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Japanese Journal of Applied Physics最新文献

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Impact of ambient moisture on gate controllability in ferroelectric-gate field-effect transistors with bottom-gate geometry 环境湿度对具有底部栅极几何形状的铁电栅极场效应晶体管栅极可控性的影响
Japanese Journal of Applied Physics Pub Date : 2024-07-24 DOI: 10.35848/1347-4065/ad66d8
Sang-Gyu Koh, T. Miyasako, T. Hosokura, E. Tokumitsu
{"title":"Impact of ambient moisture on gate controllability in ferroelectric-gate field-effect transistors with bottom-gate geometry","authors":"Sang-Gyu Koh, T. Miyasako, T. Hosokura, E. Tokumitsu","doi":"10.35848/1347-4065/ad66d8","DOIUrl":"https://doi.org/10.35848/1347-4065/ad66d8","url":null,"abstract":"\u0000 Ferroelectric-gate field-effect transistors (FeFETs) with a bottom-gate geometry consisting of a ferroelectric HfO2 gate and an oxide channel have been intensively studied in recent years. However, there has been no detailed investigation into the impact of atmospheric exposure on device performance, even though the channel is often exposed to ambient air for process simplification, especially at the research stage. In this study, the ambient stability of an indium tin oxide channel FeFET with a ferroelectric Ce-HfO2 bottom gate was investigated. We found that ambient degradation of the gate controllability was caused by an increase in physisorbed water in the device owing to the intrusion of moisture. Mobile ions, such as H+, which can easily move through a network of hydrogen bonds formed by adjacent physisorbed water, may compensate for ferroelectric polarization. Finally, we demonstrated that the observed degradation can be managed effectively without compromising the original device characteristics using Al2O3 passivation gently formed via plasma-free deposition.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"93 7","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141808131","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Metallic nanofilms on Si(100) and SiO2 grown with a ruthenium precursor 用钌前驱体在 Si(100) 和 SiO2 上生长的金属纳米薄膜
Japanese Journal of Applied Physics Pub Date : 2024-07-23 DOI: 10.35848/1347-4065/ad66a1
L. Bolotov, Y. Kotsugi, Tomohiro Tsugawa, S. Asanuma, Noriyuki Uchida
{"title":"Metallic nanofilms on Si(100) and SiO2 grown with a ruthenium precursor","authors":"L. Bolotov, Y. Kotsugi, Tomohiro Tsugawa, S. Asanuma, Noriyuki Uchida","doi":"10.35848/1347-4065/ad66a1","DOIUrl":"https://doi.org/10.35848/1347-4065/ad66a1","url":null,"abstract":"\u0000 Ruthenium (Ru) nanofilms (<3 nm) were prepared using tricarbonyl(trimethylenemethane)ruthenium, Ru(TMM)(CO)3 at 230 oC. We show that the surface morphology and electrical conductance of Ru nanofilms are substantially different on H:Si(100) and SiO2/Si(100) substrates. Two-dimensional (2D) Ru nanofilms (~1 nm) were formed on H:Si(100), while thick (~3 nm) granular Ru films were formed on SiO2 substrate under the same growth conditions, as confirmed by cross-sectional transmission electron microscopy and x-ray photoelectron spectroscopy. Using scanning probe microscopy, the metallic conductance of Ru grains on H:Si(100) substrates was recognized. On ultrathin (1 nm) SiO2/Si(100) substrates, the spatial separation of Ru grains facilitates the single electron tunneling (SET) phenomenon in the double-barrier tunneling junction structure. The results emphasized the difference in carrier transport in Ru nanofilms on Si and SiO2 substrates.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"90 26","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141812259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Advancing piezoelectric properties of barium titanate ceramic through AC + DC field poling over Curie temperature 通过交流+直流场极化提高钛酸钡陶瓷在居里温度以上的压电特性
Japanese Journal of Applied Physics Pub Date : 2024-07-23 DOI: 10.35848/1347-4065/ad6670
Adisu Tsige Shibiru, I. Fujii, Piyush Sapkota, Hyunwook Nam, G. Khanal, S. Ueno, Satoshi Wada
