Journal of Physics D: Applied Physics最新文献_第3页

Cylindrical Kadomtsev Petviashvili equation for ion acoustic waves with double spectral indices distributed electrons 具有双光谱指数分布电子的离子声波的圆柱卡多姆采夫-彼得维亚什维利方程

Journal of Physics D: Applied Physics Pub Date : 2024-07-12 DOI: 10.1088/1361-6463/ad6268

Nimra Tufail, Gul washa, Shakir Ullah, Abdul Wahab Muhammad Ali, Hira Affan, N. Rekik, Umer Farooq

引用次数: 0

Importance of growth method and substrate-induced crystalline quality in Al/Gd0.2Ca0.8MnO3/Au memristor devices Al/Gd0.2Ca0.8MnO3/Au 晶硅器件中生长方法和基底诱导晶体质量的重要性

Journal of Physics D: Applied Physics Pub Date : 2024-07-12 DOI: 10.1088/1361-6463/ad6271

I. Angervo, A. Antola, Tuomas Vaimala, Anu Malmi, A. Schulman, H. Huhtinen, P. Paturi

{"title":"Importance of growth method and substrate-induced crystalline quality in Al/Gd0.2Ca0.8MnO3/Au memristor devices","authors":"I. Angervo, A. Antola, Tuomas Vaimala, Anu Malmi, A. Schulman, H. Huhtinen, P. Paturi","doi":"10.1088/1361-6463/ad6271","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6271","url":null,"abstract":"\u0000 We report on the impact of the growth method and substrate-induced crystalline quality on the performance of planar Al/Gd0.2Ca0.8MnO3/Au memristor devices. Structural, magnetic, and resistive properties were thoroughly examined for fundamental characterizations, with a particular emphasis on their correlation with the memristive properties of fabricated devices. Our findings suggest that memristor structures grown on single crystal SrTiO3 substrates using pulsed laser deposition consistently exhibit superior crystalline quality compared to those fabricated using chemical solution deposition and on silicon-based substrates. Despite variations in growth method and substrate, all memristor structures display typical resistive switching behaviour, distinguishing between high-resistance and low-resistance states. However, endurance and retention measurements demonstrate that memristor structures produced via pulsed laser deposition on single crystalline SrTiO3 demonstrate the most favourable resistive switching properties. To elucidate the mechanisms underlying the differences in resistive switching behavior across substrates and deposition methods, we extensively discuss these issues in the context of structural distortion and conduction mechanisms.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"38 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141652942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dynamics of the material ejection in a dipolar arc in continuous regime 连续状态下双极电弧中的材料喷射动力学

Journal of Physics D: Applied Physics Pub Date : 2024-07-12 DOI: 10.1088/1361-6463/ad6274

Arthur Hellé, R. Hugon, F. Brochard, Sarah Chouchene, G. Marcos, Jérôme Moritz, Patrick Schweitzer

引用次数: 0

Vertically stacked van der Waals heterostructures for three-dimensional circuitry elements 用于三维电路元件的垂直堆叠范德华异质结构

Journal of Physics D: Applied Physics Pub Date : 2024-07-12 DOI: 10.1088/1361-6463/ad626d

Jinshui Miao, Yueyue Fang, Yu Jiang, Siyu Long, Yi Dong, Mengyang Kang, Tangxin Li, Jinjin Wang, Xiao Fu, Hui Sun, Hailu Wang

{"title":"Vertically stacked van der Waals heterostructures for three-dimensional circuitry elements","authors":"Jinshui Miao, Yueyue Fang, Yu Jiang, Siyu Long, Yi Dong, Mengyang Kang, Tangxin Li, Jinjin Wang, Xiao Fu, Hui Sun, Hailu Wang","doi":"10.1088/1361-6463/ad626d","DOIUrl":"https://doi.org/10.1088/1361-6463/ad626d","url":null,"abstract":"\u0000 Two-dimensional (2D) layered materials have been actively explored for electronic device applications because of their ability to form van der Waals heterostructures with unique electronic properties. Vertical integration of atomically thin 2D materials can enable the design of a three-dimensional (3D) circuit which is a promising pathway to continuously increase device density. In this study, we vertically stack 2D materials, such as graphene（Gr）, MoS2, and black phosphorus (BP) to build transistors, heterostructure p-n diodes, and 3D logic circuits. The vertical transistors built from MoS2 or BP semiconductor exhibit a good on-off ratio of up to 103 and a high current density of ~200 Acm-2 at a very small VDS of 50 mV. The Gr/BP/MoS2 vertical heterostructure p-n diodes show a high gate-tunable rectification ratio of 102. Finally, we have demonstrated a 3D CMOS inverter by vertical integration of Gr, BP (p-channel), Gr, MoS2 (n-channel), and a 50-nm-thick gold film in sequence. The ability to vertically stack 2D layered materials by van der Waals interactions offers an alternative way to design future 3D integrated circuits.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"60 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141653781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design Optimization of Wide-Gate Swing E-Mode GaN HEMTs with Junction Barrier Schottky Gate 采用结界势垒肖特基栅极的宽栅摆幅 E-Mode GaN HEMT 的设计优化

