Journal of Applied Physics最新文献_第5页

Crystal orientation control of a-plane AlN films on r-plane sapphire fabricated by sputtering and high-temperature annealing 通过溅射和高温退火在 r 面蓝宝石上制造的 a 面 AlN 薄膜的晶体取向控制

Journal of Applied Physics Pub Date : 2024-05-15 DOI: 10.1063/5.0202824

Yuki Ogawa, R. Akaike, Jiei Hayama, K. Uesugi, K. Shojiki, Toru Akiyama, Takao Nakamura, Hideto Miyake

引用次数: 0

A study on Arctic sea ice dynamics using the continuous spin Ising model 利用连续自旋伊辛模型对北极海冰动力学的研究

Journal of Applied Physics Pub Date : 2024-05-15 DOI: 10.1063/5.0202612

Ellen Wang

引用次数: 0

One-dimensional, multi-fluid model of the plasma-wall transition. II. Negative ions 等离子体-壁过渡的一维多流体模型。II.负离子

Journal of Applied Physics Pub Date : 2024-05-15 DOI: 10.1063/5.0200381

T. Gyergyek, L. Kos, M. Dimitrova, S. Costea, J. Kovačič

{"title":"One-dimensional, multi-fluid model of the plasma-wall transition. II. Negative ions","authors":"T. Gyergyek, L. Kos, M. Dimitrova, S. Costea, J. Kovačič","doi":"10.1063/5.0200381","DOIUrl":"https://doi.org/10.1063/5.0200381","url":null,"abstract":"The plasma-wall transition is investigated by a one-dimensional steady-state multifluid model, which was presented in detail in Part I [T. Gyergyek et al., AIP Adv. 14, 045201 (2024)]. In this work, the plasma-wall transition is analyzed for the case where the plasma consists of singly charged positive ions, electrons, and singly charged negative ions. When the temperature and initial density of the negative ions are varied, a transition between two types of solutions of the model is observed. We call them the low and high solution, with respect to the absolute value of the potential drop. When the density and temperature of the negative ions are above a critical value, the low solution is observed. As the mass of the positive ions increases, these critical values also increase, but only until the ion mass is below about 1000 electron masses. With larger ion masses, the critical density of the negative ions and the temperature no longer change. In the low solution, the potential drop in front of the sheath is determined by the negative ions and is smaller in absolute terms than in the case of the high solution, where the potential drop in front of the sheath is determined by the electrons. If the problem is analyzed on the pre-sheath scale, the transition between the low and high solution is very sharp. However, when the neutrality condition is replaced by the Poisson equation, this transition becomes blurred and the solutions of the model equations exhibit oscillations. The role of the smallness parameter is highlighted. It is shown how the initial electric field is determined. Deviation of the negative ion density profile from the Boltzmann relation is discussed.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140975650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bioconvective peristaltic transport of hydromagnetic Sutterby nanofluid through a chemically activated porous channel with gyrotactic microorganisms 水磁性萨特比纳米流体通过带有陀螺仪微生物的化学活化多孔通道的生物对流蠕动输送

Journal of Applied Physics Pub Date : 2024-05-15 DOI: 10.1063/5.0203027

M. Ajithkumar, R. Meenakumari, G. Sucharitha, M. Vinodkumar Reddy, Khurram Javid, P. Lakshminarayana

{"title":"Bioconvective peristaltic transport of hydromagnetic Sutterby nanofluid through a chemically activated porous channel with gyrotactic microorganisms","authors":"M. Ajithkumar, R. Meenakumari, G. Sucharitha, M. Vinodkumar Reddy, Khurram Javid, P. Lakshminarayana","doi":"10.1063/5.0203027","DOIUrl":"https://doi.org/10.1063/5.0203027","url":null,"abstract":"The main target of this article is to analyze the role of activation energy and thermal radiation effects on the bioconvective peristaltic transport of Sutterby nanofluid in a two-dimensional flexible porous channel with heat and mass transfer. Also, the consequences of Hall current, heat source, and complaint wall properties along with an inclined magnetic field are taken into consideration. The proposed system of governing equations is simplified by using lubrication approximation and solved numerically using MATLAB's bvp5c solver. Further, numerical observations are analyzed to figure out the consequence of different physical parameters on the flow characteristics. According to the observations, it is identified that the Sutterby nanofluid velocity declines with the climb in the damping force parameter, while it enhances with the upsurge in the Darcy number. The Sutterby fluid temperature profile strengthens when the influence of the heat generation and Brinkman number increase, while it depicts the reverse effect with the elevation in the fluid parameter and radiation parameter. The temperature ratio and activation energy parameters were found to have a significant impact on the fluid concentration. The volume of the trapped fluid bolus is an enhancing function of the channel's non-uniformity parameter. Moreover, current work reveals its applicability to recognize the hemodynamic flow analysis and other biofluid movements in the human body and industrial sectors.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140975590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Injection of anomalous-Hall current into a load circuit 向负载电路注入异常霍尔电流