{"title":"Advancing piezoelectric properties of barium titanate ceramic through AC + DC field poling over Curie temperature","authors":"Adisu Tsige Shibiru, I. Fujii, Piyush Sapkota, Hyunwook Nam, G. Khanal, S. Ueno, Satoshi Wada","doi":"10.35848/1347-4065/ad6670","DOIUrl":"https://doi.org/10.35848/1347-4065/ad6670","url":null,"abstract":"\u0000 The significance of increased domain nucleation sites from smaller grain size (GS) of barium titanate (BT) ceramics on piezoelectric properties was analyzed for different types of poling, including conventional direct current (DC) poling, modified DC poling, and alternating current (AC) plus DC poling, conducted at different poling temperature. The AC plus DC poling conducted at 1.5 ℃ above the Curie temperature showed the highest piezoelectric constant (d\u0000 33) of 528 pC/N, with an average domain size of 100 nm observed after poling. The d\u0000 33 improvement was attributed to smaller domain size formation from field-induced phase transitions and homogenous distribution of point defects achieved by the AC field. Comparative analysis with larger grain BT ceramics under AC plus DC poling suggests that defects and volume fraction of grain boundaries in BT ceramics could have an effect on domain sizes.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"113 12","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141811933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Abnormal photoluminescence properties of InAs/InAsSb in-plane ultrahigh-density quantum dots InAs/InAsSb 面内超高密度量子点的异常光致发光特性
Japanese Journal of Applied Physics Pub Date : 2024-07-23 DOI: 10.35848/1347-4065/ad66a0
Sim Jui Oon, Takumi Ohyama, Naoya Miyashita, Koichi Yamaguchi
{"title":"Abnormal photoluminescence properties of InAs/InAsSb in-plane ultrahigh-density quantum dots","authors":"Sim Jui Oon, Takumi Ohyama, Naoya Miyashita, Koichi Yamaguchi","doi":"10.35848/1347-4065/ad66a0","DOIUrl":"https://doi.org/10.35848/1347-4065/ad66a0","url":null,"abstract":"\u0000 InAs/InAsSb ultrahigh-density quantum dots (UHD QDs) with a density of 1×1012 cm-2 were fabricated using molecular beam epitaxy, and their photoluminescence (PL) properties were characterized. Through temperature dependences of PL energy, intensity and decay time of UHD QDs, it was found that in-plane strong coupling between adjacent QDs of excited and ground states due to homogeneous broadening of QD levels progressed above 60 K and above 100 K, respectively. The findings regarding the strong coupling at ground states were consistent with the temperature dependence of PL minimum energy outlined in Appendix. In addition, abnormal phenomenon in PL full width at half maximum (FWHM) was attributed to the in-plane miniband formation resulting from strong coupling.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"14 12","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141810490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Energetics and electronic structure of graphene nanoscrolls 石墨烯纳米卷的能量学和电子结构
Japanese Journal of Applied Physics Pub Date : 2024-07-23 DOI: 10.35848/1347-4065/ad669f
Yanlin Gao, M. Maruyama, Susumu Okada
{"title":"Energetics and electronic structure of graphene nanoscrolls","authors":"Yanlin Gao, M. Maruyama, Susumu Okada","doi":"10.35848/1347-4065/ad669f","DOIUrl":"https://doi.org/10.35848/1347-4065/ad669f","url":null,"abstract":"\u0000 Geometric structures and electronic properties of graphene nanoscrolls have been investigated using the density functional theory. A graphene nanoribbon with a width of 21.37 nm, corresponding to a zigzag ribbon with 100 zigzag C chains, prefers scrolled structures until the innermost shell radius of 0.6 nm because of the competition between the energy gain by the inter-shell van der Waals interaction and the energy cost by the structural strain derived from curvature. The most preferable innermost shell radiuses are 1.3-1.5 nm for the ribbon studied here. The electronic structure of graphene nanoscrolls shows strong position dependence that is sensitive to the shape of nanoscrolls owing to the electrostatic potential modulation by their multi-shell structures.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"22 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141813741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Evaluation of the effect of texture size and rounding process on 3-dimensional flexibility of c-Si wafer 评估纹理尺寸和滚圆工艺对晶体硅晶片三维柔性的影响
Japanese Journal of Applied Physics Pub Date : 2024-07-22 DOI: 10.35848/1347-4065/ad665a
