Journal of Physics D: Applied Physics最新文献_第5页

Design Optimization of Wide-Gate Swing E-Mode GaN HEMTs with Junction Barrier Schottky Gate 采用结界势垒肖特基栅极的宽栅摆幅 E-Mode GaN HEMT 的设计优化

Journal of Physics D: Applied Physics Pub Date : 2024-07-12 DOI: 10.1088/1361-6463/ad6275

Kuiyuan Tian, Yapeng Zhao, Jiangfeng Du, Q Yu

{"title":"Design Optimization of Wide-Gate Swing E-Mode GaN HEMTs with Junction Barrier Schottky Gate","authors":"Kuiyuan Tian, Yapeng Zhao, Jiangfeng Du, Q Yu","doi":"10.1088/1361-6463/ad6275","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6275","url":null,"abstract":"\u0000 To increase the gate swing, a GaN-based high-electron-mobility transistor with a junction barrier Schottky gate (JBS-HEMT) was proposed. Compared to conventional p-GaN Schottky gate HEMTs (Conv-HEMT), the high electric field at the surface is transferred to the pn junction inside the body, and the extended depletion region of the pn junction shields the surface Schottky contact interface for the JBS-HEMT. After fitting the model to the reported device, the proposed JBS-HEMT was simulated and optimized using the Sentaurus TCAD tool. The simulation results of the optimized JBS-HEMT demonstrate a high gate breakdown voltage (17.6V), which is 158.5% higher than the gate breakdown voltage of the Conv-HEMT (11.1V) and a lower gate leakage current of six orders of magnitude than the Conv-HEMT at the gate-to-source voltage of 10V. The proposed JBS-HEMT exhibits a positive threshold voltage (1.68V) and excellent threshold voltage stability, and the maximum threshold voltage drift of the JBS-HEMT (+0.237V) is smaller than that of the Conv-HEMT (-0.714V) under gate stress conditions. The peak transconductance of the JBS-HEMT (186mS/mm) at athe drain-to-source voltage of 10V showed almost no reduction compared to the Conv-HEMT (189mS/mm), which solves the problem of decreased transconductance capability of the reported GaN HEMT with a p-n junction gate (PNJ-HEMT). It was confirmed that the JBS-HEMT has excellent gate stability and potential for power electronics applications.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141654297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reprogrammable metasurface design for NIR beam steering and active filtering 用于近红外光束转向和主动滤波的可重新编程元表面设计

Journal of Physics D: Applied Physics Pub Date : 2024-07-12 DOI: 10.1088/1361-6463/ad626c

H. Hajian, Matthieu Proffit, Ekmel Özbay, Pascal Landais, A. L. Bradley

{"title":"Reprogrammable metasurface design for NIR beam steering and active filtering","authors":"H. Hajian, Matthieu Proffit, Ekmel Özbay, Pascal Landais, A. L. Bradley","doi":"10.1088/1361-6463/ad626c","DOIUrl":"https://doi.org/10.1088/1361-6463/ad626c","url":null,"abstract":"\u0000 Reprogrammable metasurfaces enable active modulation of light at subwavelength scales. Operating in the microwave, terahertz, and mid-infrared ranges, these metasurfaces find applications in communications, sensing, and imaging. Electrically tunable metasurfaces operating in the near-infrared (NIR) range are crucial for LiDAR applications. Achieving a NIR reprogrammable metasurface requires individual gating of nano-antennas, emphasizing effective heat management to preserve device performance. To this end, here we propose an electrically tunable Au-vanadium dioxide (VO2) metasurface design on top of a one-dimensional Si-Al2O3 photonic crystal (PC), positioned on a SiC substrate. Each individual Au-VO2 nano-antenna is switched from an Off to ON state via Joule heating, enabling the programming of the metasurface using 1-bit (binary) control. While operating as a nearly perfect reflector at λ_0=1.55 μm, the materials, thickness, and number of the layers in the PC are carefully chosen to ensure it acts as a thermal metamaterial. Moreover, with high optical efficiency (R~40% at λ_0), appropriate thermal performance, and feasibility, the metasurface also enables broadband programmable beam steering in the 1.4 μm-1.7 μm range for a wide steering angle range. This metasurface design also offers active control over NIR light transmittance, reflectance and absorptance in the wavelength range of 0.75 μm-3 μm. These characteristics render the device practical for LiDAR and active filtering.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141654402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A perspective on manganese-based flow batteries 透视锰基液流电池

