Physica Status Solidi-Rapid Research Letters最新文献_第8页

A High Channel Mobility and a Normally‐off Operation of a Vertical GaN MOSFET Using an AlSiO/AlN Gate Stack Structure on m‐plane Trench Sidewall m 平面沟槽侧壁上使用氧化铝/氮化铝栅极叠层结构的垂直 GaN MOSFET 的高沟道迁移率和常关断操作

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-03-23 DOI: 10.1002/pssr.202400010

Masakazu Kanechika, Kenji Ito, Tetsuo Narita, Kazuyoshi Tomita, Shiro Iwasaki, Daigo Kikuta, Tetsu Kachi

{"title":"A High Channel Mobility and a Normally‐off Operation of a Vertical GaN MOSFET Using an AlSiO/AlN Gate Stack Structure on m‐plane Trench Sidewall","authors":"Masakazu Kanechika, Kenji Ito, Tetsuo Narita, Kazuyoshi Tomita, Shiro Iwasaki, Daigo Kikuta, Tetsu Kachi","doi":"10.1002/pssr.202400010","DOIUrl":"https://doi.org/10.1002/pssr.202400010","url":null,"abstract":"We previously developed an AlSiO/AlN‐interlayer gate stack formed on c‐plane GaN metal‐oxide‐semiconductor (MOS) devices to enhance the interface of the gate insulator. By utilizing this gate stack structure, we obtained a channel mobility of over 200 cm2/Vs on c‐plane. However, the threshold voltage was negative because of the polarization charge at the AlN/GaN interface. This study extends the application of this gate stack structure to the nonpolar m‐plane, which is obtained from a trench sidewall. We successfully achieve both a high channel mobility of 150 cm2/Vs and a threshold voltage of 1.3 V, normally‐off operation. This achievement holds significant promise for the gate structure of a GaN trench‐gate MOS field‐effect transistor. The limiting factor of the channel mobility is Coulomb scattering in a low electric field, whereas surface roughness scattering is dominant in a higher field.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"30 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140197923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Metastability in Dark Current Diode Characteristics of Chalcogenide Photovoltaic Modules 卤化铝光伏组件暗电流二极管特性的易变性

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-03-23 DOI: 10.1002/pssr.202300239

Bettina Friedel

{"title":"Metastability in Dark Current Diode Characteristics of Chalcogenide Photovoltaic Modules","authors":"Bettina Friedel","doi":"10.1002/pssr.202300239","DOIUrl":"https://doi.org/10.1002/pssr.202300239","url":null,"abstract":"While present trends in commercial PV are set on a‐Si/c‐Si heterojunctions and promising perovskites, the chalcogenides still attract interest as an excellent candidate for coming multi‐ and heterojunction devices with perovskites. Continuously enhanced over the years, typical metastabilities in thin film devices still remain, causing issues under outdoor operation. Unfortunately, qualitative assessment in commercial PV is solely focused on data at the maximum power point of its operation, whether in simple on‐site PV plant monitoring or following latest standards for certified laboratory testing, thus metastabilities merely register as undefined power fluctuations. We show in this study that dark current characteristics are a simple and yet field‐fit method, to identify metastable changes and take suitable counter measures. With this study, using commercial CdTe and CIGS showcase modules of various manufacturers and production generations, we demonstrate how dark current characteristics allow to pin‐point physical changes of the individual module, between its pristine state, outdoor operation, dark degradation and stabilization, like a fingerprint. Using the two‐diode model, we show that alterations to respective regimes of the characteristic can be assigned to typical defects, defining the module’s current state, and be used to it as a guide to evaluate its recuperation via preconditioning treatments.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"29 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140197704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High‐Performance of Self‐Powered UV‐Visible CdS (PVP)/PbI2 Heterojunction Photodetector 高性能自供电紫外可见 CdS（PVP）/PbI2 异质结光电探测器

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-03-23 DOI: 10.1002/pssr.202400009

Lei Yang, Mingkun Huang, Yue Wang, Yuanhao Kang, Le Wang, Niumiao Zhang

{"title":"High‐Performance of Self‐Powered UV‐Visible CdS (PVP)/PbI2 Heterojunction Photodetector","authors":"Lei Yang, Mingkun Huang, Yue Wang, Yuanhao Kang, Le Wang, Niumiao Zhang","doi":"10.1002/pssr.202400009","DOIUrl":"https://doi.org/10.1002/pssr.202400009","url":null,"abstract":"In this work, the PVP‐assisted CdS/PbI2 heterojunction UV‐Visible Photodetector was constructed by the sol‐gel spin coating method. The X‐ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectrometer (EDS) demonstrated the synthesis and successful complexation of PVP, CdS, and PbI2. The UV‐Visible absorption spectroscopy and UV photoelectron spectroscopy (UPS) measurements of CdS and PbI2 were carried out to prove that the CdS and PbI2 form a type II heterojunction. Compared with pure CdS film photodetector, the CdS (PVP)/PbI2 heterojunction photodetector has self‐powered characteristics, and exhibits excellent photoconductivity in the UV‐Visible with higher switching ratios, detection rates, and faster response times of 1.1 × 105, 9.77 × 1011 Jones and 20 ms, respectively, which has great potential in the field of UV‐Visible self‐powered photodetector.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"25 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140197634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High performance amorphous IGO TFTs grown at low temperature 低温生长的高性能非晶 IGO TFT

