Physica Status Solidi-Rapid Research Letters最新文献_第7页

Second‐order topological corner states in square lattice plasmonic metasurfaces with C4 and glide symmetries 具有 C4 和滑行对称性的方晶格质子元表面中的二阶拓扑角态

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-04-18 DOI: 10.1002/pssr.202400063

Kwang-Kwon Om, Kwang-Hyon Kim

{"title":"Second‐order topological corner states in square lattice plasmonic metasurfaces with C4 and glide symmetries","authors":"Kwang-Kwon Om, Kwang-Hyon Kim","doi":"10.1002/pssr.202400063","DOIUrl":"https://doi.org/10.1002/pssr.202400063","url":null,"abstract":"Recently, plasmonic metasurfaces have emerged as a platform for topological photonics, exhibiting both advantages of plasmon‐induced tight confinement of local field and topological robustness. Most of previous works regarding plasmonic systems are limited to the first‐order topologies and only a few studies dealt with higher‐order topological states in honeycomb lattices. Moreover, second‐order topologies of square lattice plasmonic systems have not yet been studied. This work presents second‐order topological corner states in the square lattices of metallic nanoparticles (NPs) with various symmetries, taking two different C4 and glide symmetries as examples. Their unit cells are obtained from non‐primitive cells, consisting of four equal spheroidal NPs, by expanding (or shrinking), rotating, and resizing. Bulk bands and spectral functions of the unit cells calculated by using the coupled dipole method well agree with COMSOL simulation results, revealing the accuracy of the numerical calculations as well as the experimental realizability of the systems. Second‐order topological corner states and their robustness against structural disorder are numerically shown for three different square lattices. This work will trigger the extensive investigations to open a new realm of topological metasurfaces with promising applications.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"130 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140629423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Synthesis of two‐dimensional nonlayered α‐Nb2O5 nanosheets by the growth promoter of sulfur and alkali halides 利用硫和碱卤化物的生长促进剂合成二维非层状 α-Nb2O5 纳米片材

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-04-17 DOI: 10.1002/pssr.202400054

Bo Zhang, Chengyang Niu, Wenlong Chu, Xuehao Guo, Xilong Zhou, Cheng Li, Xiulian Fan, Luwei Zou, Zhaofeng Wu, Yunzhang Lu, Fangping OuYang, Yu Zhou, Hongyan Zhang

{"title":"Synthesis of two‐dimensional nonlayered α‐Nb2O5 nanosheets by the growth promoter of sulfur and alkali halides","authors":"Bo Zhang, Chengyang Niu, Wenlong Chu, Xuehao Guo, Xilong Zhou, Cheng Li, Xiulian Fan, Luwei Zou, Zhaofeng Wu, Yunzhang Lu, Fangping OuYang, Yu Zhou, Hongyan Zhang","doi":"10.1002/pssr.202400054","DOIUrl":"https://doi.org/10.1002/pssr.202400054","url":null,"abstract":"Niobium‐based oxides with wide bandgap and high dielectric constant show great potential in the applications of electronic and optoelectronic devices. Herein, the quasi van der Waals epitaxial growth of two‐dimensional (2D) α‐Nb2O5 nanosheets were reported, in which the growth promoter of sulfur and alkali halides have been utilized to catalyze the ultrathin 2D growth. The relatively low Gibbs free energy of α‐Nb2O5 nanosheets could drive the ultrathin growth down to 30 nm on the c‐Al2O3 substrate by the transformation of T‐Nb2O5 powder sources without any doping effects, demonstrating that the diverse α‐Nb2O5 nanostructure morphologies. The as‐grown α‐Nb2O5 nanosheets were characterized with high crystalline quality and specific dominated growth plane indicating the uniform dielectric properties. The metal‐insulator‐metal (MIM) capacitor has confirmed the α‐Nb2O5 nanosheet with a high dielectric constant over 40. Our dual promoters’ growth design strategy provides a universal synthesis method for the 2D nonlayered dielectric materials.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"181 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140613581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Wetting Properties of Black Silicon Layers Fabricated by Different Techniques 不同工艺制作的黑硅层的润湿性能

