Jose Manuel Taboada Vasquez, Ankita Mukherjee, Smriti Singh, Vishal Khandelwal, S. Yuvaraja, Glen Isaac Maciel García, M. Rajbhar, Xiaohang Li, B. Sarkar
{"title":"Field Management in NiOx/β-Ga2O3 Merged-PIN Schottky Diodes: Simulation Studies and Experimental Validation","authors":"Jose Manuel Taboada Vasquez, Ankita Mukherjee, Smriti Singh, Vishal Khandelwal, S. Yuvaraja, Glen Isaac Maciel García, M. Rajbhar, Xiaohang Li, B. Sarkar","doi":"10.1088/1361-6463/ad632c","DOIUrl":null,"url":null,"abstract":"\n In recent years, p-type NiOx has emerged as a promising alternative to realize kilovolt-class β-Ga2O3 based PN junction diodes. However, only a handful number of studies have been performed to realize β-Ga2O3-based unipolar diodes using NiOx as guard-ring or floating rings. In this work, we investigated the device-design of NiOx/β-Ga2O3 unipolar diodes using Technology Computer Aided Design (TCAD) simulations and experimental validations. We show that a systematic electric field management approach can potentially lead to NiOx/β-Ga2O3 heterojunction unipolar diode offering improved breakdown characteristics without a serious compromise in ON-state resistance. Accordingly, NiOx/β-Ga2O3 heterojunction diode in merged-PIN Schottky configuration is shown to outperform the regular Schottky diode or junction barrier Schottky diode counterpart. The analysis performed in this work is thought to be valuable in device-design of β-Ga2O3-based unipolar diodes that use a different p-type semiconductor candidate as guard ring and floating rings.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physics D: Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1361-6463/ad632c","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In recent years, p-type NiOx has emerged as a promising alternative to realize kilovolt-class β-Ga2O3 based PN junction diodes. However, only a handful number of studies have been performed to realize β-Ga2O3-based unipolar diodes using NiOx as guard-ring or floating rings. In this work, we investigated the device-design of NiOx/β-Ga2O3 unipolar diodes using Technology Computer Aided Design (TCAD) simulations and experimental validations. We show that a systematic electric field management approach can potentially lead to NiOx/β-Ga2O3 heterojunction unipolar diode offering improved breakdown characteristics without a serious compromise in ON-state resistance. Accordingly, NiOx/β-Ga2O3 heterojunction diode in merged-PIN Schottky configuration is shown to outperform the regular Schottky diode or junction barrier Schottky diode counterpart. The analysis performed in this work is thought to be valuable in device-design of β-Ga2O3-based unipolar diodes that use a different p-type semiconductor candidate as guard ring and floating rings.