Koki Ide, Tappei Nishihara, Kyotaro Nakamura, Yoshio Ohshita, Tomoyuki Kawatsu, Toshiki Nagai, Noboru Yamada, Trang Phuong Pham, Atsushi Ogura
{"title":"Evaluation of the effect of texture size and rounding process on 3-dimensional flexibility of c-Si wafer","authors":"Koki Ide, Tappei Nishihara, Kyotaro Nakamura, Yoshio Ohshita, Tomoyuki Kawatsu, Toshiki Nagai, Noboru Yamada, Trang Phuong Pham, Atsushi Ogura","doi":"10.35848/1347-4065/ad665a","DOIUrl":"https://doi.org/10.35848/1347-4065/ad665a","url":null,"abstract":"\u0000 Vehicles are expected to be a new application field for solar cells. Since vehicle bodies have complicated three-dimensional curved surfaces designed to improve aerodynamic performance, there is a need for flexible solar cells that can be installed on such surfaces. To this end, research has focused on single-crystalline Si solar cells with high conversion efficiency and reliability, since the flexibility of Si wafers improves as they become thinner. Previous studies have reported that the texture structure to improve the light absorption on the Si wafer surface affects the three-dimensional flexibility. In this work, we perform a Ball-on-Ring test to determine how texture size and rounding treatment affect the flexibility of c-Si wafers and measure the flexibility. The results demonstrate that the rounding process increases flexibility, while the texture size reduction improves flexibility.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"10 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141816458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Syntheses of AlLB14(L=Li or Na) crystals using alkali fluorides and its properties 利用碱氟化物合成 AlLB14（L=Li 或 Na）晶体及其特性
Japanese Journal of Applied Physics Pub Date : 2024-07-22 DOI: 10.35848/1347-4065/ad6659
Takeshi Hagiwara, Kaoru Kouzu, Shigeru Okada, A. Nomura, Kunio Yubuta, T. Shishido, Akira Yoshikawa, T. Mori
{"title":"Syntheses of AlLB14(L=Li or Na) crystals using alkali fluorides and its properties","authors":"Takeshi Hagiwara, Kaoru Kouzu, Shigeru Okada, A. Nomura, Kunio Yubuta, T. Shishido, Akira Yoshikawa, T. Mori","doi":"10.35848/1347-4065/ad6659","DOIUrl":"https://doi.org/10.35848/1347-4065/ad6659","url":null,"abstract":"\u0000 Syntheses of AlLB14 (L=Li or Na or K) crystals were grown using LiF or NaF or KF and crystalline boron powders as the starting materials using high-temperature Al melt at soaking temperature 1573~1773 K for soaking time 5 h under an Ar atmosphere. A new compound AlNaB14 and AlLiB14 crystals were obtained from LiF or NaF and B powders, and the atomic ratios (n=B/L=2.0~4.0) of starting materials. AlKB14 crystal was not obtained from KF and B powders as starting materials. The micro-Vickers hardness of AlLB14 crystals is 24(±1) GPa for AlLiB14 and 25(±1) GPa for AlNaB14. The oxidation initiation temperature of AlLiB14 was about 815 K, and the peak due to the exothermic reaction was about 960 K for AlLiB14 and about 990 K for AlNaB14. The final oxidation products were Li2B2O4, Al4B2O9, B2O3 and amorphous phases. The values for the electrical resistivity of the AlLB14 compound were 2.4~157 Ω·cm","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"6 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141816136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal stability of TiN gate electrode for 4H-SiC MOSFETs and integrated circuits 用于 4H-SiC MOSFET 和集成电路的 TiN 栅极的热稳定性
Japanese Journal of Applied Physics Pub Date : 2024-07-22 DOI: 10.35848/1347-4065/ad665b
Vuong Van Cuong, Tatsuya Meguro, Seiji Ishikawa, Tomonori Maeda, H. Sezaki, S. Kuroki
{"title":"Thermal stability of TiN gate electrode for 4H-SiC MOSFETs and integrated circuits","authors":"Vuong Van Cuong, Tatsuya Meguro, Seiji Ishikawa, Tomonori Maeda, H. Sezaki, S. Kuroki","doi":"10.35848/1347-4065/ad665b","DOIUrl":"https://doi.org/10.35848/1347-4065/ad665b","url":null,"abstract":"\u0000 In this research, the thermal stability of single stage amplifier based on 4H-SiC MOSFET with a TiN gate electrode was investigated. The results show that, after 100-hour aging at 400℃ in N2 ambient, the amplifier maintained good performance with stable voltage gain. The thermal stability of the amplifier results from the stability of Ni/Nb/4H-SiC source/drain ohmic contact, implanted load resistor, and MOS structure with the TiN gate electrode. The results obtained from the 4H-SiC MOS structure show that the interface trap density at the SiO2/SiC decreases during the aging process. While the gate leakage current of the capacitor based on Al gate electrode increases, it remains stable in structures with TiN gate electrodes after 100-hour aging. The results obtained in this study indicate that TiN is promising for the gate electrode of 4H-SiC MOSFETs for high-temperature applications.