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Japanese Journal of Applied Physics最新文献

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Scintillator application of CsPbBr3 quantum dots-embedded SiO2 glasses CsPbBr3 量子点嵌入二氧化硅玻璃的闪烁体应用
Japanese Journal of Applied Physics Pub Date : 2024-08-09 DOI: 10.35848/1347-4065/ad6dc1
Takumi Kato, Daiki Shiratori, Akito Watanabe, Y. Fujimoto, K. Asai, A. Nishikawa, Kai Okazaki, D. Nakauchi, N. Kawaguchi, Takayuki Yanagida
{"title":"Scintillator application of CsPbBr3 quantum dots-embedded SiO2 glasses","authors":"Takumi Kato, Daiki Shiratori, Akito Watanabe, Y. Fujimoto, K. Asai, A. Nishikawa, Kai Okazaki, D. Nakauchi, N. Kawaguchi, Takayuki Yanagida","doi":"10.35848/1347-4065/ad6dc1","DOIUrl":"https://doi.org/10.35848/1347-4065/ad6dc1","url":null,"abstract":"\u0000 CsPbBr3 quantum dots-embedded SiO2 glasses were synthesized by the spark plasma sintering method as novel scintillators for γ-ray detectors. Their optical and scintillation properties were investigated to examine the scintillation performance. The XRD patterns observed a halo peak of the SiO2 glass phase and diffraction peaks of CsPbBr3. An emission peak due to CsPbBr3 quantum dots was detected at around 515 nm in both PL and scintillation spectra. The PL and scintillation decay time curves included a component of nanosecond order, resulting from CsPbBr3 quantum dots. Under γ-ray irradiation from 137Cs, the LY of the 0.2% CsPbBr3-embedded SiO2 glass was 150 photons/MeV.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"51 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141922699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of bias voltage on the Ar/CH2F2/O2 plasma etching of Si3N4 films 偏置电压对 Ar/CH2F2/O2 等离子刻蚀 Si3N4 薄膜的影响
Japanese Journal of Applied Physics Pub Date : 2024-08-08 DOI: 10.35848/1347-4065/ad6d20
Shuichi Kuboi, Junji Kataoka, Daiki Iino, Kazuaki Kurihara, Hirotaka Toyoda, Hiroyuki Fukumizu
{"title":"Influence of bias voltage on the Ar/CH2F2/O2 plasma etching of Si3N4 films","authors":"Shuichi Kuboi, Junji Kataoka, Daiki Iino, Kazuaki Kurihara, Hirotaka Toyoda, Hiroyuki Fukumizu","doi":"10.35848/1347-4065/ad6d20","DOIUrl":"https://doi.org/10.35848/1347-4065/ad6d20","url":null,"abstract":"\u0000 The etching mechanism of silicon nitride (Si3N4) film depending on peak-to-peak bias voltage (V\u0000 pp) in Ar/CH2F2/O2 gas-mixture plasmas for high-aspect-ratio etching process was investigated. It was observed that the Si3N4-film etch rate initially decreased with increase in the V\u0000 pp up to 3630 V, but then increased beyond this threshold. This unusual etching behavior can be attributed to the formation of a modified layer on the surface of the Si3N4 film. The characteristics of the modified layer, such as thickness and atomic composition, were found to be strongly influenced by the ion energy and gas chemistry of the process conditions.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"51 15","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141929599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Development of a Pb(Zr,Ti)O3 capacitor employing an IrOx/Ir bottom electrode for highly reliable ferroelectric random access memories 开发采用 IrOx/Ir 底电极的 Pb(Zr,Ti)O3电容器，用于高可靠性铁电随机存取存储器
Japanese Journal of Applied Physics Pub Date : 2024-07-26 DOI: 10.35848/1347-4065/ad67e9
Nozomi Sato, Wensheng Wang, T. Eshita, Mitsuaki Oikawa, Masaaki Nakabayashi, K. Takai, Ko Nakamura, Kouichi Nagai, S. Mihara, Y. Hikosaka, H. Saito
{"title":"Development of a Pb(Zr,Ti)O3 capacitor employing an IrOx/Ir bottom electrode for highly reliable ferroelectric random access memories","authors":"Nozomi Sato, Wensheng Wang, T. Eshita, Mitsuaki Oikawa, Masaaki Nakabayashi, K. Takai, Ko Nakamura, Kouichi Nagai, S. Mihara, Y. Hikosaka, H. Saito","doi":"10.35848/1347-4065/ad67e9","DOIUrl":"https://doi.org/10.35848/1347-4065/ad67e9","url":null,"abstract":"\u0000 We successfully developed highly {111} oriented metal-organic chemical vapor deposition (MOCVD) Pb(Zr,Ti)O3 (PZT) using IrOx/Ir instead of Ir as a bottom electrode. The {111} PZT orientation strongly depends on the IrOx thickness and the O2 content of the atmosphere (PO2) during IrOx deposition. The Ir surface easily oxidizes during PZT deposition and becomes rough, which results in poor {111} orientation of PZT. IrOx prevents the Ir surface from oxidizing and eventually changes Ir metal by O2 reduction after completing PZT deposition. We can obtain highly {111} oriented PZT by optimizing the IrOx thickness and PO2.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"55 31","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141799923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monomer diffusion tendencies in complex-shaped materials by vapor deposition polymerization 气相沉积聚合法复杂形状材料中的单体扩散趋势
