Journal of Physics D: Applied Physics最新文献_第4页

Frequency reconfigurable slot antenna utilizing solid-state plasma S-PIN diodes: simulation and experimental analysis 利用固态等离子 S-PIN 二极管的频率可重构槽形天线：仿真与实验分析

Journal of Physics D: Applied Physics Pub Date : 2024-07-15 DOI: 10.1088/1361-6463/ad6330

Xiangyu Jin, Yonggang Zhou, Jian Lou, Si-yuan Liu, Shaobin Liu

引用次数: 0

Field Management in NiOx/β-Ga2O3 Merged-PIN Schottky Diodes: Simulation Studies and Experimental Validation NiOx/β-Ga2O3 合并引脚肖特基二极管中的场管理：仿真研究与实验验证

Journal of Physics D: Applied Physics Pub Date : 2024-07-15 DOI: 10.1088/1361-6463/ad632c

Jose Manuel Taboada Vasquez, Ankita Mukherjee, Smriti Singh, Vishal Khandelwal, S. Yuvaraja, Glen Isaac Maciel García, M. Rajbhar, Xiaohang Li, B. Sarkar

{"title":"Field Management in NiOx/β-Ga2O3 Merged-PIN Schottky Diodes: Simulation Studies and Experimental Validation","authors":"Jose Manuel Taboada Vasquez, Ankita Mukherjee, Smriti Singh, Vishal Khandelwal, S. Yuvaraja, Glen Isaac Maciel García, M. Rajbhar, Xiaohang Li, B. Sarkar","doi":"10.1088/1361-6463/ad632c","DOIUrl":"https://doi.org/10.1088/1361-6463/ad632c","url":null,"abstract":"\u0000 In recent years, p-type NiOx has emerged as a promising alternative to realize kilovolt-class β-Ga2O3 based PN junction diodes. However, only a handful number of studies have been performed to realize β-Ga2O3-based unipolar diodes using NiOx as guard-ring or floating rings. In this work, we investigated the device-design of NiOx/β-Ga2O3 unipolar diodes using Technology Computer Aided Design (TCAD) simulations and experimental validations. We show that a systematic electric field management approach can potentially lead to NiOx/β-Ga2O3 heterojunction unipolar diode offering improved breakdown characteristics without a serious compromise in ON-state resistance. Accordingly, NiOx/β-Ga2O3 heterojunction diode in merged-PIN Schottky configuration is shown to outperform the regular Schottky diode or junction barrier Schottky diode counterpart. The analysis performed in this work is thought to be valuable in device-design of β-Ga2O3-based unipolar diodes that use a different p-type semiconductor candidate as guard ring and floating rings.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141645193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The time evolution of electrical and thermodynamic characteristics of surface dielectric barrier discharge caused by dielectric degradation 介质降解引起的表面介质阻挡层放电的电学和热力学特性的时间演化

Journal of Physics D: Applied Physics Pub Date : 2024-07-15 DOI: 10.1088/1361-6463/ad632e

