硅上氧化铪钝化层的原子层沉积：前驱体选择的影响

IF 2.5 4区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-08-07 DOI:10.1002/pssr.202400202

Sophie L. Pain, Anup Yadav, David Walker, Nicholas E. Grant, John D. Murphy

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引用次数: 0

摘要

通过原子层沉积（ALD）技术生长的氧化铪（HfOx）薄膜最近被证明可以提供高质量的硅表面钝化。有报告指出，改变含铪前驱体的成分可以生产出两种电荷极性的薄膜。在此，考虑到薄膜的电荷极性、化学和电场钝化效应以及薄膜的结晶度，研究了用金属酰胺前驱体和四(乙基甲基氨基)铪（TEMAHf）前驱体生长的氧化铪的钝化质量。在整个研究过程中，TEMAHf-HfOx 的特性与使用四（二甲基氨基）铪前驱体生长的氧化铪的特性进行了比较。结果发现，前驱体的选择对通过等离子体增强 ALD 生长的氧化铪薄膜的固定负电荷极性（数量级为 -1012 q cm-2）没有影响。TEMAHf-HfOx 的钝化受沉积后退火温度的影响，在 n 型硅上的表面钝化重组速度≤3 cm s-1，而类似厚度的 TDMAHf-HfOx 的表面重组速度≤11 cm s-1。

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Atomic Layer Deposition of Hafnium Oxide Passivating Layers on Silicon: Impact of Precursor Selection

Hafnium oxide (HfOx) films grown by atomic layer deposition (ALD) have recently been demonstrated to provide high‐quality silicon surface passivation. Reports have suggested that changing the composition of the hafnium‐containing precursor can enable films of both charge polarities to be produced. Herein, the passivation quality of hafnium oxide grown with metal amide precursors and a tetrakis(ethylmethylamido)hafnium (TEMAHf) precursor is examined, considering film charge polarity, chemical‐ and field‐based passivation effects, and film crystallinity. Throughout, the properties of TEMAHf‐HfOx are benchmarked against that of hafnium oxide grown with a tetrakis(dimethylamido)hafnium precursor. It is found that precursor choice has no influence on the fixed negative charge polarity (of order −1012 q cm−2) of HfOx films grown via plasma‐enhanced ALD. TEMAHf‐HfOx passivation is influenced by post‐deposition annealing temperature and can passivate with a surface recombination velocity ≤3 cm s−1 on n‐type silicon, compared to surface recombination velocities ≤11 cm s−1 for TDMAHf‐HfOx of a similar thickness.

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来源期刊

Physica Status Solidi-Rapid Research Letters 物理-材料科学：综合

CiteScore

5.20

自引率

3.60%

发文量

208

审稿时长

1.4 months

期刊介绍： Physica status solidi (RRL) - Rapid Research Letters was designed to offer extremely fast publication times and is currently one of the fastest double peer-reviewed publication media in solid state and materials physics. Average times are 11 days from submission to first editorial decision, and 12 days from acceptance to online publication. It communicates important findings with a high degree of novelty and need for express publication, as well as other results of immediate interest to the solid-state physics and materials science community. Published Letters require approval by at least two independent reviewers. The journal covers topics such as preparation, structure and simulation of advanced materials, theoretical and experimental investigations of the atomistic and electronic structure, optical, magnetic, superconducting, ferroelectric and other properties of solids, nanostructures and low-dimensional systems as well as device applications. Rapid Research Letters particularly invites papers from interdisciplinary and emerging new areas of research.