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-03-19 DOI: 10.1002/pssr.202300457

Chuan Peng, Han He, Hao Huang, Yongyuan Shang, Zipeng Feng, Zhipeng Zhang, Chunlan Wang, Bingsuo Zou, Liu Xingqiang

{"title":"High performance amorphous IGO TFTs grown at low temperature","authors":"Chuan Peng, Han He, Hao Huang, Yongyuan Shang, Zipeng Feng, Zhipeng Zhang, Chunlan Wang, Bingsuo Zou, Liu Xingqiang","doi":"10.1002/pssr.202300457","DOIUrl":"https://doi.org/10.1002/pssr.202300457","url":null,"abstract":"Polycrystalline indium gallium oxide has been widely studied in the domain of oxide thin film transistors (TFTs) due to its high mobility. However, there are few researches focus on amorphous IGO (a‐IGO), which has the advantage of large area display. Herein, high‐performance a‐IGO TFTs are demonstrated by magnetron sputtering method with simple process. The efficiency of a‐IGO TFTs fabricated under various conditions are evaluated, and a‐IGO TFTs prepared by 27 nm thin films grown at 220 °C have the best electrical properties. It exhibits the mobility of 35 cm2 V‐1 s‐1, threshold voltage of 0.5 V, subthreshold swing of 0.8 V/dec, and the on/off current ratio over 106. This is due to the precise control of the deposition energy state by temperature during sputtering and the influence of the semiconductor layer thickness on the distribution of the accumulation layer. The results present here demonstrate a simple fabrication method for high‐performance amorphous oxide thin film transistors, providing a new option for display driver circuits.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"26 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140166464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electroluminescence from Silicon‐Based Light‐Emitting Devices with Erbium‐Doped Ta2O5 Films 掺铒 Ta2O5 薄膜硅基发光器件的电致发光性能

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-03-18 DOI: 10.1002/pssr.202400045

Chengtao Xia, Ziwei Wang, Shuming Jiang, Ran Ji, Linlin Lu, Deren Yang, Xiangyang Ma

{"title":"Electroluminescence from Silicon‐Based Light‐Emitting Devices with Erbium‐Doped Ta2O5 Films","authors":"Chengtao Xia, Ziwei Wang, Shuming Jiang, Ran Ji, Linlin Lu, Deren Yang, Xiangyang Ma","doi":"10.1002/pssr.202400045","DOIUrl":"https://doi.org/10.1002/pssr.202400045","url":null,"abstract":"The visible and near‐infrared electroluminescence (EL) from the light‐emitting device (LED) based on the erbium (Er)‐doped Ta2O5 (Ta2O5:Er)/SiO2/Si structure is reported in this study. Wherein, an ∽10 nm thick SiO2 intermediate layer serves as an energy plateau for forming hot electrons, which initially transport from Si via trap‐assisted tunneling mechanism under sufficiently forward bias with the negative voltage connecting with Si. The hot electrons impact‐excite the Er3+ ions incorporated into the Ta2O5 host, leading to the Er‐related EL from the aforementioned LED. It is found that the 750 °C ‐ annealed Ta2O5:Er films are desirable to act as the light‐emitting component. Despite that the Er‐related photoluminescence from the Ta2O5:Er film becomes stronger in turn with the Er‐doping content increasing from nominal 0.75, 1.5 to 3 mol %, it is the Ta2O5:Er film with Er‐doping content of nominal 1.5 mol % rather than 3 mol % that enables the LED to exhibit the strongest EL. Based on the EL lifetime measurement and the structural characterizations, it is believed that the enhanced non‐radiative interactions among the Er3+ ions and the substantial amorphousness of Ta2O5 host caused by the nominal 3 mol % Er‐doping are responsible for the weakened EL as mentioned above.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"2013 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140151993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Topologically protected synthesizing of Fock states in a circuit QED architecture 电路 QED 架构中受拓扑保护的福克态合成

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-03-16 DOI: 10.1002/pssr.202300478

Wei Xin, Xiang-min Yu, Kun Zhou, Shaoxiong Li, Yang Yu

引用次数: 0

True‐Red InGaN Light‐Emitting Diodes for Display Applications 用于显示应用的真彩色 InGaN 发光二极管

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-03-16 DOI: 10.1002/pssr.202400012

