Impact of sequential N ion implantation on extended defects and Mg distribution in Mg ion‐implanted GaN

IF 2.5 4区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-04-12 DOI:10.1002/pssr.202400074

Emi Kano, Jun Uzuhashi, Koki Kobayashi, Kosuke Ishikawa, Kyosuke Sawabe, Tetsuo Narita, Kacper Sierakowski, Michal Bockowski, Tadakatsu Ohkubo, Tetsu Kachi, Nobuyuki Ikarashi

{"title":"Impact of sequential N ion implantation on extended defects and Mg distribution in Mg ion‐implanted GaN","authors":"Emi Kano, Jun Uzuhashi, Koki Kobayashi, Kosuke Ishikawa, Kyosuke Sawabe, Tetsuo Narita, Kacper Sierakowski, Michal Bockowski, Tadakatsu Ohkubo, Tetsu Kachi, Nobuyuki Ikarashi","doi":"10.1002/pssr.202400074","DOIUrl":null,"url":null,"abstract":"In Mg ion implantation doping of GaN, sequential N ion implantation reportedly changes Mg concentrations in the Mg ion‐implanted region and the underlying region after activation annealing. We investigated the impact of sequential N ion implantation on defects and Mg distribution after post‐implantation annealing. Our atomic‐resolution analyses showed that, in the Mg ion‐implanted region, the N ion implantation increases the concentration of MgGa. We thus conclude that the Mg soluble in GaN by Mg ion implantation was increased by N ion implantation. The rest of the Mg atoms agglomerate to form clusters on the extended defects, and their concentration is also increased by the N implantation. The coarsening of extended defects was suppressed by the N ion implantation: the defects in the Mg+N implanted sample were nano‐scale interstitial‐type defects, and they did not grow or annihilate after annealing. This indicates that the N implantation changed the concentrations of interstitials.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"43 1","pages":""},"PeriodicalIF":2.5000,"publicationDate":"2024-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica Status Solidi-Rapid Research Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1002/pssr.202400074","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

Abstract

In Mg ion implantation doping of GaN, sequential N ion implantation reportedly changes Mg concentrations in the Mg ion‐implanted region and the underlying region after activation annealing. We investigated the impact of sequential N ion implantation on defects and Mg distribution after post‐implantation annealing. Our atomic‐resolution analyses showed that, in the Mg ion‐implanted region, the N ion implantation increases the concentration of MgGa. We thus conclude that the Mg soluble in GaN by Mg ion implantation was increased by N ion implantation. The rest of the Mg atoms agglomerate to form clusters on the extended defects, and their concentration is also increased by the N implantation. The coarsening of extended defects was suppressed by the N ion implantation: the defects in the Mg+N implanted sample were nano‐scale interstitial‐type defects, and they did not grow or annihilate after annealing. This indicates that the N implantation changed the concentrations of interstitials.This article is protected by copyright. All rights reserved.

查看原文本刊更多论文

连续 N 离子植入对镁离子植入氮化镓中扩展缺陷和镁分布的影响

据报道，在氮化镓的镁离子注入掺杂过程中，连续的 N 离子注入会改变镁离子注入区和活化退火后底层区的镁浓度。我们研究了连续 N 离子植入对植入后退火的缺陷和镁分布的影响。我们的原子分辨率分析表明，在镁离子植入区域，N 离子植入增加了 MgGa 的浓度。因此，我们得出结论：通过镁离子植入，N 离子植入增加了镁在氮化镓中的溶解度。其余的镁原子在扩展缺陷上聚集成团，其浓度也因 N 离子注入而增加。N 离子植入抑制了扩展缺陷的粗大化：Mg+N 植入样品中的缺陷是纳米级的间隙型缺陷，退火后它们没有长大或湮灭。这表明 N 植入改变了间隙的浓度。本文受版权保护。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Physica Status Solidi-Rapid Research Letters 物理-材料科学：综合

CiteScore

5.20

自引率

3.60%

发文量

208

审稿时长

1.4 months

期刊介绍： Physica status solidi (RRL) - Rapid Research Letters was designed to offer extremely fast publication times and is currently one of the fastest double peer-reviewed publication media in solid state and materials physics. Average times are 11 days from submission to first editorial decision, and 12 days from acceptance to online publication. It communicates important findings with a high degree of novelty and need for express publication, as well as other results of immediate interest to the solid-state physics and materials science community. Published Letters require approval by at least two independent reviewers. The journal covers topics such as preparation, structure and simulation of advanced materials, theoretical and experimental investigations of the atomistic and electronic structure, optical, magnetic, superconducting, ferroelectric and other properties of solids, nanostructures and low-dimensional systems as well as device applications. Rapid Research Letters particularly invites papers from interdisciplinary and emerging new areas of research.