an wang, Zunyi Tian, Yang Peng, Haitao Wang, Mengmeng Zhang, Shuobei Sun, Z. Hou

{"title":"The time evolution of electrical and thermodynamic characteristics of surface dielectric barrier discharge caused by dielectric degradation","authors":"an wang, Zunyi Tian, Yang Peng, Haitao Wang, Mengmeng Zhang, Shuobei Sun, Z. Hou","doi":"10.1088/1361-6463/ad632e","DOIUrl":"https://doi.org/10.1088/1361-6463/ad632e","url":null,"abstract":"\u0000 The degradation of the dielectric layer is a common issue in dielectric barrier discharge (DBD). The performance of DBD devices may suffer from instability due to potential corrosion of the dielectric layer caused by discharge, which could even result in structural failure. To gain a comprehensive understanding of the degradation of DBD devices during discharge, the evolution of the performance of DBD devices with various dielectric materials over time is studied. Periodic patterns are found to form on the dielectric surface along the edge of the high-voltage electrode. The electrical data, emission spectra, and surface morphologies of DBD devices with three different dielectric materials, namely ceramics, glass, and PCB, are obtained during an eight-hour discharge. The electrical and thermodynamic characteristics of DBD devices with the three dielectric materials are found to initially decrease by about 20~40%. Subsequently, they remain stable in devices with ceramics and PCB dielectric layers but increase in devices with glass dielectric layers until the end. Surface morphologies reveal that periodic patterns consisting of metal accumulations, etching pits, and metal depositions form on the surfaces of ceramics, glass, and PCBs, respectively. Some organic compounds vaporize from the surface of PCBs. The deposition, etching, and vaporization could be reasons for changes in the electrical and thermodynamic characteristics. It shows that degradation occurs not only in organic dielectrics like polymers but also in inorganic dielectrics such as ceramics and glass. To enhance stability and prevent potential failures and overestimations, electrical and optical measurements could be utilized as diagnostic methods in applications involving DBD devices.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141644968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-throughput phase field simulation and machine learning for predicting the breakdown performance of all-organic composites 利用高通量相场模拟和机器学习预测全有机复合材料的击穿性能

Journal of Physics D: Applied Physics Pub Date : 2024-07-12 DOI: 10.1088/1361-6463/ad626e

Dong-Duan Liu, Qiao Li, Yujie Zhu, Bingxu Jiang, Tan Zeng, Hongxiao Yang, Jinliang He, Qi Li, Chao Yuan

{"title":"High-throughput phase field simulation and machine learning for predicting the breakdown performance of all-organic composites","authors":"Dong-Duan Liu, Qiao Li, Yujie Zhu, Bingxu Jiang, Tan Zeng, Hongxiao Yang, Jinliang He, Qi Li, Chao Yuan","doi":"10.1088/1361-6463/ad626e","DOIUrl":"https://doi.org/10.1088/1361-6463/ad626e","url":null,"abstract":"\u0000 All-organic dielectric polymers are materials of choice for modern power electronics and high-density energy storage, and their performance can be significantly improved by doping trace amounts of organic molecular semiconductors with strong electron-affinity energy to suppress charge conduction losses. Insight into the breakdown mechanism of polymers/organic molecular semiconductor composites is essential for the design of high-performance dielectric polymers. This study investigates the impact of the doping concentration of organic molecular semiconductors, dielectric constants, and trap depths on the breakdown performance of dielectric polymers under high temperature and electric fields. A modified phase-field model, incorporating deep traps and carriers’ coulomb capture radius, has been developed to facilitate high-throughput simulations of electrical breakdown in polymer/organic molecular semiconductor composites. This work accurately predicted the breakdown strength of all-organic composites using high-throughput phase-field simulation data as input for machine learning, which provides crucial theoretical support for designing all-organic composite dielectric polymers for energy storage capacitors under extreme conditions.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141654533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Evaluation of cartilage properties from NIR diffuse reflectance spectra: numerical simulation 从近红外漫反射光谱评估软骨特性：数值模拟

Journal of Physics D: Applied Physics Pub Date : 2024-07-12 DOI: 10.1088/1361-6463/ad6270

Nataliya Rovnyagina, Denis Davydov, Vladimir Lazarev, Alexey V. Lychagin, Peter Timashev, Gleb Budylin, Evgeny Shirshin