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-04-15 DOI: 10.1002/pssr.202400072

Gagik Ayvazyan, Levon Hakhoyan, Arman Vardanyan, Hele Savin, Xiaolong Liu

{"title":"Wetting Properties of Black Silicon Layers Fabricated by Different Techniques","authors":"Gagik Ayvazyan, Levon Hakhoyan, Arman Vardanyan, Hele Savin, Xiaolong Liu","doi":"10.1002/pssr.202400072","DOIUrl":"https://doi.org/10.1002/pssr.202400072","url":null,"abstract":"The wettability of black silicon (BSi) layers fabricated by reactive ion etching (RIE), metal‐assisted chemical etching (MACE), and laser‐induced etching (LIE) techniques was studied. The contact angles of wetting on the samples with deionized water and methylammonium iodide‐based perovskite solutions were determined. It has been found that the element composition and the enlargement area factor of BSi layers have a significant effect on their wettability. When tested with water, the RIE and MACE BSi layers exhibit hydrophobic properties, while the LIE BSi layer demonstrates hydrophilic properties due to the SiOx‐rich surface structures. It is also shown that aging leads to a decrease in the water contact angle. Upon exposure to perovskite solution droplets, BSi layers become highly lyophilic. Based on the Wenzel and Cassie‐Baxter models, the mechanisms responsible for the wetting states of the fabricated samples are identified. The results obtained provide valuable insights into the potential of using these layers in tandem perovskite/silicon solar cells.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"33 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140564193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of Interlayer Dielectric in BaTiO3/III‐Nitride Transistors 研究 BaTiO3/III 氮化物晶体管中的层间介电质

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-04-13 DOI: 10.1002/pssr.202400042

Hyunsoo Lee, Joe F. McGlone, Sheikh Ifatur Rahman, Christopher Chae, Chandan Joishi, Jinwoo Hwang, Siddharth Rajan

{"title":"Investigation of Interlayer Dielectric in BaTiO3/III‐Nitride Transistors","authors":"Hyunsoo Lee, Joe F. McGlone, Sheikh Ifatur Rahman, Christopher Chae, Chandan Joishi, Jinwoo Hwang, Siddharth Rajan","doi":"10.1002/pssr.202400042","DOIUrl":"https://doi.org/10.1002/pssr.202400042","url":null,"abstract":"This study investigated the impact of varying the thickness of the Al2O3 interlayer dielectric on the electrical characteristics of BaTiO3/III‐Nitride transistors. The findings revealed that a minimum thickness of 8 nm for the Al2O3 layer is crucial to maintain high device performance and protect against sputtering‐induced damage during BaTiO3 deposition. The fabricated BaTiO3/Al2O3/AlGaN/GaN HEMTs exhibited exceptional electrical properties, including a maximum current density of 700 mA/mm, an on‐resistance of 5 Ω·mm, an ION/IOFF ratio of 107, a subthreshold slope of 119 mV/dec, and significantly reduced gate leakage current. The devices with the optimal 8 nm Al2O3 thickness demonstrated excellent agreement between theoretical and experimental values for effective mobility, achieving a value of 1188 cm2/V·s at a 2DEG density of 1013 cm‐2. Furthermore, the study confirmed that increasing the Al2O3 thickness also improved the quality of interface charge density, as evidenced by the results obtained from capacitance‐voltage (CV) measurements. These findings highlight the critical role of controlling the Al2O3 thickness in optimizing the electrical characteristics and overall performance of BaTiO3/III‐Nitride transistors.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"25 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140564310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Impact of sequential N ion implantation on extended defects and Mg distribution in Mg ion‐implanted GaN 连续 N 离子植入对镁离子植入氮化镓中扩展缺陷和镁分布的影响

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-04-12 DOI: 10.1002/pssr.202400074

Emi Kano, Jun Uzuhashi, Koki Kobayashi, Kosuke Ishikawa, Kyosuke Sawabe, Tetsuo Narita, Kacper Sierakowski, Michal Bockowski, Tadakatsu Ohkubo, Tetsu Kachi, Nobuyuki Ikarashi