Journal of Physics D: Applied Physics Pub Date : 2024-07-12 DOI: 10.1088/1361-6463/ad626b

Xinan Wang, Mei Ding, C. Jia

引用次数: 0

Hybrid simulation of a capacitive Ar/SiH4 discharge driven by electrically asymmetric voltage waveforms 电子不对称电压波形驱动的电容性 Ar/SiH4 放电的混合模拟

Journal of Physics D: Applied Physics Pub Date : 2024-07-12 DOI: 10.1088/1361-6463/ad6276

Yifan Zhang, Wan Dong, Wen-Zhu Jia, Yuan-Hong Song

{"title":"Hybrid simulation of a capacitive Ar/SiH4 discharge driven by electrically asymmetric voltage waveforms","authors":"Yifan Zhang, Wan Dong, Wen-Zhu Jia, Yuan-Hong Song","doi":"10.1088/1361-6463/ad6276","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6276","url":null,"abstract":"\u0000 Voltage waveforms associated with the electrical asymmetry effect (EAE) have the potential to be used in the deposition of the silicon-based film, since they are expected to decouple ion energy and flux at the wafer surface, and further facilitate control of the process. In this study, a one-dimensional fluid/electron Monte Carlo hybrid model is employed to examine the EAE in a capacitively coupled argon- silane discharge, encompassing both amplitude asymmetry effect (AAE) and slope asymmetry effect (SAE). In the case of AAE, with the increasing pressure, the discharge electronegativity gradually intensifies, in conjunction with a transition of the electron heating mode from α to drift-ambipolar (DA), a reduction of the absolute value of the DC self-bias voltage, and a decrease in Ar+ content, with an increase in SiH3+ content. For SAE, the trend in the discharge characteristics with the increasing pressure is similar to that for AAE, but the details are different. In SAE, the electronegativity and bulk electric field are much enhanced, resulting in higher content of high-energy electrons and Ar+ in the bulk. In addition, the absolute value of the self-bias is lower, but shows a fewer decline with the increasing pressure. The deposition rate is lower in SAE, due to the lower electron heating efficiency. However, larger voltage drop difference between two sheaths leads to a wider range of ion energy modulation at higher pressures. This study systematically investigates and compares Ar/SiH4 discharges driven by two electrically asymmetric voltage waveforms across various parameters including electron dynamics, ion and neutral transport properties, and deposition rates, with the aim of providing valuable insights and a reference for industrial applications.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141654718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetic interaction in Sr0.7La0.3Fe11.75Co0.25O19 - CoFe2O4 composite system: Observation, evidence, and influence Sr0.7La0.3Fe11.75Co0.25O19 - CoFe2O4 复合体系中的磁相互作用：观察、证据和影响

Journal of Physics D: Applied Physics Pub Date : 2024-07-12 DOI: 10.1088/1361-6463/ad626f

