ECS Journal of Solid State Science and Technology最新文献_第6页

Impacts of Low Energy Argon Beam on Enhancing the Surface Wettability and Electrical Performance of CA/PANI Films 低能量氩气束对提高 CA/PANI 薄膜表面润湿性和电气性能的影响

ECS Journal of Solid State Science and Technology Pub Date : 2024-04-18 DOI: 10.1149/2162-8777/ad405a

Reem Altuijri, A. Atta, E. Abdeltwab, M. M. Abdelhamied

{"title":"Impacts of Low Energy Argon Beam on Enhancing the Surface Wettability and Electrical Performance of CA/PANI Films","authors":"Reem Altuijri, A. Atta, E. Abdeltwab, M. M. Abdelhamied","doi":"10.1149/2162-8777/ad405a","DOIUrl":"https://doi.org/10.1149/2162-8777/ad405a","url":null,"abstract":"\u0000 This work study the effects of argon beam irradiation on surface properties of CA/PANI films using cold cathode source with varying ion fluences (4×1014, 8×1014, and 12×1014 ions/cm2). The EDX, SEM and FTIR methods verified successful fabrication of the composites. Surface free energy, contact angle, and work of adhesion were measured for both the pure and irradiated films. Raising the ion flux from 4x1014 ions.cm-2 to 12x1014 ions.cm-2 it decreases the contact angle of CA/PANI from 62.1o to 43.4o and increases the surface free energy from 46.7 to 63.9 mJ/m2. The results showed that the CA/PANI changed after exposed to radiation, proving that the irradiated surface properties were improved. In addition, their electrical conductivity was tested in the frequency range of 50 to106 Hz for CA/PANI films. When subjected to 12x1014 ions.cm-2, the conductivity rose from 1.1×10-8 S/cm for CA/PANI to 6.5×10-7 S/cm. The results showed that the irradiated CA/PANI had better electrical and surface properties, which is crucial for many devices including batteries and supercapacitors","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140688645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Highly Efficient Non-Enzymatic Electrochemical Glucose Biosensor Based on Copper Metal Organic Framework Coated on Graphite Sheet 基于石墨片铜金属有机框架的高效非酶电化学葡萄糖生物传感器

ECS Journal of Solid State Science and Technology Pub Date : 2024-04-17 DOI: 10.1149/2162-8777/ad3fe5

Deepa Kumari, Megha Prajapati, Chhaya Ravi Kant

{"title":"Highly Efficient Non-Enzymatic Electrochemical Glucose Biosensor Based on Copper Metal Organic Framework Coated on Graphite Sheet","authors":"Deepa Kumari, Megha Prajapati, Chhaya Ravi Kant","doi":"10.1149/2162-8777/ad3fe5","DOIUrl":"https://doi.org/10.1149/2162-8777/ad3fe5","url":null,"abstract":"\u0000 Detection of glucose is highly informative, creating a constant demand for fabricating high-precision glucose biosensors. Metal–organic frameworks, a family of porous materials renowned for their tunability, can be an excellent choice for developing such sensors. We have developed a highly-sensitive, non-enzymatic sensor for electrochemical detection of glucose fabricated using Copper Metal–Organic Framework (Cu MOF), synthesized by a simple, room-temperature stirring method using Benzene-1,3,5-tricarboxylic acid (BTC) as ligand and Copper nitrate trihydrate as precursor. The synthesized nanostructure was characterized using Fourier transform infrared spectroscopy, scanning electron microscopy, and energy-dispersive X-ray analytical techniques. Powder X-ray diffraction study and thermogravimetric analysis were also done. Further, Brunnauer-Emmett-Teller analysis revealed the porous nature of Cu MOF. The materials exhibited strong electro-catalytic activity for glucose oxidation as revealed from cyclic voltammetry and chronoamperometric studies done under alkaline pH conditions. The Cu MOF deposited on a conducting graphite sheet electrode displayed a significantly low detection limit of 0.019 mM through a broad detection range (1–15 mM) and a strong sensitivity of 229.4 μAmM-1 cm2. Overall, the Cu MOF/GS exhibits exceptional stability, short response time (less than 1s), and good repeatability and reproducibility, making it a promising future material for non-enzymatic glucose detection.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140690605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation of Magnetocaloric Effect and Critical Field Analysis of Nd0.7-xLaxSr0.3MnO3 (x = 0.0 - 0.3) Manganites Nd0.7-xLaxSr0.3MnO3 (x = 0.0 - 0.3) 锰矿的磁焦效应研究和临界磁场分析