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"10 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141814609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultrafast response self-powered UV photodetectors based on ZnO/SiO2/Si heterojunction diodes 基于氧化锌/二氧化硅/硅异质结二极管的超快响应自供电紫外光检测器
Japanese Journal of Applied Physics Pub Date : 2024-07-19 DOI: 10.35848/1347-4065/ad65ab
Samer Abdulsalam Aldhehabi, B. Belkerk, R. Zernadji, Amine Achour, M. Djouadi
{"title":"Ultrafast response self-powered UV photodetectors based on ZnO/SiO2/Si heterojunction diodes","authors":"Samer Abdulsalam Aldhehabi, B. Belkerk, R. Zernadji, Amine Achour, M. Djouadi","doi":"10.35848/1347-4065/ad65ab","DOIUrl":"https://doi.org/10.35848/1347-4065/ad65ab","url":null,"abstract":"\u0000 This paper presents ultrafast response, self-powered UV photodetectors (PDs) based on ZnO/SiO2/Si heterojunction diodes, utilizing zinc oxide (ZnO) nanorods as the photosensitive layer. This configuration results in photodetectors exhibiting unprecedentedly rapid response times, with rise and decay times reduced to 440 ns and 320 ns, respectively. Our study, focusing on ZnO nanorod PDs, not only demonstrates ultrafast response times but also highlights the role of hydrothermal synthesis temperature in tuning the devices' performance. These findings represent a significant leap forward in the development of high-performance, self-powered UV PDs. The effects of different temperature hydrothermal on the morphology, crystal structure, and optoelectrical properties were systematically investigated using various characterization techniques, including field-emission scanning electron microscopy (FE-SEM), energy dispersive X-ray analysis (EDX), X-ray diffraction (XRD) analysis, photoluminescence analysis, and current-voltage (I-V) measurements.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"103 21","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141820985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical properties of unintentionally doped β-Ga2O3 (010) thin films grown by low-pressure hot-wall metalorganic chemical vapor deposition 低压热壁金属有机化学气相沉积法生长的无意掺杂β-Ga2O3 (010) 薄膜的电学特性
Japanese Journal of Applied Physics Pub Date : 2024-07-18 DOI: 10.35848/1347-4065/ad6542
Jun Jason Morihara, Jin Inajima, Zhenwei Wang, Junya Yoshinaga, Shota Sato, Kohki Eguchi, Takuya Tsutsumi, Y. Kumagai, M. Higashiwaki
{"title":"Electrical properties of unintentionally doped β-Ga2O3 (010) thin films grown by low-pressure hot-wall metalorganic chemical vapor deposition","authors":"Jun Jason Morihara, Jin Inajima, Zhenwei Wang, Junya Yoshinaga, Shota Sato, Kohki Eguchi, Takuya Tsutsumi, Y. Kumagai, M. Higashiwaki","doi":"10.35848/1347-4065/ad6542","DOIUrl":"https://doi.org/10.35848/1347-4065/ad6542","url":null,"abstract":"\u0000 We investigated electrical properties of unintentionally doped (UID) Ga2O3 (010) layers grown by low-pressure hot-wall metalorganic chemical vapor deposition from device characteristics of Schottky barrier diodes (SBDs) fabricated on them. Highly resistive properties of the UID Ga2O3 layers were confirmed from current–voltage characteristics. The specific on-resistance of the SBD with the most resistive UID Ga2O3 layer was 2.2 × 107 Ωcm2. Capacitance–voltage characteristics revealed that most of the SBDs had complete depletion of the UID layers at thermal equilibrium, indicating that their residual effective donor densities were less than 3.0 × 1013 cm-3.\u0000","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":" 11","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141824711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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