IEEE Transactions on Advanced Packaging最新文献_第5页

Sn Bumping Without Photoresist Mould and Si Dice Stacking for 3-D Packaging 无光刻胶模具的锡碰撞和三维包装的硅片堆积

IEEE Transactions on Advanced Packaging Pub Date : 2010-05-24 DOI: 10.1109/TADVP.2010.2049019

Sung-Jun Hong, Ji Heon Jun, J. Jung, M. Mayer, Yujie Zhou

{"title":"Sn Bumping Without Photoresist Mould and Si Dice Stacking for 3-D Packaging","authors":"Sung-Jun Hong, Ji Heon Jun, J. Jung, M. Mayer, Yujie Zhou","doi":"10.1109/TADVP.2010.2049019","DOIUrl":"https://doi.org/10.1109/TADVP.2010.2049019","url":null,"abstract":"Chip stacking with through-silicon-vias (TSV) technology for 3-D packaging of electronic devices was investigated. A new process of direct solder bumping on Si wafers without photoresist (PR) mould was designed and applied in this study. The Cu extrusion process on the via was also omitted for process simplification. This simplified process can be useful for cost reduction and increased productivity. The substrate for the experiments was a p-type 〈100 〉 Si wafer of 100 mm diameter. In order to produce the vias, the Si wafer was etched by a deep reactive ion etcher (DRIE) using SF6 and C4F8 plasmas alternately. The produced vias were 40 μm in diameter and 80 μm in depth. On the via side walls, SiO2, Ti, and Au layers were formed with thicknesses of 1, 0.1, and 0.7μm, respectively. Pulsed direct current (DC) electroplating was used to fill the vias with Cu. Then the Si wafer was back ground to a thickness of 80 μm until the Cu filling in the vias was exposed to the surface without extrusion. Plating current subsequently flowed through the vias to the bumping surface, and Sn was electroplated on the Cu filling directly without a PR mould. To optimize the bumping process, the current density and time for Sn plating were varied from 0.04 to 0.06 A/cm2 and from 10 to 40 min, respectively. Bumps with a height of 20 μm were formed successfully with 0.05 A/cm2 and 30 min without a PR mould. The bump height increased with increasing plating current and time; for example, from 13 μm at 10 min to 33 μm at 40 min in case of 0.06 A/cm2. The Si dice with electroplated Sn bumps had dimensions of 5 × 5 mm and thickness of 80 μm. Three Si dice were stacked successfully by micro-soldering at 260°C. In the interface between the Sn bumps and the Cu filling, a Cu6Sn5 intermetallic compound was produced with a thickness of 3.2 μm. Through this study, a process for non-PR solder bumping by electroplating and wafer stacking with TSV was achieved successfully.","PeriodicalId":55015,"journal":{"name":"IEEE Transactions on Advanced Packaging","volume":"33 1","pages":"912-917"},"PeriodicalIF":0.0,"publicationDate":"2010-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/TADVP.2010.2049019","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62397514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 14

Electronic Packaging Materials for Extreme, Low Temperature, Fatigue Environments 用于极端、低温、疲劳环境的电子封装材料

IEEE Transactions on Advanced Packaging Pub Date : 2010-05-03 DOI: 10.1109/TADVP.2010.2044504

A. Shapiro, C. Tudryn, D. Schatzel, S. Tseng

引用次数: 12

Probabilistic Design Approach for Cyclic Fatigue Life Prediction of Microelectronic Interconnects 微电子互连循环疲劳寿命预测的概率设计方法

IEEE Transactions on Advanced Packaging Pub Date : 2010-05-03 DOI: 10.1109/TADVP.2010.2040734

