Journal of Physics D: Applied Physics最新文献_第6页

Stabilization of Sn2+ in FA0.75MA0.25SnI3 perovskite thin films using electron doner polymer PCDTBT and an improvement in charge transport properties for perovskite solar cells 使用电子捐献者聚合物 PCDTBT 稳定 FA0.75MA0.25SnI3 包晶体薄膜中的 Sn2+ 并改善包晶体太阳能电池的电荷传输特性

Journal of Physics D: Applied Physics Pub Date : 2024-07-11 DOI: 10.1088/1361-6463/ad61f5

Ashok Vishwakarma, Pankaj Kumar, Anand Pandey, Lokendra Kumar

{"title":"Stabilization of Sn2+ in FA0.75MA0.25SnI3 perovskite thin films using electron doner polymer PCDTBT and an improvement in charge transport properties for perovskite solar cells","authors":"Ashok Vishwakarma, Pankaj Kumar, Anand Pandey, Lokendra Kumar","doi":"10.1088/1361-6463/ad61f5","DOIUrl":"https://doi.org/10.1088/1361-6463/ad61f5","url":null,"abstract":"\u0000 Lead free tin halide perovskites for the fabrication of perovskite solar cells have been attracted much attention owing to their outstanding optoelectronic and eco-friendly properties. These materials face severe issues like poor environmental stability, low formation energy, and faster oxidation of tin from Sn2+ to Sn4+ state leading to poor film quality and self-doping. In this work, we have fabricated FA0.75MA0.25SnI3 perovskite thin films via solution processing method and studied conjugated polymer Poly[N-9′-hepta-decanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadia-zole)] (PCDTBT) induced effects in perovskite thin films. Micro-strain of PCDTBT doped FA0.75MA0.25SnI3 perovskite reduced without any change in the crystal structure. Reduction in electron trap density have been observed owing to improved film quality and enlarged perovskite grains. We have observed that Sn4+ content in 0.050wt% PCDTBT doped FA0.75MA0.25SnI3 perovskite film get reduced as shown in X-ray Photoelectron Spectroscopy (XPS) results. The reduction in Sn4+ (cause of self-doping) content shows that PCDTBT doping, maintains the stability of Sn2+ in FA0.75MA0.25SnI3 perovskite thin film. A decrement in hole density from 3.2x1018 cm-3 for pristine to 1.3x1017 cm-3 for 0.050wt% PCDTBT doped FA0.75MA0.25SnI3 perovskite has been observed from C-V measurement which is consistent with XPS results. Thus, PCDTBT doping in perovskite films can effectively tackle the severe issues of tin oxidation and defects in lead-free tin halide perovskite photoactive layer for solar cell application.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141656727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Large-Scale Synthesis of Defect-Free Phosphorene on Nickel Substrates: Enabling Atomistic Thickness Devices. 在镍基底上大规模合成无缺陷磷化物：实现原子厚度器件。

Journal of Physics D: Applied Physics Pub Date : 2024-07-11 DOI: 10.1088/1361-6463/ad61f7

Djuric Brice Talonpa Tchoffo, Ismail Benabdallah, A. aberda, P. Neugebauer, A. Belhboub, A. El Fatimy

引用次数: 0

The study of interface quality in HfO2/Si films probed by second harmonic generation 利用二次谐波发生探测 HfO2/Si 薄膜中的界面质量

Journal of Physics D: Applied Physics Pub Date : 2024-07-11 DOI: 10.1088/1361-6463/ad61f9

Li Ye, Libo Zhang, Shaotong Wang, Weiwei Zhao, Chongji Huang, Wenshuai Gao, Xue Liu, Tiaoyang Li, Tao Li, Tai Min, Mingliang Tian, Xuegang Chen

{"title":"The study of interface quality in HfO2/Si films probed by second harmonic generation","authors":"Li Ye, Libo Zhang, Shaotong Wang, Weiwei Zhao, Chongji Huang, Wenshuai Gao, Xue Liu, Tiaoyang Li, Tao Li, Tai Min, Mingliang Tian, Xuegang Chen","doi":"10.1088/1361-6463/ad61f9","DOIUrl":"https://doi.org/10.1088/1361-6463/ad61f9","url":null,"abstract":"\u0000 Time-dependent second harmonic generation (TD-SHG) is an emergent sensitive and non-contact method to qualitatively/quantitively characterize the semiconductor materials, which is closely related to the interfacial electric field. Here, the TD-SHG technique is used to study the interface quality of atomic layer deposited 15 nm HfO2/Si (n-type/p-type) samples, which is compared to the conventional electrical characterization method. A relation between the interface state density and the time constant extracted from TD-SHG is revealed, indicating that TD-SHG is an effective method to evaluate the interface state density. In addition, the dopant type and dopant density can be disclosed by resolving the dynamic process of TD-SHG. The scenario of interfacial electric field between the initial electric field and the laser-induced electric field is proposed to explain the time-dependent evolution of SHG signal. In conclusion, the TD-SHG is a sensitive and non-contact method as well as simple and fast to characterize the semiconductor materials, which may facilitate the semiconductor in-line testing.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141656078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Oxygen-mediated defect evolution and interface analysis of MoOx/n-Si devices 氧介导的缺陷演化和氧化钼/硅器件的界面分析

