mobility value of 107 cm2/Vs was attained in 400 nm thick germanium films on glass substrates.\",\"PeriodicalId\":6318,\"journal\":{\"name\":\"2012 38th IEEE Photovoltaic Specialists Conference\",\"volume\":\"29 1\",\"pages\":\"002592-002595\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 38th IEEE Photovoltaic Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.2012.6318125\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 38th IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2012.6318125","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

单晶样锗薄膜已在廉价的玻璃衬底(石英)上得到证实。采用离子束辅助沉积(IBAD)技术在石英衬底上制备了MgO的双轴晶体结构。利用中间外延氧化物缓冲层,用磁控溅射法制备了类单晶锗薄膜。尽管存在明显的晶格失配和结构失配,但所有层都实现了外延生长。本研究中所有薄膜均采用卷对卷加工方法沉积。锗薄膜的面内织构优于5°。在400 nm厚的锗薄膜上,霍尔迁移率达到107 cm2/Vs。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Single-crystalline-like germanium thin films on glass substrates
Single-crystalline-like germanium films have been demonstrated on inexpensive glass substrates (quartz). Ion Beam Assisted Deposition (IBAD) was employed to achieve biaxial crystallographic texture in MgO deposited on quartz substrates. Using intervening epitaxial oxide buffer layers, single-crystalline-like germanium films have been grown by magnetron sputtering. In-spite of significant lattice mismatch and structural mismatch, epitaxial growth was achieved in all layers. All thin films in this work were deposited by reel-to-reel processing. In-plane texture better than 5° has been measured in the germanium film. A Hall mobility value of 107 cm2/Vs was attained in 400 nm thick germanium films on glass substrates.
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