Optical properties of low‐defect large‐area h–BN for quantum applications

IF 2.5 4区 物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Shrivatch Sankar, Shantanu Saha, Jia-Shiang Chen, Shih-Po Chien, Yann­Wen Lan, Xuedan Ma, Michael Snure, Shamsul Arafin
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Abstract

Intrinsic defects and their concentrations in hexagonal boron nitride play a key role in single photon emission. This study explores the optical properties of large‐area multilayer h–BN‐on‐sapphire grown by metalorganic chemical vapor deposition. Based on our detailed spectroscopic characterization using both cathodoluminescence and photoluminescence measurements, the material is devoid of random single‐point defects instead of a few clustered complex defects. The emission spectra of the measurements confirm a record‐low defect concentration of ∽104 cm‐2. Post‐annealing, no significant changes are observed in the measured spectra and the defect concentrations remain unaltered. Through cathodoluminescence and photoluminescence spectroscopy, we identify an optically active boron vacancy spin defect and reveal a novel complex defect combination arising from carbon impurities. This complex defect, previously unreported, signifies a unique aspect of our material. Our findings contribute to the understanding of defect‐induced optical properties in h–BN films, providing insights for potential applications in quantum information science.This article is protected by copyright. All rights reserved.
用于量子应用的低缺陷大面积 h-BN 的光学特性
六方氮化硼中的内在缺陷及其浓度在单光子发射中起着关键作用。本研究探讨了通过金属有机化学气相沉积法在蓝宝石上生长的大面积多层 h-BN 的光学特性。根据我们使用阴极发光和光致发光测量方法进行的详细光谱表征,该材料不存在随机单点缺陷,而是存在一些成簇的复杂缺陷。测量结果的发射光谱证实了∽104 cm-2 的创纪录低缺陷浓度。退火后,测量到的光谱没有明显变化,缺陷浓度也保持不变。通过阴极发光和光致发光光谱,我们确定了一种光学活性硼空位自旋缺陷,并揭示了一种由碳杂质引起的新型复合缺陷组合。这种复杂缺陷以前从未报道过,它标志着我们材料的一个独特方面。我们的发现有助于理解 h-BN 薄膜中缺陷诱导的光学特性,为量子信息科学的潜在应用提供了启示。本文受版权保护。
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来源期刊
Physica Status Solidi-Rapid Research Letters
Physica Status Solidi-Rapid Research Letters 物理-材料科学:综合
CiteScore
5.20
自引率
3.60%
发文量
208
审稿时长
1.4 months
期刊介绍: Physica status solidi (RRL) - Rapid Research Letters was designed to offer extremely fast publication times and is currently one of the fastest double peer-reviewed publication media in solid state and materials physics. Average times are 11 days from submission to first editorial decision, and 12 days from acceptance to online publication. It communicates important findings with a high degree of novelty and need for express publication, as well as other results of immediate interest to the solid-state physics and materials science community. Published Letters require approval by at least two independent reviewers. The journal covers topics such as preparation, structure and simulation of advanced materials, theoretical and experimental investigations of the atomistic and electronic structure, optical, magnetic, superconducting, ferroelectric and other properties of solids, nanostructures and low-dimensional systems as well as device applications. Rapid Research Letters particularly invites papers from interdisciplinary and emerging new areas of research.
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