Physica Status Solidi-Rapid Research Letters最新文献_第2页

Study on Thermal and Luminescence Properties of YAG:Ce Ceramics Excited by High‐Power Fiber Laser with the Condition of a Water‐Cooling Package 在水冷套条件下研究高功率光纤激光器激发的 YAG：Ce 陶瓷的热特性和发光特性

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-08-28 DOI: 10.1002/pssr.202400143

Lichao Wang, Yang Li, Xindi Li, Yiwei Zhu, Jian Kang, Le Zhang, Cen Shao, Jun Zou

{"title":"Study on Thermal and Luminescence Properties of YAG:Ce Ceramics Excited by High‐Power Fiber Laser with the Condition of a Water‐Cooling Package","authors":"Lichao Wang, Yang Li, Xindi Li, Yiwei Zhu, Jian Kang, Le Zhang, Cen Shao, Jun Zou","doi":"10.1002/pssr.202400143","DOIUrl":"https://doi.org/10.1002/pssr.202400143","url":null,"abstract":"A high‐power white laser source is prepared by using a 455 nm blue laser to excite YAG:Ce ceramics. To achieve high‐power output, a water‐cooling device is used to reduce the operating temperature of ceramics. The luminescence properties of laser‐excited phosphor ceramics are studied under different blue excitation power and different irradiation time. The experimental results show that the luminous flux of phosphor ceramics excited by the blue laser increases linearly with the increase of blue laser power, depending on the heat dissipation of the water‐cooling device. When the blue laser power increases to 73.1 W, the phosphor ceramics do not reach the luminescence saturation state. The luminous flux of phosphor ceramics excited by 73.1 W blue laser is stable within 60 min. The maximum luminous flux is 8094 lm, and the maximum working temperature of the ceramics is 110 °C. The experimental results show that water‐cooling packages are an effective means to realize high‐power white laser sources.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"64 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142210994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Emergence of Superconductivity in Indium Triphosphate via Pressure‐Tuned Interlayer Bond Formation 通过压力调节的层间键形成实现三磷酸铟的超导性

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-08-28 DOI: 10.1002/pssr.202400206

Hao Ding, Jingyu Hou, Kun Zhai, Xin Gao, Zhiwei Shen, Junquan Huang, Bingchao Yang, Feng Ke, Congpu Mu, Fusheng Wen, Jianyong Xiang, Bochong Wang, Tianyu Xue, Anmin Nie, Xiaobing Liu, Lin Wang, Xiang‐Feng Zhou, Zhongyuan Liu

{"title":"Emergence of Superconductivity in Indium Triphosphate via Pressure‐Tuned Interlayer Bond Formation","authors":"Hao Ding, Jingyu Hou, Kun Zhai, Xin Gao, Zhiwei Shen, Junquan Huang, Bingchao Yang, Feng Ke, Congpu Mu, Fusheng Wen, Jianyong Xiang, Bochong Wang, Tianyu Xue, Anmin Nie, Xiaobing Liu, Lin Wang, Xiang‐Feng Zhou, Zhongyuan Liu","doi":"10.1002/pssr.202400206","DOIUrl":"https://doi.org/10.1002/pssr.202400206","url":null,"abstract":"Tuning interlayer interactions offer an alternative approach to access novel electronic structure and intriguing physical properties in layered materials. Here, the emergence of a new form of superconductivity in two‐dimensional (2D) binary phosphides by strengthening the interlayer coupling with lattice compression is reported. Electrical transport measurements show strong evidence of superconductivity in InP3 with the highest critical temperature (Tc) of 9.5 K at 45.1 GPa. Raman and X‐ray diffraction (XRD) measurements indicate that the interlayer interactions are dramatically modulated under compression, along with the deformation of local In–P bipyramid structure and reduction of the interlayer distances, which eventually results in the formation of In–P bonds between neighboring In–P bipyramids and a Rm to Cmcm structural transition. First‐principles density functional theory (DFT) calculations reveal that pressure enhances the interlayer interactions, which increases the density of states (DOS) near the Fermi surface (N(EF)) and strengthens the electron–phonon coupling. Consequently, this favors the occurrence of superconductivity in compressed InP3. This study not only introduces a new superconductivity phase with enhanced electron–phonon coupling in binary phosphides, but also provides a platform for exploring the pressure effect on interlayer interactions in material systems with corrugated layered structure.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"45 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142211030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Unveiling the Reactivity of Oxygen and Ozone on C2N Monolayer 揭示氧气和臭氧在 C2N 单层上的反应活性