{"title":"Impact of sequential N ion implantation on extended defects and Mg distribution in Mg ion‐implanted GaN","authors":"Emi Kano, Jun Uzuhashi, Koki Kobayashi, Kosuke Ishikawa, Kyosuke Sawabe, Tetsuo Narita, Kacper Sierakowski, Michal Bockowski, Tadakatsu Ohkubo, Tetsu Kachi, Nobuyuki Ikarashi","doi":"10.1002/pssr.202400074","DOIUrl":"https://doi.org/10.1002/pssr.202400074","url":null,"abstract":"In Mg ion implantation doping of GaN, sequential N ion implantation reportedly changes Mg concentrations in the Mg ion‐implanted region and the underlying region after activation annealing. We investigated the impact of sequential N ion implantation on defects and Mg distribution after post‐implantation annealing. Our atomic‐resolution analyses showed that, in the Mg ion‐implanted region, the N ion implantation increases the concentration of MgGa. We thus conclude that the Mg soluble in GaN by Mg ion implantation was increased by N ion implantation. The rest of the Mg atoms agglomerate to form clusters on the extended defects, and their concentration is also increased by the N implantation. The coarsening of extended defects was suppressed by the N ion implantation: the defects in the Mg+N implanted sample were nano‐scale interstitial‐type defects, and they did not grow or annihilate after annealing. This indicates that the N implantation changed the concentrations of interstitials.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"43 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140564291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design and Characterization of New 3D Reentrant Rhombic Auxetic Structures with Enhanced Mechanical Properties 具有增强机械性能的新型 3D Reentrant Rhombic Auxetic 结构的设计与表征

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-04-05 DOI: 10.1002/pssr.202470009

Yingying Xue, Jianhui Mu, Xingfu Wang

引用次数: 0

Efficiency Limits in Coalesced AlGaN Nanowire Ultraviolet LEDs 凝聚氮化铝纳米线紫外发光二极管的效率极限

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-04-05 DOI: 10.1002/pssr.202470007

Brelon J. May, Elline C. Hettiaratchy, Binbin Wang, Camelia M. Selcu, Bryan D. Esser, David W. McComb, Roberto C. Myers

引用次数: 0

Tuning the Ferromagnetic Resonance Frequency of Microstructured Permalloy Film on Flexible Substrate 在柔性基底上调谐微结构坡莫合金薄膜的铁磁共振频率

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-04-05 DOI: 10.1002/pssr.202400081

Ting Lei, Wei Zhang, Guohao Bo, Chengyu Feng, Na Li, Rongzhi Zhao, Lianze Ji, Jian Zhang, Xuefeng Zhang

{"title":"Tuning the Ferromagnetic Resonance Frequency of Microstructured Permalloy Film on Flexible Substrate","authors":"Ting Lei, Wei Zhang, Guohao Bo, Chengyu Feng, Na Li, Rongzhi Zhao, Lianze Ji, Jian Zhang, Xuefeng Zhang","doi":"10.1002/pssr.202400081","DOIUrl":"https://doi.org/10.1002/pssr.202400081","url":null,"abstract":"The importance of flexible ferromagnetic films in the application of flexible spintronic devices and microwave magnetic devices underscores the necessity for an in-depth understanding of the dynamic magnetic properties of these films. In particular, it is crucial to comprehend the regulation of the ferromagnetic resonance (FMR) frequency of flexible ferromagnetic films. This work outlines the preparation of periodic permalloy microstrip arrays with stripe domain on flexible PET films and applies them to linearly tune the FMR. The high-frequency optical branch (5.17 GHz) and low-frequency acoustic branch (2.89 GHz) are observed in the direction perpendicular (x-direction) and parallel (y-direction) to the microstrip, respectively. The Young's modulus mismatch between the PET film and permalloy layer leads to the directional distribution of local tension. This results in the enhancement of the Ht (219.4 Oe) required for the in-plane uniform precession on the PET film, compared to that on the Si substrate (181.6 Oe). By adjusting the width and thickness of the permalloy microstrip, Ht can be adjusted linearly on the PET film. This flexible ferromagnetic film with linear regulation of FMR frequency presents a new option for the future development of flexible microwave detectors and filters.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"50 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140564713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Energy-Level Alignment and Electronic Structure of Dual-State Luminogens Thin Films 双态发光薄膜的能级排列和电子结构