L. Ladani, J. Razmi

{"title":"Probabilistic Design Approach for Cyclic Fatigue Life Prediction of Microelectronic Interconnects","authors":"L. Ladani, J. Razmi","doi":"10.1109/TADVP.2010.2040734","DOIUrl":"https://doi.org/10.1109/TADVP.2010.2040734","url":null,"abstract":"Deterministic approaches may predict the life of solder joint interconnects used in microelectronic devices far different from the test results and field environment. This difference is caused by uncertainties introduced in finite element and damage modeling with different random variables such as material properties, geometry, damage model constants, and many others. This paper presents a methodology to include these uncertainties in the life prediction approach for solder joint materials. The approach is implemented in predicting the life of ball grid array Pb-free solder joints under thermo-mechanical cyclic loading using the energy partitioning (E-P) damage model. The sensitivity of the finite element results to uncertainties in elastic and inelastic material properties are investigated using this probabilistic approach. In addition final life prediction sensitivity to uncertainties in damage model constants are studied and compared with the effect of uncertainties in material properties. The analyses show that from material properties, creep coefficient and activation energy are two factors that have significant effect in fluctuating the prediction results. Coefficient of thermal expansion was also found to have a strong effect. When compared with the damage model constants, material properties are found to have a negligible effect suggesting a more cautious use of the damage models and constants. Damage model exponents show a more significant effect than damage model coefficients.","PeriodicalId":55015,"journal":{"name":"IEEE Transactions on Advanced Packaging","volume":"33 1","pages":"559-568"},"PeriodicalIF":0.0,"publicationDate":"2010-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/TADVP.2010.2040734","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62396777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

A Well-Conditioned Integral-Equation Formulation for Efficient Transient Analysis of Electrically Small Microelectronic Devices 小型微电子器件瞬态分析的良好条件积分方程

IEEE Transactions on Advanced Packaging Pub Date : 2010-05-03 DOI: 10.1109/TADVP.2009.2033569

H. Bağcı, F. Andriulli, F. Vipiana, G. Vecchi, E. Michielssen

{"title":"A Well-Conditioned Integral-Equation Formulation for Efficient Transient Analysis of Electrically Small Microelectronic Devices","authors":"H. Bağcı, F. Andriulli, F. Vipiana, G. Vecchi, E. Michielssen","doi":"10.1109/TADVP.2009.2033569","DOIUrl":"https://doi.org/10.1109/TADVP.2009.2033569","url":null,"abstract":"A hierarchically regularized coupled set of time-domain surface and volume electric field integral-equations (TD-S-EFIE and TD-V-EFIE) for analyzing electromagnetic wave interactions with electrically small and geometrically intricate composite structures comprising perfect electrically conducting surfaces and finite dielectric volumes is presented. A classically formulated coupled set of TD-S- and V-EFIEs is shown to be ill-conditioned at low frequencies owing to the hypersingular nature of the TD-S-EFIE. To eliminate low-frequency breakdown in marching-on-in-time solvers for these coupled equations, a hierarchical regularizer leveraging generalized Rao-Wilton-Glisson functions is applied to the TD-S-EFIE; no regularization is applied to the TD-V-EFIE as it is protected from low-frequency breakdown by an identity term. The resulting hierarchically regularized hybrid TD-S- and V-EFIE solver is applicable to the analysis of wave interactions with electrically small and densely meshed structures of arbitrary topology. The accuracy, efficiency, and applicability of the proposed solver are demonstrated by analyzing crosstalk in a six-port transmission line, radiation from a miniature radio-frequency identification antenna, and, plane-wave coupling onto a partially-shielded and fully loaded two-layer computer board.","PeriodicalId":55015,"journal":{"name":"IEEE Transactions on Advanced Packaging","volume":"33 1","pages":"468-480"},"PeriodicalIF":0.0,"publicationDate":"2010-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/TADVP.2009.2033569","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62394189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 15

Electrical Modeling and Design of a Wafer-Level Package for MEM Resonators memm谐振器晶圆级封装的电建模与设计

IEEE Transactions on Advanced Packaging Pub Date : 2010-05-03 DOI: 10.1109/TADVP.2010.2043101

