N. Das, M. Reed, A. Sampath, H. Shen, M. Wraback, R. Farrell, M. Iza, S. C. Cruz, J. R. Lang, N. Young, Y. Terao, C. Neufeld, S. Keller, S. Nakamura, S. Denbaars, U. Mishra, J. Speck
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Heterogeneous integration of InGaN and Silicon solar cells for enhanced energy harvesting
We report here enhanced solar energy harvesting using a hybrid solar cell with silicon solar cells (visible-infrared light) on bottom and an InGaN solar cell (UV light) on top. The InGaN solar cell with 30 QW periods has peak external quantum efficiency (EQE) of 40 % at 380 nm, an open circuit voltage (Voc) of 2.0 V, a short circuit current (Isc) of 0.8 mA/cm2, and fill factor of 55%. We have demonstrated that the application of an InGaN “active window” to a silicon solar cell counterbalances the encapsulation power loss typically suffered during production of a solar panel.
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