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-08-22 DOI: 10.1002/pssr.202400148

Soumendra Kumar Das, Lokanath Patra, Prasanjit Samal, Pratap Kumar Sahoo

{"title":"Unveiling the Reactivity of Oxygen and Ozone on C2N Monolayer","authors":"Soumendra Kumar Das, Lokanath Patra, Prasanjit Samal, Pratap Kumar Sahoo","doi":"10.1002/pssr.202400148","DOIUrl":"https://doi.org/10.1002/pssr.202400148","url":null,"abstract":"Understanding the interaction of various environmental oxidizing agents is important in determining the physical and chemical properties of 2D materials. Its impact holds great significance for the practical application of these materials in nanoscale devices functioning under ambient conditions. This study delves into the influence of O2 and O3 exposure on the structural and electronic characteristics of the C2N monolayer, focusing on the kinetics of adsorption and dissociation reactions. Employing first‐principles density‐functional theory calculations alongside climbing image nudged elastic band calculations, it is observed that the monolayer exhibits resistance to ozonation, evidenced by energy barriers of 0.56 eV. These processes are accompanied by the formation of COC groups. Furthermore, the dissociation mechanism involves charge transfers from the monolayer to the molecules. Notably, the dissociated configurations demonstrate higher bandgaps compared to the pristine monolayer, attributed to robust CO hybridization. These findings suggest the robustness of C2N monolayers against oxygen/ozone exposures, ensuring stability for devices incorporating these materials.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"80 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142210995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Heteroepitaxial α‐Ga2O3 Thin Film‐Based X‐Ray Detector with Metal–Semiconductor–Metal Structure 基于异质外延α-Ga2O3 薄膜的金属-半导体-金属结构 X 射线探测器

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-08-07 DOI: 10.1002/pssr.202400193

Minje Kim, Sunjae Kim, Ji‐Hyeon Park, Hyeon Gu Cho, Se Hoon Gihm, Dae‐Woo Jeon, Wan Sik Hwang

{"title":"Heteroepitaxial α‐Ga2O3 Thin Film‐Based X‐Ray Detector with Metal–Semiconductor–Metal Structure","authors":"Minje Kim, Sunjae Kim, Ji‐Hyeon Park, Hyeon Gu Cho, Se Hoon Gihm, Dae‐Woo Jeon, Wan Sik Hwang","doi":"10.1002/pssr.202400193","DOIUrl":"https://doi.org/10.1002/pssr.202400193","url":null,"abstract":"This study explores the potential of 700‐nm‐thick heteroepitaxial α‐Ga2O3 thin films on c‐plane sapphire substrates for X‐ray detector applications. The crystal quality and optical bandgap of the heteroepitaxial α‐Ga2O3 thin films are comparable to those of high‐quality α‐Ga2O3 thin films. The α‐Ga2O3 thin film X‐ray detector with a metal–semiconductor–metal structure exhibits a charge neutral point shift, resulting in a short‐circuit current density of 9.07 nA cm−2 and an open‐circuit voltage of –1.2 V. The detector achieves the highest signal‐to‐noise ratio of 973 at 0 V, while the maximum sensitivity (14.7 μC Gyair−1 cm−2) occurs at 10 V. The proposed X‐ray detector demonstrates a reliable transient response and long‐term robustness, suggesting the promise of heteroepitaxial α‐Ga2O3 for low‐cost, high‐quality, large‐area X‐ray detectors.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"83 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141930344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Atomic Layer Deposition of Hafnium Oxide Passivating Layers on Silicon: Impact of Precursor Selection 硅上氧化铪钝化层的原子层沉积：前驱体选择的影响