S. Rout, Tupan Das, Anant Shukla, Manoranjan Kar

{"title":"Magnetic interaction in Sr0.7La0.3Fe11.75Co0.25O19 - CoFe2O4 composite system: Observation, evidence, and influence","authors":"S. Rout, Tupan Das, Anant Shukla, Manoranjan Kar","doi":"10.1088/1361-6463/ad626f","DOIUrl":"https://doi.org/10.1088/1361-6463/ad626f","url":null,"abstract":"\u0000 (100-x) Sr0.7La0.3Fe11.75Co0.25O19-(x) CoFe2O4 composites were synthesized by the one pot sol-gel auto-combustion method. The individual phase purity, morphology, and magnetic hysteresis loop of the composite magnet were analyzed by X-ray powder diffraction, field emission scanning electron microscopy, and vibrating sample magnetometer, respectively. The apparent observation of room temperature hysteresis loop indicates the existence of interfacial exchange interaction. Nevertheless, saturation magnetization (Ms) follows the trend of Vegard’s law. The nature of magnetic interaction and its dependency on the amount of each phase were analyzed by employing the Thamm-Hesse plot. The critical size of the soft phase particle did not corroborate with the results of ∆M vs H plot. However, this synthesis method is found to be successful in obtaining single-step magnetization reversal in hard-soft composite magnets. The deviation from ideal non-interacting Stoner-Wohlfarth particles puts the single hard phase into the limelight. The (BH)max in the range of 1.07-0.98 MGOe has been obtained for the synthesized composite magnet.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141654511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spin-momentum properties of the spin-orbit interactions of light at optical interfaces 光学界面上光的自旋轨道相互作用的自旋动量特性

Journal of Physics D: Applied Physics Pub Date : 2024-07-12 DOI: 10.1088/1361-6463/ad6273

Jie Chen, Yawei Tan, Rong Wang, Qiang Zhou, yong cao, Xiaohui Ling

{"title":"Spin-momentum properties of the spin-orbit interactions of light at optical interfaces","authors":"Jie Chen, Yawei Tan, Rong Wang, Qiang Zhou, yong cao, Xiaohui Ling","doi":"10.1088/1361-6463/ad6273","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6273","url":null,"abstract":"\u0000 The spin-orbit interaction (SOI) of light manifests as the generation of spin-dependent vortex beams when a spin-polarized beam strikes an optical interface normally. However, the spin-momentum nature of this SOI process remains elusive, which impedes further manipulation. Here, we systematically investigate the spin-momentum properties of the transmitted beam in this SOI process using a full-wave theory. The transmitted beam has three components, a spin-maintained normal mode, a spin-reversed abnormal mode, and a longitudinal component. By decomposing the total spin angular momentum (SAM) into the transverse SAM (T-SAM) and the helicity dependent longitudinal SAM (L-SAM), we demonstrate that the L-SAM dominates the total SAM of the normal mode, while the T-SAM dictates that of the abnormal mode. The underlying physics is that the normal mode exhibits a much larger weight than the longitudinal field, while the abnormal mode has a weight comparable to the longitudinal field. This study enriches the understanding of the spin-momentum nature of light's SOI and offers new opportunities for manipulating light's angular momentum.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141655078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of monolayer ratio on single-shot all-optical switching in Gd/Fe multilayers 单层比对钆/铁多层膜中单次全光开关的影响

Journal of Physics D: Applied Physics Pub Date : 2024-07-12 DOI: 10.1088/1361-6463/ad6272

Caijiang Jiang, Donglin Liu, Xinyu Song, Suiyan Tan, Chudong Xu

引用次数: 0

Highly sensitive terahertz polarization biosensor utilizing chiral metasurface 利用手性元表面的高灵敏度太赫兹偏振生物传感器

Journal of Physics D: Applied Physics Pub Date : 2024-07-11 DOI: 10.1088/1361-6463/ad61fa