ECS Journal of Solid State Science and Technology Pub Date : 2024-04-17 DOI: 10.1149/2162-8777/ad3fe7

Sudarsan Vadnala, T. D. Rao, S. Asthana, M. Pal

{"title":"Investigation of Magnetocaloric Effect and Critical Field Analysis of Nd0.7-xLaxSr0.3MnO3 (x = 0.0 - 0.3) Manganites","authors":"Sudarsan Vadnala, T. D. Rao, S. Asthana, M. Pal","doi":"10.1149/2162-8777/ad3fe7","DOIUrl":"https://doi.org/10.1149/2162-8777/ad3fe7","url":null,"abstract":"\u0000 This research explored the temperature dependence magnetization, magnetocaloric effect, and critical field analysis of Nd0.7-xLaxSr0.3MnO3 (x = 0.0, 0.1, 0.2 and 0.3) manganites samples synthesized through solid state reaction route. The substitution of La3+ at Nd3+ site enhances the A-site average ionic radius ( ) from 1.321 Å (for x = 0.0) to 1.348 Å (for x = 0.3). An increase in reduced the internal chemical pressure inside the lattice such that the Mn-O-Mn bond angle approached 180°. In addition, an increase in Mn-O-Mn bond angle supresses the spin-lattice interaction, which consequently reduces the change in maximum magnetic entropy at the magnetic transition temperature. This implies that variation of A-site average ionic radius influences the change in maximum magnetic entropy. The critical behavior of the manganite samples was addressed based on the data of magnetization measurements around the transition temperature TC. Various techniques such as modified Arrott plot, a Kouvel–Fisher method, and critical isotherm analysis were used to measure the values of the ferromagnetic transition temperature TC, as well as the critical exponents of β, γ, and δ. The magnetic order parameter is very well obeyed with scaling relation with change in magnetic entropy.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140693485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study of the Structural and Switching Properties of Ga2Te5 Crystals Ga2Te5 晶体的结构和开关特性研究

ECS Journal of Solid State Science and Technology Pub Date : 2024-04-16 DOI: 10.1149/2162-8777/ad3f4d

A. Salwa, M. Nassary, H. Shaban, M. Gerges

引用次数: 0

Dielectric Behavior Characterization of RE/BaTiO3 Using Time Domain Spectroscopy: Application on High-Performance Dielectric Resonator Antennas 利用时域光谱分析 RE/BaTiO3 的介电特性：高性能介质谐振器天线的应用

ECS Journal of Solid State Science and Technology Pub Date : 2024-04-16 DOI: 10.1149/2162-8777/ad3f4e

Rachid Chelghoum, Z. Messai, A. Brahimi, N. Bourouba, J. P. Martínez Jiménez, Farid Bouttout

{"title":"Dielectric Behavior Characterization of RE/BaTiO3 Using Time Domain Spectroscopy: Application on High-Performance Dielectric Resonator Antennas","authors":"Rachid Chelghoum, Z. Messai, A. Brahimi, N. Bourouba, J. P. Martínez Jiménez, Farid Bouttout","doi":"10.1149/2162-8777/ad3f4e","DOIUrl":"https://doi.org/10.1149/2162-8777/ad3f4e","url":null,"abstract":"\u0000 We are working to design dielectric resonator antennas based on binary composites made of epoxy resin (RE) and barium titanate (BaTiO3 or BT). The composite samples are prepared at room temperature and under atmospheric pressure. The dielectric properties of these composites were assessed using time domain spectroscopy (TDS). The antennas structure are designed, simulated, and optimized using electromagnetic software Ansys, HFSS. Two types of antennas are studied. The first type consists of a cylindrical dielectric resonator that gives three antenna models in terms of bandwidths, the antennas having a single frequency band, the antennas having dual-band, and the antenna covering three frequency bands, with peak gains varying between 3.68 and 8.15 dB achieved. The second type consists of dielectric resonators composed of two adjacent identical shapes each consisting of a rectangular joined with a cylindrical with the same height. The proposed antenna achieves ultra-wideband with a relative bandwidth of 97% covering the range of 6 to 17.32 GHz, and dual-band circularly polarized (AR<3 dB), the range of the lower band is 9.62 to 10.14 GHz and the range of the upper band is 16.74 to 16.94 GHz. The focus of this research is on creating novel antennas for applications in wireless communications systems.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140696021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bacillus Subtilis-Derived Carbon Nanorods as Efficient ORR Electrocatalysts 枯草芽孢杆菌衍生的碳纳米棒作为高效 ORR 电催化剂