Japanese Journal of Applied Physics Pub Date : 2024-07-26 DOI: 10.35848/1347-4065/ad6813
Ryo Tabata, Moeka Oosumi, Ryosuke Matsubara, A. Kubono
{"title":"Monomer diffusion tendencies in complex-shaped materials by vapor deposition polymerization","authors":"Ryo Tabata, Moeka Oosumi, Ryosuke Matsubara, A. Kubono","doi":"10.35848/1347-4065/ad6813","DOIUrl":"https://doi.org/10.35848/1347-4065/ad6813","url":null,"abstract":"\u0000 Conformal coatings are crucial for various applications. In this study, we investigate polyurea coatings on complex-shape polytetrafluoroethylene (PTFE) membranes using vapor deposition polymerization. The diffusion mechanism involves monomer adsorption and desorption on PTFE fibers, enhanced by an increased substrate temperature, facilitating monomer diffusion. A system pressure of 100 Pa promoted monomer collisions, forming oligomers with lower desorption rates, aiding polymer thin-film formation. The combination of high substrate temperature for diffusion and gas-phase oligomer formation resulted in uniform polyurea coatings across the PTFE membrane. A non-exhaustion method provided an extensive monomer diffusion, achieving a thorough polyurea deposition throughout the membrane structure.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"35 22","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141800593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quantification of radicals in aqueous solution by positronium lifetime: an experiment using a clinical PET scanner 利用正电子寿命量化水溶液中的自由基：使用临床 PET 扫描仪进行的实验
Japanese Journal of Applied Physics Pub Date : 2024-07-25 DOI: 10.35848/1347-4065/ad679a
S. Takyu, K. Matsumoto, Tetsuya Hirade, F. Nishikido, G. Akamatsu, H. Tashima, M. Takahashi, Taiga Yamaya
{"title":"Quantification of radicals in aqueous solution by positronium lifetime: an experiment using a clinical PET scanner","authors":"S. Takyu, K. Matsumoto, Tetsuya Hirade, F. Nishikido, G. Akamatsu, H. Tashima, M. Takahashi, Taiga Yamaya","doi":"10.35848/1347-4065/ad679a","DOIUrl":"https://doi.org/10.35848/1347-4065/ad679a","url":null,"abstract":"\u0000 Positrons and electrons sometimes exist as the unstable species positronium (Ps) in living organisms. The time it takes for Ps to annihilate represents the Ps lifetime and it varies depending on the surrounding electron density. The Ps lifetime may add new biological information to PET scan information. To discuss the feasibility of quantifying (free) radicals in vivo by the Ps lifetime, we used a clinical PET system to make Ps lifetime measurements in aqueous solutions containing radicals. The results suggested that differences in radical concentrations in aqueous solutions of the order of a few mM could be quantified by the Ps lifetime if the counting statistic of the time difference spectra was more than 108 events. This concentration was much higher than the radical concentration generated in the physiological functions of living organisms. We concluded that quantification of radicals generated in vivo by using the Ps lifetime is practically hopeless.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"28 11","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141805033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-performance negative differential resistance characteristics in homoepitaxial AlN/GaN double-barrier resonant tunneling diodes 同层外延氮化铝/氮化镓双势垒谐振隧穿二极管的高性能负差分电阻特性
Japanese Journal of Applied Physics Pub Date : 2024-07-25 DOI: 10.35848/1347-4065/ad679b
Fang Liu, J. Xue, zumao li, guanlin wu, JiaJia Yao, jinyuan yuan, RenJie Liu, cheng zhao, wenbo sun, Kai Zhang, Jincheng Zhang, Yue Hao