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-08-07 DOI: 10.1002/pssr.202400202

Sophie L. Pain, Anup Yadav, David Walker, Nicholas E. Grant, John D. Murphy

{"title":"Atomic Layer Deposition of Hafnium Oxide Passivating Layers on Silicon: Impact of Precursor Selection","authors":"Sophie L. Pain, Anup Yadav, David Walker, Nicholas E. Grant, John D. Murphy","doi":"10.1002/pssr.202400202","DOIUrl":"https://doi.org/10.1002/pssr.202400202","url":null,"abstract":"Hafnium oxide (HfOx) films grown by atomic layer deposition (ALD) have recently been demonstrated to provide high‐quality silicon surface passivation. Reports have suggested that changing the composition of the hafnium‐containing precursor can enable films of both charge polarities to be produced. Herein, the passivation quality of hafnium oxide grown with metal amide precursors and a tetrakis(ethylmethylamido)hafnium (TEMAHf) precursor is examined, considering film charge polarity, chemical‐ and field‐based passivation effects, and film crystallinity. Throughout, the properties of TEMAHf‐HfOx are benchmarked against that of hafnium oxide grown with a tetrakis(dimethylamido)hafnium precursor. It is found that precursor choice has no influence on the fixed negative charge polarity (of order −1012 q cm−2) of HfOx films grown via plasma‐enhanced ALD. TEMAHf‐HfOx passivation is influenced by post‐deposition annealing temperature and can passivate with a surface recombination velocity ≤3 cm s−1 on n‐type silicon, compared to surface recombination velocities ≤11 cm s−1 for TDMAHf‐HfOx of a similar thickness.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"43 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141930441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electronic Structure Evolution in the Temperature Range of Metal–Insulator Transitions on Sn/Ge(111) 锡/锗(111)上金属-绝缘体转变温度范围内的电子结构演变

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-08-06 DOI: 10.1002/pssr.202470020

Maya N. Nair, Irene Palacio, Yoshiyuki Ohtsubo, Amina Taleb‐Ibrahimi, Enrique G. Michel, Arantzazu Mascaraque, Antonio Tejeda

引用次数: 0

Theoretical and Experimental Study of High‐Electromechanical‐Coupling Surface Acoustic Wave Resonators Based on A‐Plane (112¯0)$left(right. 11 overset{cdot}{2} 0 left.right)$ Al0.56Sc0.44N Films 基于 A 平面 (112¯0)$left(right. 11 overset{cdot}{2} 0 left.right)$ Al0.56Sc0.44N 薄膜的高机电耦合表面声波谐振器的理论与实验研究

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-08-06 DOI: 10.1002/pssr.202470018

Weilun Xie, Weipeng Xuan, Danyang Fu, Yingqi Jiang, Qikun Wang, Xingli He, Liang Wu, Jinkai Chen, Shurong Dong, Hao Jin, Jikui Luo

引用次数: 0

Study of Migration Behavior and Optical Properties of Self‐Trapped Hole by Hydrogen Vacancy in KH2PO4 Crystal KH2PO4 晶体中氢空位自捕空穴的迁移行为和光学特性研究

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-08-05 DOI: 10.1002/pssr.202400184

Jinsong Jiang, Wei Hong, Tingyu Liu, Wenqi Song, Liying Yang

引用次数: 0

Magnetism of Iron Oxide Nanoparticles: From Atomic Order to Complexity at the Mesoscopic Scale 氧化铁纳米粒子的磁性：从原子秩序到介观尺度的复杂性

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-08-02 DOI: 10.1002/pssr.202400059

Marie Darcheville, Anne‐Lise Adenot‐Engelvin, Christophe Boscher, Jean‐Marc Grenèche, Christophe Lefèvre, Jérôme Robert, Ovidiu Ersen, José Maria Gonzalez Calbet, Maria Luisa Ruiz Gonzalez, André Thiaville, Clément Sanchez