ECS Journal of Solid State Science and Technology Pub Date : 2024-04-16 DOI: 10.1149/2162-8777/ad3f4c

Jintao Sun, Yunpeng Ju, Naibao Huang, Mengqi Bi, Zhen Gao, M. Tang, Wan Li, Xiannian Sun, Guogang Yang

引用次数: 0

Ferroelectric Based Low Power MOSFET for DC/RF Applications: Machine Learning Assisted Statistical Variation Analysis 用于直流/射频应用的基于铁电的低功率 MOSFET：机器学习辅助统计变异分析

ECS Journal of Solid State Science and Technology Pub Date : 2024-04-12 DOI: 10.1149/2162-8777/ad3e2e

Abhay Pratap Singh, R. Baghel, Sukeshni Tirkey

{"title":"Ferroelectric Based Low Power MOSFET for DC/RF Applications: Machine Learning Assisted Statistical Variation Analysis","authors":"Abhay Pratap Singh, R. Baghel, Sukeshni Tirkey","doi":"10.1149/2162-8777/ad3e2e","DOIUrl":"https://doi.org/10.1149/2162-8777/ad3e2e","url":null,"abstract":"\u0000 The analog/radio-frequency (RF) performance of a ferroelectric-based substrate metal oxide semiconductor field effect transistor (FE-MOSFET) with dielectric spacer was designed and proposed. The utilization of gate side wall spacers aims to mitigate short-channel effects (SCEs), and improve overall device performance. Simulation results demonstrate enhanced performance metrics, including improved transconductance (80%), reduced gate leakage (95.4%), and enhanced cutoff frequency (25%), making this design a promising candidate for next-generation high-performance analog and RF applications. Additionally, a novel machine learning (ML)-assisted approach is proposed for investigating the spacer-based FE-MOSFET to reduce the computational cost of numerical TCAD device simulations with the help of conventional- artificial neural network (C-ANN). This method is reported for the first-time ML-based C-ANN for Fe-based low-power MOSFET, matches the similar accuracy of physics-based TCAD with the fastest learning rate and fastest computational speed (in 95-100 seconds). An ML-based prediction replacement for physics-based TCAD is developed to save around 8-10 hours of runtime for each iteration. Because ML predictions can never be 100% accurate, it is essential to ensure approximately zero mean-square error in the final results.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140710673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Chemical Vapor Deposition of Elemental Crystallogen Thin Films 元素结晶源薄膜的化学气相沉积

ECS Journal of Solid State Science and Technology Pub Date : 2024-04-12 DOI: 10.1149/2162-8777/ad3e2f

Pierre Tomasini

{"title":"Chemical Vapor Deposition of Elemental Crystallogen Thin Films","authors":"Pierre Tomasini","doi":"10.1149/2162-8777/ad3e2f","DOIUrl":"https://doi.org/10.1149/2162-8777/ad3e2f","url":null,"abstract":"\u0000 A consolidation of the fundamentals of elemental crystallogen chemical vapor deposition (CVD) is a necessity in view of the extensive evidence accumulated over the last few decades. An in-depth understanding of deposition mechanisms via hydrides asks for a discerning understanding of molecular hydrogen dissociative adsorption, precursor thermal decomposition, and CVD growth rates. With those, a groundbreaking paradigm shift comes to light. GR activation energy E(GR) fingerprints the surface energy. SE ≈ 2E(GR) / (aa), where SE is surface energy, E(GR) activation energy, a lattice parameter. Hydride precursor thermal decomposition consistency with the corresponding solid growth kinetics is demonstrated. Heterogeneous TD kinetics captures a solid deposition and not a gas phase molecular reaction. Thermodynamic equilibrium is achieved during the heterogeneous thermal decomposition of silicon precursors. The popular split between mass-transfer and kinetic regimes is not supported by evidence. Three mechanisms are apparent. The first is controlled by a Si–H bond dissociation energy. The second is controlled by an H–H bond dissociation energy. The last is controlled by a Si–Si bond dissociation energy as lattice sites are sealed off with Si–H bonds.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140710206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electrochemical Supercapacitor Application of Electrochemically Produced Chlorine-Doped Graphene Oxide with Cobalt Sulfide-Based Compounds Produced from Recycling of Spent Li-Ion Batteries 电化学法生产的氯掺杂石墨烯氧化物与废旧锂离子电池回收利用产生的硫化钴基化合物的电化学超级电容器应用