Journal of Physics D: Applied Physics Pub Date : 2024-07-10 DOI: 10.1088/1361-6463/ad6166

Abhishek Kumar, S. Tomer, .. Vandana, T. Fix, Mrinal Dutta, S. K. Srivastava, Pathi Prathap

{"title":"Oxygen-mediated defect evolution and interface analysis of MoOx/n-Si devices","authors":"Abhishek Kumar, S. Tomer, .. Vandana, T. Fix, Mrinal Dutta, S. K. Srivastava, Pathi Prathap","doi":"10.1088/1361-6463/ad6166","DOIUrl":"https://doi.org/10.1088/1361-6463/ad6166","url":null,"abstract":"\u0000 The performance of MoOx based devices is highly influenced by the presence of oxygen vacancies and the trap density at the oxide-semiconductor interface. This paper presents a detailed investigation of the surface states present at the MoOx/c-Si interface through capacitance and conductance methods. Thin films of MoOx were deposited on n-Si using DC reactive sputtering of Mo under varying oxygen flow rates and studied the modulation of metal-insulator-semiconductor (MIS) device parameters using appropriate analysis methods. The capacitance-voltage (CV) analysis reveals the formation of nearly dielectric films at an intermediate oxygen flow rate of 15 sccm, exhibiting a dielectric constant of 24 and negative fixed charges of approximately 1.81x1012 cm-2. Work function evaluated from the Kelvin probe measurements was found to be maximum of 5.08 eV for the films deposited at the intermediate oxygen flow rate of 15 sccm. Furthermore, admittance analysis was performed on all the films to determine the loss mechanism in different regions, ranging from inversion to accumulation. Parallel conductance for different bias conditions was studied and observed the domination of oxide traps at the higher oxygen flow (> 20 sccm). Investigation of deep level defects were performed using the deep level transient spectroscopy (DLTS) in the temperature range of 100 K to 475 K, along with the C-V measurements. A transition in C-V behavior was observed below room temperature that shows the minority carrier response time is controlled by generation-recombination at low temperatures and by diffusion at high temperatures. The X-ray photoelectron spectroscopy (XPS) measurements showed that the films are sub-stoichiometric with the dominant oxidation state of Mo+6. The results have been discussed and presented in detail.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141659239","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Highly efficient meta-lens integrated holographic surface antenna 高效元透镜集成全息表面天线

Journal of Physics D: Applied Physics Pub Date : 2024-07-10 DOI: 10.1088/1361-6463/ad6167

Yazheng Hao, Rui Yang, Chunhui Li, Yan Wang

引用次数: 0

Design strategies and applications of atomically dispersed aerogel catalysts prepared from metal hydrogel formation 由金属水凝胶形成制备的原子分散气凝胶催化剂的设计策略和应用

Journal of Physics D: Applied Physics Pub Date : 2024-07-09 DOI: 10.1088/1361-6463/ad60d5

Wenyu Li, Yang Chen, Chun Liu, Yi Zhang

引用次数: 0

Immobilizing Antibody Biorecognition Layers on Au-TiO2 Thin Films: Direct (physisorption) vs. DSP-crosslinking (chemisorption) Surface Functionalization 在金-二氧化钛薄膜上固定抗体生物识别层：直接（物理吸附）与 DSP-交联（化学吸附）表面功能化

Journal of Physics D: Applied Physics Pub Date : 2024-07-09 DOI: 10.1088/1361-6463/ad60d7

Diana I. Meira, Ana I. Barbosa, M. Proença, Patrícia Pereira-Silva, J. Borges, V. Correlo, Rui L Reis, Filipe Vaz

{"title":"Immobilizing Antibody Biorecognition Layers on Au-TiO2 Thin Films: Direct (physisorption) vs. DSP-crosslinking (chemisorption) Surface Functionalization","authors":"Diana I. Meira, Ana I. Barbosa, M. Proença, Patrícia Pereira-Silva, J. Borges, V. Correlo, Rui L Reis, Filipe Vaz","doi":"10.1088/1361-6463/ad60d7","DOIUrl":"https://doi.org/10.1088/1361-6463/ad60d7","url":null,"abstract":"\u0000 The immobilization design strategy plays an important role in biosensor development and its sensing performance. Both adsorption (physisorption) and cross-linker functionalization (chemisorption) are common approaches for immobilizing a bioreceptor layer. In this work, these two approaches were studied and compared, envisaging a functional and strongly attached bioreceptor layer onto sputtered Au-TiO2 thin films. DSP cross-linker (Lomant's reagent) was used in the thin film’s functionalization, and the effect of different concentrations on the development of an adhesion layer was investigated. Surface morphology analysis of functionalized thin films suggested the development of uniformly coated self-assembled layers. However, DSP islands with a fractal structure were found for a concentration of 4 mg mL-1. Infrared spectroscopy confirmed the cross-linker functionalization at the thin film’s surface. Confocal microscopy of immobilized fluorescent antibodies revealed that DSP islands improve the chemical surface area available for bioreceptor immobilization. Moreover, an immunoassay using mouse IgG interaction with fluorescent anti-mouse IgG (Fab specific), working as capture and detection antibody, respectively, showed that DSP functionalization favors antibodies orientation and adhesion strength to the surface, when compared to physisorption.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141664487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of humidity and air pressure on thrust characteristics of ion wind propulsion systems 湿度和气压对离子风推进系统推力特性的影响

