Ling Luo, Nengtao Wu, Zhiheng Xing, Shanjie Li, Fanyin Zeng, Ben Cao, Changtong Wu, Guoqiang Li
{"title":"Breakdown voltage enhancement and specific on-resistance reduction in depletion-mode GaN HEMTs by co-modulating electric field","authors":"Ling Luo, Nengtao Wu, Zhiheng Xing, Shanjie Li, Fanyin Zeng, Ben Cao, Changtong Wu, Guoqiang Li","doi":"10.1088/1361-6463/ad61f6","DOIUrl":null,"url":null,"abstract":"\n In this letter, a depletion-mode GaN high-electron mobility transistors (GaN HEMTs) with high breakdown voltage and low on-resistance are designed and experimentally demonstrated. It combines the gate field plate and partial u-GaN cap layer (Gate Field Plate and Partial u-GaN Cap HEMTs: GPU-HEMTs) to co-modulate the surface electric field distribution, which results in the electric field peak being far away from the gate edge, thus improving the breakdown voltage and decreasing the on-resistance. The optimized GPU-HEMTs exhibit a larger output current (I\n DS) of 495 mA/mm and a correspondingly smaller specific on-resistance of 4.26 mΩ·cm2. Meanwhile, a high breakdown voltage of 1044 V at I\n DS = 1 mA/mm compared to the conventional GaN HEMTs of 633 V was obtained. This approach is highly effective in simultaneously optimizing the breakdown voltage and the specific on-resistance of GaN HEMTs, while maintaining a large output current.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Physics D: Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1361-6463/ad61f6","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this letter, a depletion-mode GaN high-electron mobility transistors (GaN HEMTs) with high breakdown voltage and low on-resistance are designed and experimentally demonstrated. It combines the gate field plate and partial u-GaN cap layer (Gate Field Plate and Partial u-GaN Cap HEMTs: GPU-HEMTs) to co-modulate the surface electric field distribution, which results in the electric field peak being far away from the gate edge, thus improving the breakdown voltage and decreasing the on-resistance. The optimized GPU-HEMTs exhibit a larger output current (I
DS) of 495 mA/mm and a correspondingly smaller specific on-resistance of 4.26 mΩ·cm2. Meanwhile, a high breakdown voltage of 1044 V at I
DS = 1 mA/mm compared to the conventional GaN HEMTs of 633 V was obtained. This approach is highly effective in simultaneously optimizing the breakdown voltage and the specific on-resistance of GaN HEMTs, while maintaining a large output current.