Heteroepitaxial α‐Ga2O3 Thin Film‐Based X‐Ray Detector with Metal–Semiconductor–Metal Structure

IF 2.5 4区物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY

Physica Status Solidi-Rapid Research Letters Pub Date : 2024-08-07 DOI:10.1002/pssr.202400193

Minje Kim, Sunjae Kim, Ji‐Hyeon Park, Hyeon Gu Cho, Se Hoon Gihm, Dae‐Woo Jeon, Wan Sik Hwang

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Abstract

This study explores the potential of 700‐nm‐thick heteroepitaxial α‐Ga2O3 thin films on c‐plane sapphire substrates for X‐ray detector applications. The crystal quality and optical bandgap of the heteroepitaxial α‐Ga2O3 thin films are comparable to those of high‐quality α‐Ga2O3 thin films. The α‐Ga2O3 thin film X‐ray detector with a metal–semiconductor–metal structure exhibits a charge neutral point shift, resulting in a short‐circuit current density of 9.07 nA cm−2 and an open‐circuit voltage of –1.2 V. The detector achieves the highest signal‐to‐noise ratio of 973 at 0 V, while the maximum sensitivity (14.7 μC Gyair−1 cm−2) occurs at 10 V. The proposed X‐ray detector demonstrates a reliable transient response and long‐term robustness, suggesting the promise of heteroepitaxial α‐Ga2O3 for low‐cost, high‐quality, large‐area X‐ray detectors.

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基于异质外延α-Ga2O3 薄膜的金属-半导体-金属结构 X 射线探测器

本研究探讨了在 c 平面蓝宝石基底上的 700 纳米厚异质外延 α-Ga2O3 薄膜在 X 射线探测器中的应用潜力。异质外延 α-Ga2O3 薄膜的晶体质量和光带隙与高质量 α-Ga2O3 薄膜相当。金属-半导体-金属结构的α-Ga2O3 薄膜 X 射线探测器表现出电荷中性点偏移，其短路电流密度为 9.07 nA cm-2，开路电压为-1.2 V。所提出的 X 射线探测器具有可靠的瞬态响应和长期稳健性，表明异质外延 α-Ga2O3 在低成本、高质量、大面积 X 射线探测器方面大有可为。

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来源期刊

Physica Status Solidi-Rapid Research Letters 物理-材料科学：综合

CiteScore

5.20

自引率

3.60%

发文量

208

审稿时长

1.4 months

期刊介绍： Physica status solidi (RRL) - Rapid Research Letters was designed to offer extremely fast publication times and is currently one of the fastest double peer-reviewed publication media in solid state and materials physics. Average times are 11 days from submission to first editorial decision, and 12 days from acceptance to online publication. It communicates important findings with a high degree of novelty and need for express publication, as well as other results of immediate interest to the solid-state physics and materials science community. Published Letters require approval by at least two independent reviewers. The journal covers topics such as preparation, structure and simulation of advanced materials, theoretical and experimental investigations of the atomistic and electronic structure, optical, magnetic, superconducting, ferroelectric and other properties of solids, nanostructures and low-dimensional systems as well as device applications. Rapid Research Letters particularly invites papers from interdisciplinary and emerging new areas of research.