Journal of Physics D: Applied Physics Pub Date : 2024-07-12 DOI: 10.1088/1361-6463/ad6275

Kuiyuan Tian, Yapeng Zhao, Jiangfeng Du, Q Yu

{"title":"Design Optimization of Wide-Gate Swing E-Mode GaN HEMTs with Junction Barrier Schottky Gate","authors":"Kuiyuan Tian, Yapeng Zhao, Jiangfeng Du, Q Yu","doi":"10.1088/1361-6463/ad6275","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6275","url":null,"abstract":"\u0000 To increase the gate swing, a GaN-based high-electron-mobility transistor with a junction barrier Schottky gate (JBS-HEMT) was proposed. Compared to conventional p-GaN Schottky gate HEMTs (Conv-HEMT), the high electric field at the surface is transferred to the pn junction inside the body, and the extended depletion region of the pn junction shields the surface Schottky contact interface for the JBS-HEMT. After fitting the model to the reported device, the proposed JBS-HEMT was simulated and optimized using the Sentaurus TCAD tool. The simulation results of the optimized JBS-HEMT demonstrate a high gate breakdown voltage (17.6V), which is 158.5% higher than the gate breakdown voltage of the Conv-HEMT (11.1V) and a lower gate leakage current of six orders of magnitude than the Conv-HEMT at the gate-to-source voltage of 10V. The proposed JBS-HEMT exhibits a positive threshold voltage (1.68V) and excellent threshold voltage stability, and the maximum threshold voltage drift of the JBS-HEMT (+0.237V) is smaller than that of the Conv-HEMT (-0.714V) under gate stress conditions. The peak transconductance of the JBS-HEMT (186mS/mm) at athe drain-to-source voltage of 10V showed almost no reduction compared to the Conv-HEMT (189mS/mm), which solves the problem of decreased transconductance capability of the reported GaN HEMT with a p-n junction gate (PNJ-HEMT). It was confirmed that the JBS-HEMT has excellent gate stability and potential for power electronics applications.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"12 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141654297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Reprogrammable metasurface design for NIR beam steering and active filtering 用于近红外光束转向和主动滤波的可重新编程元表面设计

Journal of Physics D: Applied Physics Pub Date : 2024-07-12 DOI: 10.1088/1361-6463/ad626c

H. Hajian, Matthieu Proffit, Ekmel Özbay, Pascal Landais, A. L. Bradley

{"title":"Reprogrammable metasurface design for NIR beam steering and active filtering","authors":"H. Hajian, Matthieu Proffit, Ekmel Özbay, Pascal Landais, A. L. Bradley","doi":"10.1088/1361-6463/ad626c","DOIUrl":"https://doi.org/10.1088/1361-6463/ad626c","url":null,"abstract":"\u0000 Reprogrammable metasurfaces enable active modulation of light at subwavelength scales. Operating in the microwave, terahertz, and mid-infrared ranges, these metasurfaces find applications in communications, sensing, and imaging. Electrically tunable metasurfaces operating in the near-infrared (NIR) range are crucial for LiDAR applications. Achieving a NIR reprogrammable metasurface requires individual gating of nano-antennas, emphasizing effective heat management to preserve device performance. To this end, here we propose an electrically tunable Au-vanadium dioxide (VO2) metasurface design on top of a one-dimensional Si-Al2O3 photonic crystal (PC), positioned on a SiC substrate. Each individual Au-VO2 nano-antenna is switched from an Off to ON state via Joule heating, enabling the programming of the metasurface using 1-bit (binary) control. While operating as a nearly perfect reflector at λ_0=1.55 μm, the materials, thickness, and number of the layers in the PC are carefully chosen to ensure it acts as a thermal metamaterial. Moreover, with high optical efficiency (R~40% at λ_0), appropriate thermal performance, and feasibility, the metasurface also enables broadband programmable beam steering in the 1.4 μm-1.7 μm range for a wide steering angle range. This metasurface design also offers active control over NIR light transmittance, reflectance and absorptance in the wavelength range of 0.75 μm-3 μm. These characteristics render the device practical for LiDAR and active filtering.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"60 17","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141654402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A perspective on manganese-based flow batteries 透视锰基液流电池

Journal of Physics D: Applied Physics Pub Date : 2024-07-12 DOI: 10.1088/1361-6463/ad626b

Xinan Wang, Mei Ding, C. Jia

引用次数: 0

Spin-momentum properties of the spin-orbit interactions of light at optical interfaces 光学界面上光的自旋轨道相互作用的自旋动量特性

Journal of Physics D: Applied Physics Pub Date : 2024-07-12 DOI: 10.1088/1361-6463/ad6273