Jiu-sheng Li, Yao-Yao Xue, Feng-lei Guo

{"title":"Highly sensitive terahertz polarization biosensor utilizing chiral metasurface","authors":"Jiu-sheng Li, Yao-Yao Xue, Feng-lei Guo","doi":"10.1088/1361-6463/ad61fa","DOIUrl":"https://doi.org/10.1088/1361-6463/ad61fa","url":null,"abstract":"\u0000 In order to achieve a highly sensitive biosensor with a simple structure, we propose a chiral metasurface polarization sensor. Using immunological surface plasmon resonance (SPR) detection, the antigen or antibody is fixed as a probe on the SPR metasurface to detect the corresponding antibody or antigen. Through the change of the refractive index of the analyte on the surface facial mask, the terahertz signal changes, and finally the sensing detection of avian influenza virus can be achieved. The designed metasurface adopts a hollow split sector chiral structure to generate chiral surface current, which can convert linearly polarized incident waves as elliptical polarized waves. The structure achieves the high sensitivity of 401 deg/RIU at frequency of 0.8THz, and the avian influenza virus (H1N1, H5N2 and H9N2) with the same real part of the refractive index can also be distinguished. Influenza viruses belong to the family Orthomyxoviridae of RNA viruses, divided into three types: A, B, and C. In this article, avian influenza viruses belong to type A influenza viruses. It can clearly identify different Avian Influenza Viruses by the two polarization characteristic parameters of the reflection spectrum PEA (Polarization Ellipse Angle) and PRA (Polarization Rotation Angle). This method has a significant application prospect in the fields of biomedicine and food industries.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141655478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Breakdown voltage enhancement and specific on-resistance reduction in depletion-mode GaN HEMTs by co-modulating electric field 通过共调制电场增强耗尽型 GaN HEMT 的击穿电压并降低其比导通电阻

Journal of Physics D: Applied Physics Pub Date : 2024-07-11 DOI: 10.1088/1361-6463/ad61f6

Ling Luo, Nengtao Wu, Zhiheng Xing, Shanjie Li, Fanyin Zeng, Ben Cao, Changtong Wu, Guoqiang Li

引用次数: 0

First-principles Study on the Electronic Structure and Photocatalytic Properties of Novel Two-dimensional JanusCrXCN4(X = Si, Ge) 新型二维 JanusCrXCN4（X = Si，Ge）电子结构和光催化特性的第一性原理研究

Journal of Physics D: Applied Physics Pub Date : 2024-07-11 DOI: 10.1088/1361-6463/ad61f8

Mengya Huang, Qi-Zhi Lang, Wang Yi, Xiang Guo, Zhao Ding, Jiang Yan, Xuefei Liu

{"title":"First-principles Study on the Electronic Structure and Photocatalytic Properties of Novel Two-dimensional JanusCrXCN4(X = Si, Ge)","authors":"Mengya Huang, Qi-Zhi Lang, Wang Yi, Xiang Guo, Zhao Ding, Jiang Yan, Xuefei Liu","doi":"10.1088/1361-6463/ad61f8","DOIUrl":"https://doi.org/10.1088/1361-6463/ad61f8","url":null,"abstract":"\u0000 Abundant studies demonstrate the significant role of Janus-structured two dimensional semiconductors as photocatalytic materials, highlighting their substantial advantages and importance in photocatalysis. In this work, CrXCN4(X = Si, Ge) Janus monolayers were constructed based on CrC2N4, and the thermal stability, thermodynamic stability, mechanical stability, electronic properties, and optical properties of the monolayers were systematically investigated. Furthermore, an investigation was conducted to examine the impact of biaxial strain on their electrical and light absorption properties. The findings reveal that both monolayers exhibit direct band gap characteristics, with high absorption coefficients for visible light owing to their appropriate band gaps (1.44 eV for CrSiCN4 and 1.15 eV for CrGeCN4, respectively). At compressive strains exceeding 3%, the CrSiCN4monolayer demonstrates an optimal band edge position, suggesting its potential as a photocatalyst for overall water splitting. Furthermore, as the compressive strain increases, the absorption spectra have blue-shifted and the absorption coefficient becomes higher, exceeding 2×105/cm under a -3% compressive strain. Our study highlights the potential applications of CrXCN4monolayers in the field of optoelectronic device, particularly emphasizing the promising candidacy of CrSiCN4 as an efficient photocatalyst.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141656752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0