{"title":"High-performance negative differential resistance characteristics in homoepitaxial AlN/GaN double-barrier resonant tunneling diodes","authors":"Fang Liu, J. Xue, zumao li, guanlin wu, JiaJia Yao, jinyuan yuan, RenJie Liu, cheng zhao, wenbo sun, Kai Zhang, Jincheng Zhang, Yue Hao","doi":"10.35848/1347-4065/ad679b","DOIUrl":"https://doi.org/10.35848/1347-4065/ad679b","url":null,"abstract":"\u0000 In this work, high-performance negative differential resistance (NDR) characteristics are demonstrated in homoepitaxial AlN/GaN double-barrier resonant tunneling diodes (RTDs). The devices are grown by plasma-assisted molecular beam epitaxy on bulk GaN substrates and exhibit robust and repeatable NDR at room-temperature. High peak current density of 183 kA/cm2 is simultaneously demonstrated with a large peak-to-valley current ratio of 2.07, mainly benefiting from the significantly reduced dislocation density and improved hyper-abrupt heterointerfaces in the active region, which boosts the electron quantum transport in the resonant tunneling cavity. The achievement shows the promising potential to enhance the oscillation frequency and output power of GaN-based RTD oscillator, an imperative for next generation high-power solid-state compact terahertz oscillators application.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"7 5","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141803296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dielectric properties and microstructure of BaTiO3-PTFE composites via cold sintering process 通过冷烧结工艺获得的 BaTiO3-PTFE 复合材料的介电性能和微观结构
Japanese Journal of Applied Physics Pub Date : 2024-07-25 DOI: 10.35848/1347-4065/ad6776
Takashi Nunokawa, Kenji Takashima, Kotaro Mizuno, Clive A. Randall
{"title":"Dielectric properties and microstructure of BaTiO3-PTFE composites via cold sintering process","authors":"Takashi Nunokawa, Kenji Takashima, Kotaro Mizuno, Clive A. Randall","doi":"10.35848/1347-4065/ad6776","DOIUrl":"https://doi.org/10.35848/1347-4065/ad6776","url":null,"abstract":"\u0000 Cold Sintering Process is capable of densifying ceramics and metal powders with other phases into composite materials without inducing chemical reactions between the constituent phases or causing decomposition of any phases. In this study, we considered the co-sintering of BaTiO3 powders with polytetrafluoroethylene (PTFE) in the grain boundaries. We examined microstructure and dielectric properties of these composites with different volume fractions of PTFE. The composites were highly dispersive from microstructure and general mixing laws, due to using fine PTFE. Transmission electron microscopy studies demonstrated that the thickness of the PTFE in the grain boundaries was determined with different volume fractions of PTFE. The cold-sintered BaTiO3 composites had high volume resistivity (>1011 Ω·cm), enhancing the resistivity of the cold-sintered pure BaTiO3 using Ba(OH)2･8H2O transient phase. Reliability tests, such as breakdown strength and J-t curves, were conducted, the reliability improved by using fine powders of PTFE with controlled mixing.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"43 9","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141803873","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Li concentration on second harmonic generation from widegap ZnMgO thin films 锂浓度对宽隙 ZnMgO 薄膜二次谐波产生的影响
Japanese Journal of Applied Physics Pub Date : 2024-07-24 DOI: 10.35848/1347-4065/ad66da
Lei Meng, Xueyou Yuan, Junjie Gao, Wenkai Liu, Xiao-Guang Yang, T. Zhai, T. Yamada
{"title":"Effect of Li concentration on second harmonic generation from widegap ZnMgO thin films","authors":"Lei Meng, Xueyou Yuan, Junjie Gao, Wenkai Liu, Xiao-Guang Yang, T. Zhai, T. Yamada","doi":"10.35848/1347-4065/ad66da","DOIUrl":"https://doi.org/10.35848/1347-4065/ad66da","url":null,"abstract":"\u0000 Widegap ZnMgO thin films hold great potential for applications to high-efficiency generation of deep ultraviolet laser via frequency conversion, because of low light propagation loss and reversible polarization. In this work, we studied the effect of Li concentration on the second harmonic generation (SHG) of a-axis oriented ZnMgO thin films with an optical bandgap of about 3.96 eV. The SHG intensity per unit thickness from the ZnMgO thin film with a small Li concentration is approximately 10.7 times larger than the one without Li incorporation. The Li incorporation obviously enlarges interplanar spacing of (11-20) plane and reduces leakage current by 3 orders of magnitude. X-ray photoelectron spectroscopy measurements suggest the Li incorporation enhances SHG via enhancing electronic polarization. These findings uncover defect complexes based on Li interstitials in oxygen octahedron play a very important role in enhancing the nonlinear polarization of widegap ZnMgO thin films under optical frequency electric field.