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-04-04 DOI: 10.1002/pssr.202400065

Wenjie Zhou, Yingying Li, Fulin Xie, Chengyuan Wang, Jiaxiang Yang, Qi Wang, Steffen Duhm

{"title":"Energy-Level Alignment and Electronic Structure of Dual-State Luminogens Thin Films","authors":"Wenjie Zhou, Yingying Li, Fulin Xie, Chengyuan Wang, Jiaxiang Yang, Qi Wang, Steffen Duhm","doi":"10.1002/pssr.202400065","DOIUrl":"https://doi.org/10.1002/pssr.202400065","url":null,"abstract":"Organic dual-state emitters show high quantum yields of luminescence in both solution and the aggregated state. Alkyl side chains are frequently used to engineer solid-state structures and prominent examples are naphthalimide-functionalized cyanostilbene derivatives (NICS-X), where H-aggregation takes place for ethoxyl substitution (NICS-E), while methoxyl and butoxyl substitution (NICS-M and NICS-B) lead to the quasi-isolated Q-type structure. While this takes place for powder samples, vacuum-sublimed thin films are used, and it is shown by photoluminescence (PL) measurements that H-aggregation takes place for all three NICS derivatives. In contrast, the energy-level alignment of NICS-X films on graphite exhibits disparities as shown by photoelectron spectroscopy: pronounced disorder in NICS-B films leads to energy-level bending, while the energy levels of NICS-M and NICS-E films remain flat. In such a way, it is demonstrated that side-chain engineering of luminogens affects the short-range order (responsible for the PL) and the long-range order (responsible for the energy-level alignment) in different ways. Furthermore, the importance of a substrate (thin films vs powder) on the solid-state aggregation is highlighted.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"247 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140564197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magic of Solvents: Effect of Processing Solvents on Hole Transport in Organic Semiconductor Small Molecules 溶剂的魔力：加工溶剂对有机半导体小分子中空穴传输的影响

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-03-28 DOI: 10.1002/pssr.202400070

A. A. Piryazev, D. K. Sagdullina, I. E. Kuznetsov, A.F. Akhkiamova, M.V. Gapanovich, D. V. Anokhin, A. N. Zhivchikova, M. E. Sideltsev, E. D. Siaglova, M. M. Tepliakova, D. A. Ivanov, A. V. Akkuratov

{"title":"Magic of Solvents: Effect of Processing Solvents on Hole Transport in Organic Semiconductor Small Molecules","authors":"A. A. Piryazev, D. K. Sagdullina, I. E. Kuznetsov, A.F. Akhkiamova, M.V. Gapanovich, D. V. Anokhin, A. N. Zhivchikova, M. E. Sideltsev, E. D. Siaglova, M. M. Tepliakova, D. A. Ivanov, A. V. Akkuratov","doi":"10.1002/pssr.202400070","DOIUrl":"https://doi.org/10.1002/pssr.202400070","url":null,"abstract":"Organic semiconductor small molecules (SMs) attract much attention for the design of various emerging photovoltaic and optoelectronic devices. High charge transport characteristics of SMs are important prerequisite for achieving outstanding performance of electronics. Herein, we investigated four promising SMs in terms of modulating charge transport properties by solvent engineering. It is shown that the hole mobility of thin films based on push-pull SMs can be effectively enhanced by the replacement of chlorobenzene with environmentally preferable hexane without changing a molecular structure of the compounds. As a result, two to five times higher hole mobility was achieved for hexane-processed films that is attributed to formation of favorable nanoscale morphology of films. This effortless approach can be applied to other organic semiconductor materials to precisely control the morphology and improve their electrophysical properties.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"15 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140322293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0