{"title":"Evaluation of cartilage properties from NIR diffuse reflectance spectra: numerical simulation","authors":"Nataliya Rovnyagina, Denis Davydov, Vladimir Lazarev, Alexey V. Lychagin, Peter Timashev, Gleb Budylin, Evgeny Shirshin","doi":"10.1088/1361-6463/ad6270","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6270","url":null,"abstract":"\u0000 Diseased conditions of articular cartilage such as osteoarthritis (OA) are accompanied by a change in the water concentration, together with a decrease in cartilage thickness. These parameters are important indicators of the normal joint functioning. Light scattering in a heterogeneous joint tissue is a complex process and it is important to supplement its study with understanding gained from modelling. In this work we employed Monte Carlo (MC) for analysis of the relationship between changes in cartilage parameters and calculated diffuse reflection spectra (DRS). It has been shown that water absorption peak at 980 nm is determined by both water content and cartilage thickness, while changes in DRS spectra at 1450 nm are mostly driven only by water content. Since independent assessment of these parameters is clinically relevant, several approaches for their determination were developed. A heuristic algorithm for cartilage thickness determination and its quality metrics (R2= 0.96) were obtained. Several regression models using the features of DRS signal formation at different wavelengths were developed and it was shown that the use of a wide range of wavelengths (850 – 1700 nm) allows to determine the cartilage water concentration and its thickness with the accuracy R2 0.96 and 0.99 while measuring at different probe-detector distances.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141652326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Cylindrical Kadomtsev Petviashvili equation for ion acoustic waves with double spectral indices distributed electrons 具有双光谱指数分布电子的离子声波的圆柱卡多姆采夫-彼得维亚什维利方程

Journal of Physics D: Applied Physics Pub Date : 2024-07-12 DOI: 10.1088/1361-6463/ad6268

Nimra Tufail, Gul washa, Shakir Ullah, Abdul Wahab Muhammad Ali, Hira Affan, N. Rekik, Umer Farooq

引用次数: 0

Importance of growth method and substrate-induced crystalline quality in Al/Gd0.2Ca0.8MnO3/Au memristor devices Al/Gd0.2Ca0.8MnO3/Au 晶硅器件中生长方法和基底诱导晶体质量的重要性

Journal of Physics D: Applied Physics Pub Date : 2024-07-12 DOI: 10.1088/1361-6463/ad6271

I. Angervo, A. Antola, Tuomas Vaimala, Anu Malmi, A. Schulman, H. Huhtinen, P. Paturi

{"title":"Importance of growth method and substrate-induced crystalline quality in Al/Gd0.2Ca0.8MnO3/Au memristor devices","authors":"I. Angervo, A. Antola, Tuomas Vaimala, Anu Malmi, A. Schulman, H. Huhtinen, P. Paturi","doi":"10.1088/1361-6463/ad6271","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6271","url":null,"abstract":"\u0000 We report on the impact of the growth method and substrate-induced crystalline quality on the performance of planar Al/Gd0.2Ca0.8MnO3/Au memristor devices. Structural, magnetic, and resistive properties were thoroughly examined for fundamental characterizations, with a particular emphasis on their correlation with the memristive properties of fabricated devices. Our findings suggest that memristor structures grown on single crystal SrTiO3 substrates using pulsed laser deposition consistently exhibit superior crystalline quality compared to those fabricated using chemical solution deposition and on silicon-based substrates. Despite variations in growth method and substrate, all memristor structures display typical resistive switching behaviour, distinguishing between high-resistance and low-resistance states. However, endurance and retention measurements demonstrate that memristor structures produced via pulsed laser deposition on single crystalline SrTiO3 demonstrate the most favourable resistive switching properties. To elucidate the mechanisms underlying the differences in resistive switching behavior across substrates and deposition methods, we extensively discuss these issues in the context of structural distortion and conduction mechanisms.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141652942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dynamics of the material ejection in a dipolar arc in continuous regime 连续状态下双极电弧中的材料喷射动力学

Journal of Physics D: Applied Physics Pub Date : 2024-07-12 DOI: 10.1088/1361-6463/ad6274

Arthur Hellé, R. Hugon, F. Brochard, Sarah Chouchene, G. Marcos, Jérôme Moritz, Patrick Schweitzer