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"43 8","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141808268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of electron extraction from a 40.68 MHz radiofrequency inductive plasma source 40.68 MHz 射频感应等离子体源的电子萃取特征
Japanese Journal of Applied Physics Pub Date : 2024-07-24 DOI: 10.35848/1347-4065/ad66d9
Kodai Kikuchi, Kazunori Takahashi
{"title":"Characterization of electron extraction from a 40.68 MHz radiofrequency inductive plasma source","authors":"Kodai Kikuchi, Kazunori Takahashi","doi":"10.35848/1347-4065/ad66d9","DOIUrl":"https://doi.org/10.35848/1347-4065/ad66d9","url":null,"abstract":"\u0000 An electron current is extracted from a 40.68 MHz inductively coupled plasma source, in which a grounded ion collector electrode is installed to maintain the charge neutrality, by applying a positive voltage to a metallic plate located downstream of the source. The ion collector has an exit orifice of either 20 mm or 2.2 mm in diameter, showing a larger electron extraction current for the 2.2-mm-diameter case. The result is discussed with a global model, implying a higher plasma density for the 2.2-mm-diameter case due to the increased neutral pressure in the source. Metallic and insulator exit having the 2.2-mm-diameter orifice are tested, providing a larger electron extraction current for the metallic case despite a small fraction of a change in the total ion collection area. It is speculated that the electron extraction current is affected by the ion collection near the electron extraction hole and the potential distribution.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"87 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141807825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mechanical properties of Si(1-x)-C(x): strength and stiffness of materials using LAMMPS molecular dynamics simulation Si(1-x)-C(x) 的机械特性：使用 LAMMPS 分子动力学模拟材料的强度和刚度
Japanese Journal of Applied Physics Pub Date : 2024-07-24 DOI: 10.35848/1347-4065/ad66d7
Clint Eldrick Rey Petilla, Catherine Joy Dela Cruz, C. L. Mahinay
{"title":"Mechanical properties of Si(1-x)-C(x): strength and stiffness of materials using LAMMPS molecular dynamics simulation","authors":"Clint Eldrick Rey Petilla, Catherine Joy Dela Cruz, C. L. Mahinay","doi":"10.35848/1347-4065/ad66d7","DOIUrl":"https://doi.org/10.35848/1347-4065/ad66d7","url":null,"abstract":"\u0000 This study investigated the mechanical properties (elastic modulus, tensile strength, yield strength, and toughness) of different percent C of Silicon Carbide (SiC) using molecular dynamics simulations via the Large-scale Atomic/Molecular Massively Parallel Simulator (LAMMPS) with the uniaxial tensile test at four strain rates: 0.1, 0.5, 1.0, and 5.0 m/s, using the Tersoff potential. The simulation uses 20×20×20 atoms (108.6Å×108.6Å×108.6Å) of diamond cubic structure of Si, then carbon atoms were placed randomly at 5% intervals from 0-50 percent C. Results show improved mechanical properties when increasing percent C until peaking at 25%, before decreasing. This is caused by the shortest bond length at 25 percent C from the increase of Si=C using the Radial Distribution Function analysis. Increasing the strain rate generally improves the mechanical properties of the material. The deformation mechanism shows that increasing (decreasing) strain rate generally results in multiple (lesser) failure points with a ductile (brittle) fracture mode.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"45 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141806927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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