Journal of Applied Physics Pub Date : 2024-05-15 DOI: 10.1063/5.0205911

D. Lacour, M. Hehn, Min Xu, J.-E. Wegrowe

引用次数: 0

Optoelectronically controlled spin-valley filter and nonlocal switch based on an asymmetrical silicene magnetic superconducting heterostructure 基于非对称硅烯磁性超导异质结构的光电控制自旋谷滤波器和非局部开关

Journal of Applied Physics Pub Date : 2024-05-15 DOI: 10.1063/5.0207076

Shuo Ma, Hongmei Zhang, Jianjun Liu, De Liu

引用次数: 0

Role of ultrathin Ti3C2Tx MXene layer for developing solution-processed high-performance low voltage metal oxide transistors 超薄 Ti3C2Tx MXene 层在开发溶液工艺高性能低压金属氧化物晶体管中的作用

Journal of Applied Physics Pub Date : 2024-05-15 DOI: 10.1063/5.0189641

Ankita Rawat, Utkarsh Pandey, Ritesh Kumar Chourasia, Gaurav Rajput, Bhola Nath Pal, Nitesh K. Chourasia, Pawan Kumar Kulriya

{"title":"Role of ultrathin Ti3C2Tx MXene layer for developing solution-processed high-performance low voltage metal oxide transistors","authors":"Ankita Rawat, Utkarsh Pandey, Ritesh Kumar Chourasia, Gaurav Rajput, Bhola Nath Pal, Nitesh K. Chourasia, Pawan Kumar Kulriya","doi":"10.1063/5.0189641","DOIUrl":"https://doi.org/10.1063/5.0189641","url":null,"abstract":"Metal oxide transistors have garnered substantial attention for their potential in low-power electronics, yet challenges remain in achieving both high performance and low operating voltages through solution-based fabrication methods. Optimizing interfacial engineering at the dielectric/semiconductor interface is of utmost importance in the fabrication of high-performance thin film transistors (TFTs). In the present article, a bilayer Ti3C2Tx-MXene/SnO2–semiconductor (Tx stands for surface termination) configuration is used to fabricate a high-performance n-type thin film transistor by using an ion-conducting Li-Al2O3 gate dielectric on a p+-Si substrate, where electrical charges are formed and modulated at the Li-Al2O3/SnO2 interface, and Ti3C2Tx-MXene nanosheets serve as the primary electrical charge channel due to their long lateral size and high mobility. A comparative characterization of two distinct TFTs is conducted, one featuring Ti3C2Tx MXene and SnO2 semiconductor layer and the other with SnO2 only. Notably, the TFT with the Ti3C2Tx MXene layer has shown a significant boost in the carrier mobility (10.6 cm2/V s), leading to remarkable improvements in the on/off ratio (1.3 × 105) and subthreshold swing (194 mV/decade), whereas the SnO2 TFT without the Ti3C2Tx MXene layer shows a mobility of 1.17 cm2/V s with 8.1 × 102 on/off ratio and 387 mV/decade subthreshold swing. This investigation provides a possible way toward the development of high-performance, low-voltage TFT fabrication with the MXene/semiconductor combination.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140976057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancing surface strength of tungsten by gradient nano-grained structure 通过梯度纳米颗粒结构提高钨的表面强度

Journal of Applied Physics Pub Date : 2024-05-15 DOI: 10.1063/5.0191162

Daqian Xu, Zhifeng Huang, Like Xu, Guanchao Yin, Yaojun Lin, Qiang Shen, Fei Chen