引用次数: 0

Enhanced Electrical Insulation Properties of 2-isopropenyl-2-oxazoline Grafted Polypropylene for High Voltage Direct Current Power Cables 用于高压直流电力电缆的 2-isopropenyl-2-oxazoline 接枝聚丙烯的增强电绝缘性能

Journal of Physics D: Applied Physics Pub Date : 2024-07-12 DOI: 10.1088/1361-6463/ad626a

Chao Yuan, Bingxu Jiang, Yujie Zhu, Tan Zeng, Dong-Duan Liu, Chengxu Tang, Qiao Li, Qi Li, Jinliang He

{"title":"Enhanced Electrical Insulation Properties of 2-isopropenyl-2-oxazoline Grafted Polypropylene for High Voltage Direct Current Power Cables","authors":"Chao Yuan, Bingxu Jiang, Yujie Zhu, Tan Zeng, Dong-Duan Liu, Chengxu Tang, Qiao Li, Qi Li, Jinliang He","doi":"10.1088/1361-6463/ad626a","DOIUrl":"https://doi.org/10.1088/1361-6463/ad626a","url":null,"abstract":"\u0000 Polymers have been extensively used for high voltage direct current transmission systems as insulation power cables. Space charge accumulation consistently remains the primary factor contributing to the degradation of the electrical insulation properties of polymers. Grafting modification is a valid approach for suppressing the injection of space charges and free electrons by inducing deep traps. In this paper, the modified polypropylene grafted the group with low ionization energy is reported. The deep traps are revealed by the thermally stimulated depolarization current experiment and the band structure as well as the electrostatic potential by density functional theory simulation. The method with the innovative hybrid functional and basis set is adopted to establish the average local ionization distribution of the grafting group, thus confirming its strong electrophilicity. Furthermore, the modified polypropylene has been proved to obtain higher breakdown strength and operational stability by experiments. This work can provide insights for the design and selection of power cables with excellent electrical insulation properties.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141655235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Vertically stacked van der Waals heterostructures for three-dimensional circuitry elements 用于三维电路元件的垂直堆叠范德华异质结构

Journal of Physics D: Applied Physics Pub Date : 2024-07-12 DOI: 10.1088/1361-6463/ad626d

Jinshui Miao, Yueyue Fang, Yu Jiang, Siyu Long, Yi Dong, Mengyang Kang, Tangxin Li, Jinjin Wang, Xiao Fu, Hui Sun, Hailu Wang

{"title":"Vertically stacked van der Waals heterostructures for three-dimensional circuitry elements","authors":"Jinshui Miao, Yueyue Fang, Yu Jiang, Siyu Long, Yi Dong, Mengyang Kang, Tangxin Li, Jinjin Wang, Xiao Fu, Hui Sun, Hailu Wang","doi":"10.1088/1361-6463/ad626d","DOIUrl":"https://doi.org/10.1088/1361-6463/ad626d","url":null,"abstract":"\u0000 Two-dimensional (2D) layered materials have been actively explored for electronic device applications because of their ability to form van der Waals heterostructures with unique electronic properties. Vertical integration of atomically thin 2D materials can enable the design of a three-dimensional (3D) circuit which is a promising pathway to continuously increase device density. In this study, we vertically stack 2D materials, such as graphene（Gr）, MoS2, and black phosphorus (BP) to build transistors, heterostructure p-n diodes, and 3D logic circuits. The vertical transistors built from MoS2 or BP semiconductor exhibit a good on-off ratio of up to 103 and a high current density of ~200 Acm-2 at a very small VDS of 50 mV. The Gr/BP/MoS2 vertical heterostructure p-n diodes show a high gate-tunable rectification ratio of 102. Finally, we have demonstrated a 3D CMOS inverter by vertical integration of Gr, BP (p-channel), Gr, MoS2 (n-channel), and a 50-nm-thick gold film in sequence. The ability to vertically stack 2D layered materials by van der Waals interactions offers an alternative way to design future 3D integrated circuits.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141653781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0