Robert Armitage, Zhongmin Ren, Mark Holmes, Joseph Flemish

{"title":"True‐Red InGaN Light‐Emitting Diodes for Display Applications","authors":"Robert Armitage, Zhongmin Ren, Mark Holmes, Joseph Flemish","doi":"10.1002/pssr.202400012","DOIUrl":"https://doi.org/10.1002/pssr.202400012","url":null,"abstract":"Red InGaN has attracted much attention recently for microLED display applications. However, the consequences of spectral broadening are often overlooked and many of the published spectra do not meet display gamut requirements. We focus on maximizing the red InGaN radiance with a spectrum capable of meeting the DCI‐P3 standard (dominant wavelength of ∽615 nm). The maximum radiance for LEDs meeting said requirement is obtained at 20 A/cm2 and corresponds to 4% WPE in large‐area encapsulated devices. The WPE can be increased to 12.5% using epitaxy of lower In concentration driven at 2 A/cm2. We also report data for microLEDs fabricated from similar red InGaN epitaxy. No size dependence of the IQE or spectra are observed down to the smallest sizes studied (∽2 microns). We have further leveraged our expertise with red InGaN and nitride tunnel junctions to demonstrate polychromatic microLEDs with independent control of red, green, and blue emission within single pixels of 9x12 micron dimensions. These devices are grown in a single growth run on the same sapphire substrate wafer using methods proven in high‐volume epitaxy manufacturing.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"74 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140152085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optical properties of low‐defect large‐area h–BN for quantum applications 用于量子应用的低缺陷大面积 h-BN 的光学特性

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-03-14 DOI: 10.1002/pssr.202400034

Shrivatch Sankar, Shantanu Saha, Jia-Shiang Chen, Shih-Po Chien, YannWen Lan, Xuedan Ma, Michael Snure, Shamsul Arafin

{"title":"Optical properties of low‐defect large‐area h–BN for quantum applications","authors":"Shrivatch Sankar, Shantanu Saha, Jia-Shiang Chen, Shih-Po Chien, YannWen Lan, Xuedan Ma, Michael Snure, Shamsul Arafin","doi":"10.1002/pssr.202400034","DOIUrl":"https://doi.org/10.1002/pssr.202400034","url":null,"abstract":"Intrinsic defects and their concentrations in hexagonal boron nitride play a key role in single photon emission. This study explores the optical properties of large‐area multilayer h–BN‐on‐sapphire grown by metalorganic chemical vapor deposition. Based on our detailed spectroscopic characterization using both cathodoluminescence and photoluminescence measurements, the material is devoid of random single‐point defects instead of a few clustered complex defects. The emission spectra of the measurements confirm a record‐low defect concentration of ∽104 cm‐2. Post‐annealing, no significant changes are observed in the measured spectra and the defect concentrations remain unaltered. Through cathodoluminescence and photoluminescence spectroscopy, we identify an optically active boron vacancy spin defect and reveal a novel complex defect combination arising from carbon impurities. This complex defect, previously unreported, signifies a unique aspect of our material. Our findings contribute to the understanding of defect‐induced optical properties in h–BN films, providing insights for potential applications in quantum information science.This article is protected by copyright. All rights reserved.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"24 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140156383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge1−xSnx Microdisks 应变、锡含量和温度对 Ge1-xSnx 微晶盘空间依赖性带隙的相互作用

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-03-13 DOI: 10.1002/pssr.202470005

Ignatii Zaitsev, Agnieszka Anna Corley-Wiciak, Cedric Corley-Wiciak, Marvin Hartwig Zoellner, Carsten Richter, Edoardo Zatterin, Michele Virgilio, Beatriz Martín-García, Davide Spirito, Costanza Lucia Manganelli

引用次数: 0

GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices 蓝宝石和氮化镓衬底上的氮化镓漂移层，用于 1.2 kV 级垂直功率器件

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-03-10 DOI: 10.1002/pssr.202400013

Frank Brunner, Enrico Brusaterra, Eldad Bahat‐Treidel, Oliver Hilt, Markus Weyers

{"title":"GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices","authors":"Frank Brunner, Enrico Brusaterra, Eldad Bahat‐Treidel, Oliver Hilt, Markus Weyers","doi":"10.1002/pssr.202400013","DOIUrl":"https://doi.org/10.1002/pssr.202400013","url":null,"abstract":"The development of processes for epitaxial growth of vertical gallium nitride (GaN) drift layers enabling 1.2 kV breakdown voltage on low‐cost sapphire substrates is presented in comparison to GaN bulk substrates. The targeted blocking capability demands drift layers with a thickness of 10 μm and low but controllable n‐type doping. Using a growth rate of 2.5 μm h−1 the concentration of unintentionally incorporated carbon is sufficiently low to adjust the n‐type carrier concentration to ≈1 × 1016 cm−3 for all types of substrates. To assess GaN drift region properties in terms of forward bias conductivity and reverse bias blocking strength, a quasi‐vertical p‐n‐diode structure is utilized. Bow reduction of GaN‐on‐sapphire structures is achieved using a stealth laser scribing process. Breakdown voltages higher than 1600 V and a specific on‐state resistance as low as 0.7 mΩ cm2 are obtained with diodes fabricated on GaN substrates. Similar structures grown on sapphire show breakdown voltages of about 1300 V due to higher levels of current leakage. Comparing different types of substrates, a direct correlation between dislocation density in the drift layer with the leakage current in p‐n diodes is deduced.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"16 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140098128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0