Journal of Physics D: Applied Physics Pub Date : 2024-07-09 DOI: 10.1088/1361-6463/ad60d8

Yaoxun Zhao, She Chen, Kelin Li, Tianwei Wang, F. Wang

{"title":"Influence of humidity and air pressure on thrust characteristics of ion wind propulsion systems","authors":"Yaoxun Zhao, She Chen, Kelin Li, Tianwei Wang, F. Wang","doi":"10.1088/1361-6463/ad60d8","DOIUrl":"https://doi.org/10.1088/1361-6463/ad60d8","url":null,"abstract":"\u0000 Ion wind propulsion systems have potential applications in the field of unmanned aerial vehicle (UAV) due to their compactness, quiet operation, and simple design. Previous studies have focused on the influences of power source, electrode arrangement, size, and shape on the output thrust characteristics. However, few studies have been performed on the environmental conditions, which can be beneficial for the practical applications of ion wind aircraft in various climatic conditions. In this work, a measurement platform of the output characteristics of ion wind propulsion system under various environmental conditions has been established. The experimental pressure range is 1 to 0.7 atm, and the relative humidity (RH) is 30% to 92%. The effects of air pressure and humidity, and voltage level on the thrust, thrust-to-power radio (TPR) corona current have been investigated. The results show that the corona current and thrust of the wire-wing electrode array decrease with RH within the range of 30% to 80%. Under higher humidity, the corona current and thrust tend to increase at most voltage levels. Moreover, the thrust and current both decrease with reduced pressure when keeping the voltage-to-pressure ratio (U/P) unchanged. It was also found that the thrust is roughly proportional to the square of the pressure. Finally, the possible explanations of the coupled influences on the output characteristics were discussed.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141665676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ambient air-compatible in-situ characterizations of metal halide perovskite for high-efficiency solar cells 用于高效太阳能电池的金属卤化物过磷酸盐的环境空气兼容原位表征

Journal of Physics D: Applied Physics Pub Date : 2024-07-09 DOI: 10.1088/1361-6463/ad60d6

Yanru Guo, Xiaojia Luo, Jinge Han, Haochen Tong, Xue Liu, Ru Li

引用次数: 0

Electric field driven focusing and transport of plasma ion beams by micro-glass capillaries beyond the self-focusing limit 电场驱动微玻璃毛细管聚焦和传输超越自我聚焦极限的等离子体离子束

Journal of Physics D: Applied Physics Pub Date : 2024-07-08 DOI: 10.1088/1361-6463/ad600c

S. Barman, S. Bhattacharjee

{"title":"Electric field driven focusing and transport of plasma ion beams by micro-glass capillaries beyond the self-focusing limit","authors":"S. Barman, S. Bhattacharjee","doi":"10.1088/1361-6463/ad600c","DOIUrl":"https://doi.org/10.1088/1361-6463/ad600c","url":null,"abstract":"\u0000 Micro-glass capillaries emerge as an important tool for the lossless guiding and focusing of ion beams (Takao M Kojima 2018 J. Phys. B: At. Mol. Opt. Phys. 51 042001). The self-focusing mechanism of the capillaries is primarily governed by charged patches induced on their inner walls by the incident beam (Stolterfoht et al 2002 Phys. Rev. Lett. 88 133201). However, the dominance of space charge forces over self-focusing forces in intense (J ∽ 1 A/m2) ion beams establishes a self-focusing limit, posing challenges to beam focusing beyond this limit. In this work, a novel method is introduced, demonstrating electrical control over the charge patch dynamics through an externally applied bias voltage, thereby enabling the focusing of Ar ion beams beyond the self-focusing limit (Maurya et al 2019 J. Phys. D: Appl. Phys. 52 055205). Experimental results reveal that adjusting the biasing voltage allows overcoming the self-focusing limit, resulting in the generation of a high-intensity (Jout\u0000 ∽ 3.05 × 105 A/m2) nano-beam (∽ 160 nm). Furthermore, electrical control is shown to enhance the performance of both straight and tapered capillaries (SC/TC), with the TC being more effective for nano-beam generation. A Particle-In-Cell (PIC) simulation code has been developed to explain the experimental results. The implications of high-intensity nano ion beams in advancing nanopatterning, nanoscale material analysis, and matter wave interferometry, underscore significant contributions to research and innovation within electronics, materials science, nanotechnology, and emerging quantum technologies.","PeriodicalId":507822,"journal":{"name":"Journal of Physics D: Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141668335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0