{"title":"Enhancing surface strength of tungsten by gradient nano-grained structure","authors":"Daqian Xu, Zhifeng Huang, Like Xu, Guanchao Yin, Yaojun Lin, Qiang Shen, Fei Chen","doi":"10.1063/5.0191162","DOIUrl":"https://doi.org/10.1063/5.0191162","url":null,"abstract":"A gradient nano-grained (GNG) structure demonstrates satisfactory surface strength. However, the underlying mechanism responsible for its strengthening lacks sufficient research. To explain how gradient nano-grained structures improve surface strength in detail, large-scale parallel molecular dynamics simulations are utilized in this study to investigate the mechanical deformation behavior of BCC tungsten with varying grain sizes during spherical nanoindentation. The findings suggest that a well-designed gradient structure can promote rational plasticity and an appropriate distribution of internal atomic stress. The critical point of maximum stress and hardness is observed when the initial grain size is 4.5 nm, with an average grain size of 7.1 nm. The interaction between grain boundary slip and migration in small grains, along with the enhanced activity of grain boundary dislocations in large grains, collectively contributes to the enhancement of the strength and hardness of the GNG structure. Compared with a homogeneous nano-grained structure, the gradient nano-grained structure exhibits a more rational distribution of dislocations and stress relaxation effects to enhance strength. The present work utilizes the molecular dynamics nanoindentation method to study GNG materials, providing a methodology for investigating the surface strengthening effects of GNG structures at the atomic scale and effectively revealing potential mechanisms for resisting surface deformation in GNG structures.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140974789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Competitive nature of weak anti-localization and weak localization effect in Cr-doped sputtered topological insulator Bi2Se3 thin film 掺杂铬的拓扑绝缘体 Bi2Se3 薄膜中弱反局域和弱局域效应的竞争性质

Journal of Applied Physics Pub Date : 2024-05-15 DOI: 10.1063/5.0206345

S. Gautam, V. K. Maurya, V. Aggarwal, Rahul Kumar, Bheem Singh, V. P. S. Awana, B. S. Yadav, S. Ojha, R. Ganesan, S. S. Kushvaha

{"title":"Competitive nature of weak anti-localization and weak localization effect in Cr-doped sputtered topological insulator Bi2Se3 thin film","authors":"S. Gautam, V. K. Maurya, V. Aggarwal, Rahul Kumar, Bheem Singh, V. P. S. Awana, B. S. Yadav, S. Ojha, R. Ganesan, S. S. Kushvaha","doi":"10.1063/5.0206345","DOIUrl":"https://doi.org/10.1063/5.0206345","url":null,"abstract":"In the present study, we have investigated the effect of magnetic Cr doping on the transport properties of a sputtered Bi2Se3 thin film on the SrTiO3 (110) substrate. The high-resolution x-ray diffraction and Raman spectroscopy measurements revealed the growth of rhombohedral Bi2Se3 thin films. Further electronic and compositional analysis was done by x-ray photoemission spectroscopy and Rutherford backscattering spectroscopy, and the x-value was estimated to be 0.18 in the Bi2−xCrxSe3 thin film. The variation in the resistivity with temperature (2–300 K) revealed the metallic nature in undoped Bi2Se3 up to 30 K and upturn resistivity below 30 K. The Cr-doped Bi2Se3 resistivity data show a traditional semiconducting nature up to 25 K and take an abrupt upturn resistivity below 25 K. The resistivity behavior of both samples was explained by adopting a model that consists of the total resistance, a combination of bulk and surface resistance in parallel. The bulk bandgap value determined by this method is obtained to be 256 meV in an undoped Bi2Se3 thin film. Magnetoconductance data of the undoped thin film revealed a weak anti-localization (WAL) effect, while the Cr-doped thin film showed a weak localization (WL) effect at low temperatures (<50 K). At low magnetic field and low temperature, a competing nature of WAL and WL effects was prominent in the Cr-doped film. A drastic increase in the electrical resistance suggests that Cr doping can significantly modify the electrical properties of Bi2Se3 thin films, which could have potential applications in futuristic devices.","PeriodicalId":502933,"journal":{"name":"Journal of Applied Physics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2024-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140972017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Control of the unscreened modes in AlGaN/GaN terahertz plasmonic crystals 控制 AlGaN/GaN 太赫兹等离子晶体中的非屏蔽模式

Journal of Applied Physics Pub Date : 2024-05-15 DOI: 10.1063/5.0190483

M. Dub, P. Sai, Y. Ivonyak, D. B. But, J. Kacperski, P. Prystawko, R. Kucharski, M. Słowikowski, G. Cywiński, W. Knap, S. Rumyantsev

引用次数: 0