{"title":"Magnetism of Iron Oxide Nanoparticles: From Atomic Order to Complexity at the Mesoscopic Scale","authors":"Marie Darcheville, Anne‐Lise Adenot‐Engelvin, Christophe Boscher, Jean‐Marc Grenèche, Christophe Lefèvre, Jérôme Robert, Ovidiu Ersen, José Maria Gonzalez Calbet, Maria Luisa Ruiz Gonzalez, André Thiaville, Clément Sanchez","doi":"10.1002/pssr.202400059","DOIUrl":"https://doi.org/10.1002/pssr.202400059","url":null,"abstract":"Zn‐substituted iron oxide nanoparticles of ≈5 nm in diameter are synthetized by a microwave‐assisted thermal decomposition method. The addition of ethylene glycol results in a size increase to 22 nm. Cationic disorder has been observed by electron energy loss spectroscopy–scanning transmission electron microscopy. Using Mössbauer spectrometry combined with Rietveld analysis, the complete cationic and vacancies repartition in the lattice is determined, as well as the canting of magnetic moments. This allows the magnetic moment to be calculated, in good agreement with that measured. The alternating current magnetic susceptibility is modeled by the Néel–Brown and the Coffey models, showing some discrepancy between these two approaches which is discussed. The largest particles show a complex morphology involving an oriented attachment mechanism of smaller units. Their cationic disorder and internal porosity have been evidenced and quantified, and the work shows that despite these defects they behave rather as magnetically blocked nanoparticles.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"45 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141882781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Epitaxial AlBN/β‐Nb2N Ferroelectric/Superconductor Heterostructures 外延 AlBN/β-Nb2N 铁电/超导体异质结构

IF 2.8 4区物理与天体物理

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-07-25 DOI: 10.1002/pssr.202400157

Chandrashekhar Savant, Thai‐Son Nguyen, Saurabh Vishwakarma, Joongwon Lee, Anand Ithepalli, Yu‐Hsin Chen, Kazuki Nomoto, Farhan Rana, David J. Smith, Huili Grace Xing, Debdeep Jena

{"title":"Epitaxial AlBN/β‐Nb2N Ferroelectric/Superconductor Heterostructures","authors":"Chandrashekhar Savant, Thai‐Son Nguyen, Saurabh Vishwakarma, Joongwon Lee, Anand Ithepalli, Yu‐Hsin Chen, Kazuki Nomoto, Farhan Rana, David J. Smith, Huili Grace Xing, Debdeep Jena","doi":"10.1002/pssr.202400157","DOIUrl":"https://doi.org/10.1002/pssr.202400157","url":null,"abstract":"We report the growth of AlBN/β‐Nb2N nitride epitaxial heterostructures in which the AlBN is ferroelectric, and β‐Nb2N with metallic resistivity ≈40 μ at 300 K becomes superconducting below TC ≈ 0.5 K. Using nitrogen plasma molecular beam epitaxy, we grow hexagonal β‐Nb2N films on c‐plane Al2O3 substrates, followed by wurtzite AlBN. The AlBN is in epitaxial registry and rotationally aligned with the β‐Nb2N, and the hexagonal lattices of both nitride layers make angles of 30° with the hexagonal lattice of the Al2O3 substrate. The B composition of the AlBN layer is varied from 0 to 14.7%. It is found to depend weakly on the B flux, but increases strongly with decreasing growth temperature, indicating a reaction rate‐controlled growth. The increase in B content causes a non‐monotonic change in the a‐lattice constant and a monotonic decrease in the c‐lattice constant of AlBN. Sharp, abrupt epitaxial AlBN/β‐Nb2N/Al2O3 heterojunction interfaces and close symmetry matching are observed by transmission electron microscopy. The observation of ferroelectricity and superconductivity in epitaxial nitride heterostructures opens avenues for novel electronic and quantum devices.","PeriodicalId":54619,"journal":{"name":"Physica Status Solidi-Rapid Research Letters","volume":"136 1","pages":""},"PeriodicalIF":2.8,"publicationDate":"2024-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141780860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0