J. Perruisseau-Carrier, M. Mazza, A. Jourdain, A. Skrivervik, A. Ionescu, H. Tilmans

引用次数: 2

Distribution and Diffusion of Water in Model Epoxy Molding Compound: Molecular Dynamics Simulation Approach 水在模型环氧树脂中的分布和扩散:分子动力学模拟方法

IEEE Transactions on Advanced Packaging Pub Date : 2010-05-01 DOI: 10.1109/TADVP.2009.2033570

Seung Geol Lee, S. Jang, Jongman Kim, Gene S Kim

{"title":"Distribution and Diffusion of Water in Model Epoxy Molding Compound: Molecular Dynamics Simulation Approach","authors":"Seung Geol Lee, S. Jang, Jongman Kim, Gene S Kim","doi":"10.1109/TADVP.2009.2033570","DOIUrl":"https://doi.org/10.1109/TADVP.2009.2033570","url":null,"abstract":"The distribution and diffusion of water with various water content in a fully crosslinked epoxy molding compound was simulated using a parallel full-atomistic molecular dynamics simulation method. We found that the free volume is 5.1%, 4.4%, and 4.0% of the total system volume at 0 wt%, 4 wt%, and 7 wt% of water content, respectively, accommodating the absorbed water molecules, where the molecules are distributed throughout the system. The hydrophilic groups of the epoxy molding compound (such as tertiary amine groups and hydroxyl groups) are uniformly distributed through the system: the average distance between the amine groups is ~9.5 ¿ and that between the hydroxyl groups is 3.8-7.2 ¿. The water molecules are distributed in proximity to these hydrophilic groups. By counting the number of these water molecules nearby the functional groups, we found that on average, each amine group has 2.47 and 3.86 water molecules, and each hydroxyl group has 0.61 and 0.85 water molecules at 4 wt% and 7 wt% water content, respectively. The water diffusion proceeds via the hopping mechanism and is enhanced with increasing water content: 0.1690 × 10-6 cm 2/s for 4 wt% water content and 0.2065 × 10-6 cm2/s for 7 wt% water content.","PeriodicalId":55015,"journal":{"name":"IEEE Transactions on Advanced Packaging","volume":"33 1","pages":"333-339"},"PeriodicalIF":0.0,"publicationDate":"2010-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/TADVP.2009.2033570","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"62394260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 25

Finite-Difference Analysis of Interconnects With Frequency-Dependent Parameters Based on Equivalent Circuit Models 基于等效电路模型的频率相关参数互连的有限差分分析

IEEE Transactions on Advanced Packaging Pub Date : 2010-05-01 DOI: 10.1109/TADVP.2009.2033200

M. Tang, Junfa Mao

引用次数: 9

Correction to "Laser-Assisted Sealing and Testing for Ceramic Packaging of MEMS Devices" [Aug 03 283-288] 对“MEMS器件陶瓷封装激光辅助密封与测试”的修正[03年8月283-288]

IEEE Transactions on Advanced Packaging Pub Date : 2010-05-01 DOI: 10.1109/TADVP.2010.2049287

Yi Tao, A. Malshe, W. Brown, D. Dereus, S. Cunningham

引用次数: 0

On Simplified Fast Modal Analysis for Through Silicon Vias in Layered Media Based Upon Full-Wave Solutions 基于全波解的层状介质中硅通孔简化快速模态分析

IEEE Transactions on Advanced Packaging Pub Date : 2010-05-01 DOI: 10.1109/TADVP.2009.2033034

Zhonghai Guo, G. Pan

引用次数: 25

Serpentine Microstrip Lines With Zero Far-End Crosstalk for Parallel High-Speed DRAM Interfaces 用于并行高速DRAM接口的零远端串扰蛇形微带线

IEEE Transactions on Advanced Packaging Pub Date : 2010-05-01 DOI: 10.1109/TADVP.2009.2033938

Kyoungho Lee, Hae-Kang Jung, Hyung-Joon Chi, Hye-Jung Kwon, J. Sim, Hong-June Park

引用次数: 39