ECS Journal of Solid State Science and Technology Pub Date : 2024-04-12 DOI: 10.1149/2162-8777/ad3e2d

Sezgin Yasa, B. Birol, Metin Gençten

{"title":"Electrochemical Supercapacitor Application of Electrochemically Produced Chlorine-Doped Graphene Oxide with Cobalt Sulfide-Based Compounds Produced from Recycling of Spent Li-Ion Batteries","authors":"Sezgin Yasa, B. Birol, Metin Gençten","doi":"10.1149/2162-8777/ad3e2d","DOIUrl":"https://doi.org/10.1149/2162-8777/ad3e2d","url":null,"abstract":"\u0000 Recycling of LiCoO2 (LCO) based Li-ion batteries for energy storage systems is crucial both environmentally and economically. Reusing active species of LCO cathodes minimizes waste and conserves resources, promoting sustainability in energy storage. We have investigated repurposing cobalt from spent LiCoO2 (LCO) type Li-ion batteries into a cobalt sulfide-based compound (CS), which was then employed as an electrode material in asymmetric supercapacitors. Initially, the LCO cathode compound underwent leaching, resulting in the precipitation of CS utilizing the sulfur source derived from cobalt ions present in the solution. Furthermore, chlorine-doped graphene oxide (Cl-GO) was synthesized via the chronoamperometric method utilizing a 5 M perchloric acid solution. Produced CS and Cl-GO were characterized by using spectroscopic and microscopic techniques. The resulting CS and Cl-GO powders were combined to form the composite positive electrode of coin cell type asymmetric supercapacitors (CCTAS), with graphite powder (GP) utilized in the preparation of the negative electrode. CCTAS were also characterized by using electrochemical techniques such as cyclic voltammetry, electrochemical impedance spectroscopy and galvanostatic charge-discharge. The highest areal capacitance, recorded as 101 mF.cm-2 at a scan rate of 10 mV.s-1, was achieved in the CS/Cl-GO%15//GP CCTAS, with a capacitance retention of approximately 94% observed after 1000 cycles.","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140711555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design of Pentacene Thin-Film Transistor Based Hydrogen Gas Sensor with High-K Dielectric Materials for High Sensitivity 利用高介电材料设计基于五碳烯薄膜晶体管的高灵敏度氢气传感器

ECS Journal of Solid State Science and Technology Pub Date : 2024-04-11 DOI: 10.1149/2162-8777/ad3d86

Yogesh Thakur, Balwinder Raj, B. Raj

{"title":"Design of Pentacene Thin-Film Transistor Based Hydrogen Gas Sensor with High-K Dielectric Materials for High Sensitivity","authors":"Yogesh Thakur, Balwinder Raj, B. Raj","doi":"10.1149/2162-8777/ad3d86","DOIUrl":"https://doi.org/10.1149/2162-8777/ad3d86","url":null,"abstract":"\u0000 Electrical properties of an organic field-effect transistor were modelled in top gate top contact (TGTC) geometry and H2 gas sensors were designed for increased sensitivity based on the structure. Safety concerns related to hydrogen usage must be addressed; these hazardous characteristics include a wide flammable range (4-75%) that results in a rapid burning velocity, a low minimum ignition energy (0.017 mJ), a high heat of combustion (143 kJ/g), and the high diffusivity of hydrogen gas (0.61 cm2/s in the air). These characteristics make it impossible to control hydrogen combustion after a specific time. All simulations were performed in the Silvaco TCAD ATLAS tool. We analysed the driving principle of gas sensors and introduced gas sensing properties in OFET using platinum metal at the gate electrode for H2 gas detection. IOFF, ION, and VTH are sensitivity parameters that alter when the metalwork function of the gate changes with respect to the gas present on it. The designed sensor was analysed for different dielectric materials. Results demonstrate that the increase in sensitivity for OFET-based H2 sensors is 73.4 %, 80.7%, 90.5 %, and 95.6 % when the work function changes by 50, 100, 150, and 200 meV for Pt gate electrodes with an increase in dielectric value of insulating layer from SiO2 (3.9) to La2O3 (27). Results were compared with the In1-xGaxAs CGNWFET-based H2 sensor as the work function varies at 200 meV,the sensitivity enhancement with OFET-based H2 sensors is 8.09%","PeriodicalId":504734,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140714366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0