Jie Chen, Yawei Tan, Rong Wang, Qiang Zhou, yong cao, Xiaohui Ling

{"title":"Spin-momentum properties of the spin-orbit interactions of light at optical interfaces","authors":"Jie Chen, Yawei Tan, Rong Wang, Qiang Zhou, yong cao, Xiaohui Ling","doi":"10.1088/1361-6463/ad6273","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6273","url":null,"abstract":"\u0000 The spin-orbit interaction (SOI) of light manifests as the generation of spin-dependent vortex beams when a spin-polarized beam strikes an optical interface normally. However, the spin-momentum nature of this SOI process remains elusive, which impedes further manipulation. Here, we systematically investigate the spin-momentum properties of the transmitted beam in this SOI process using a full-wave theory. The transmitted beam has three components, a spin-maintained normal mode, a spin-reversed abnormal mode, and a longitudinal component. By decomposing the total spin angular momentum (SAM) into the transverse SAM (T-SAM) and the helicity dependent longitudinal SAM (L-SAM), we demonstrate that the L-SAM dominates the total SAM of the normal mode, while the T-SAM dictates that of the abnormal mode. The underlying physics is that the normal mode exhibits a much larger weight than the longitudinal field, while the abnormal mode has a weight comparable to the longitudinal field. This study enriches the understanding of the spin-momentum nature of light's SOI and offers new opportunities for manipulating light's angular momentum.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"26 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141655078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Magnetic interaction in Sr0.7La0.3Fe11.75Co0.25O19 - CoFe2O4 composite system: Observation, evidence, and influence Sr0.7La0.3Fe11.75Co0.25O19 - CoFe2O4 复合体系中的磁相互作用：观察、证据和影响

Journal of Physics D: Applied Physics Pub Date : 2024-07-12 DOI: 10.1088/1361-6463/ad626f

S. Rout, Tupan Das, Anant Shukla, Manoranjan Kar

{"title":"Magnetic interaction in Sr0.7La0.3Fe11.75Co0.25O19 - CoFe2O4 composite system: Observation, evidence, and influence","authors":"S. Rout, Tupan Das, Anant Shukla, Manoranjan Kar","doi":"10.1088/1361-6463/ad626f","DOIUrl":"https://doi.org/10.1088/1361-6463/ad626f","url":null,"abstract":"\u0000 (100-x) Sr0.7La0.3Fe11.75Co0.25O19-(x) CoFe2O4 composites were synthesized by the one pot sol-gel auto-combustion method. The individual phase purity, morphology, and magnetic hysteresis loop of the composite magnet were analyzed by X-ray powder diffraction, field emission scanning electron microscopy, and vibrating sample magnetometer, respectively. The apparent observation of room temperature hysteresis loop indicates the existence of interfacial exchange interaction. Nevertheless, saturation magnetization (Ms) follows the trend of Vegard’s law. The nature of magnetic interaction and its dependency on the amount of each phase were analyzed by employing the Thamm-Hesse plot. The critical size of the soft phase particle did not corroborate with the results of ∆M vs H plot. However, this synthesis method is found to be successful in obtaining single-step magnetization reversal in hard-soft composite magnets. The deviation from ideal non-interacting Stoner-Wohlfarth particles puts the single hard phase into the limelight. The (BH)max in the range of 1.07-0.98 MGOe has been obtained for the synthesized composite magnet.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"1 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141654511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hybrid simulation of a capacitive Ar/SiH4 discharge driven by electrically asymmetric voltage waveforms 电子不对称电压波形驱动的电容性 Ar/SiH4 放电的混合模拟

Journal of Physics D: Applied Physics Pub Date : 2024-07-12 DOI: 10.1088/1361-6463/ad6276

Yifan Zhang, Wan Dong, Wen-Zhu Jia, Yuan-Hong Song

{"title":"Hybrid simulation of a capacitive Ar/SiH4 discharge driven by electrically asymmetric voltage waveforms","authors":"Yifan Zhang, Wan Dong, Wen-Zhu Jia, Yuan-Hong Song","doi":"10.1088/1361-6463/ad6276","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6276","url":null,"abstract":"\u0000 Voltage waveforms associated with the electrical asymmetry effect (EAE) have the potential to be used in the deposition of the silicon-based film, since they are expected to decouple ion energy and flux at the wafer surface, and further facilitate control of the process. In this study, a one-dimensional fluid/electron Monte Carlo hybrid model is employed to examine the EAE in a capacitively coupled argon- silane discharge, encompassing both amplitude asymmetry effect (AAE) and slope asymmetry effect (SAE). In the case of AAE, with the increasing pressure, the discharge electronegativity gradually intensifies, in conjunction with a transition of the electron heating mode from α to drift-ambipolar (DA), a reduction of the absolute value of the DC self-bias voltage, and a decrease in Ar+ content, with an increase in SiH3+ content. For SAE, the trend in the discharge characteristics with the increasing pressure is similar to that for AAE, but the details are different. In SAE, the electronegativity and bulk electric field are much enhanced, resulting in higher content of high-energy electrons and Ar+ in the bulk. In addition, the absolute value of the self-bias is lower, but shows a fewer decline with the increasing pressure. The deposition rate is lower in SAE, due to the lower electron heating efficiency. However, larger voltage drop difference between two sheaths leads to a wider range of ion energy modulation at higher pressures. This study systematically investigates and compares Ar/SiH4 discharges driven by two electrically asymmetric voltage waveforms across various parameters including electron dynamics, ion and neutral transport properties, and deposition rates, with the aim of providing valuable insights and a reference for industrial applications.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":"58 7","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141654718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0